isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2570A DESCRIPTION ·Low Noise and High Gain NF = 1.5 dB TYP. Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5 mA ·Wide Dynamic Range NF = 1.9 dB TYP. Ga = 9 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 15 mA APPLICATIONS ·Designed for use in low-noise amplifier of VHF ~ UHF stages. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous 70 mA PC Collector Power Dissipation @TC=25℃ 0.6 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2570A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 15V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 2V; IC= 0 0.1 μA hFE DC Current Gain IC= 20mA ; VCE= 10V Current-Gain—Bandwidth Product IC= 20mA ; VCE= 10V COB Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz ︱S21e︱2 Insertion Power Gain IC= 20mA ; VCE= 10V; f= 1.0GHz Maximum Available Gain Noise Figure fT MAG NF isc Website：www.iscsemi.cn 40 200 5 0.7 0.9 pF 10 dB IC= 20mA ; VCE= 10V;f= 1.0GHz 11.5 dB IC= 5mA ; VCE= 10V;f= 1.0GHz 1.5 2 8 GHz 3.0 dB INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC2570A isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn 2SC2570A 4 INCHANGE Semiconductor isc Silicon NPN RF Transistor S-PARAMETER VCE = 10 V, IC = 5 mA, ZO = 50Ω S-PARAMETER VCE = 10 V, IC = 20 mA, ZO = 50Ω isc Website：www.iscsemi.cn isc RF Product Specification 2SC2570A