BAS85 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage e2 • The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • This diode is also available in a DO35 case with type designation BAT85 • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 94 9371 Applications Mechanical Data • Applications where a very low forward voltage is required Case: MiniMELF Glass case SOD80 Weight: approx. 31 mg Cathode Band Color: black Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box Parts Table Part BAS85 Ordering code BAS85-GS18 or BAS85-GS08 Type Marking Remarks - Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Continuous reverse voltage Symbol Value Unit VR 30 V 2001) mA 1) mA Forward continuous current Tamb = 25 °C IF Peak forward current Tamb = 25 °C IFM 300 Surge forward current tp < 1 s, Tamb = 25 °C IFSM 6001) mA Power dissipation Tamb = 65 °C Ptot 2001) mW Symbol Value Unit 1) K/W 1) Valid provided that electrodes are kept at ambient temperature. Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Thermal resistance junction to ambient air Junction temperature Storage temperature range 1) RthJA 430 Tj 125 °C Tstg - 55 to +150 °C Valid provided that electrodes are kept at ambient temperature. Document Number 85510 Rev. 1.8, 27-Mar-06 www.vishay.com 1 BAS85 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min V(BR)R 30 Typ. Max Unit 0.2 2 µA VF 240 mV Pulse test tp < 300 µs, IF = 1 mA VF 320 mV Pulse test tp < 300 µs, IF = 10 mA VF 400 mV Pulse test tp < 300 µs, IF = 30 mA VF Pulse test tp < 300 µs, IF = 100 mA VF 800 mV Diode capacitance VR = 1 V, f = 1 MHz Ctot 10 pF Reverse recovery time IF = 10 mA, IR = 10 mA, Irr = 1 mA, trr 5 ns Reverse breakdown voltage IR = 10 µA (pulsed) Leakage current VR = 25 V IR Forward voltage Pulse test tp < 300 µs, IF = 0.1 mA V 500 mV Typical Characteristics 1000 200 VR = 30 V 180 IR - Reverse Current (µA) PR - Reverse Power Dissipation (mW) Tamb = 25 °C, unless otherwise specified 160 140 RthJA = 540 kW 120 PR - Limit at 100 % VR 100 80 PR - Limit at 80 % VR 60 40 100 10 20 1 0 25 15822 50 75 100 125 www.vishay.com 25 150 Tj - Junction Temperature (°C) Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature 2 VR = VRRM 15823 50 75 100 125 150 Tj - Junction Temperature (°C) Figure 2. Reverse Current vs. Junction Temperature Document Number 85510 Rev. 1.8, 27-Mar-06 BAS85 Vishay Semiconductors 10 1000 CD - Diode Capacitance (pF) IF - Forward Current (A) Tj = 150 °C 100 Tj = 25 °C 10 1 f = 1 MHz 9 8 7 6 5 4 3 2 1 0 0.1 0 15824 0.5 1.0 0.1 1.5 VF - Forward Voltage (V) Figure 3. Forward Current vs. Forward Voltage 1 10 100 VR - Reverse Voltage (V) 15825 Figure 4. Diode Capacitance vs. Reverse Voltage Package Dimensions in mm (Inches) 1.6 (0.063) 1.4 (0.055) Cathode indification 0.47 max. (0.019) 3.7 (0.146) 3.3 (0.130) 2.5 (0.098) max 1.25 (0.049) min 2.0 (0.079) min foot print recommendation: 5.0 (0.197) ref Document no.: 6.560-5005.01-4 Rev. 7 - Date: 07.February.2005 96 12070 Document Number 85510 Rev. 1.8, 27-Mar-06 www.vishay.com 3 BAS85 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 4 Document Number 85510 Rev. 1.8, 27-Mar-06 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1