isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4262 DESCRIPTION ·Low Noise ·High Gain APPLICATIONS ·Designed for use in UHF~ VHF local oscillator. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation @TC=25℃ 0.1 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4262 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 20 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ 15 V ICBO Collector Cutoff Current VCB= 15V; IE= 0 0.5 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 1.0 μA Collector-Emitter Saturation Voltage IC= 20mA ; IB= 4mA 0.5 V DC Current Gain IC= 5mA ; VCE= 10V 50 Current-Gain—Bandwidth Product IC= 5mA ; VCE= 10V 1.4 Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz VCE(sat) hFE fT COB isc Website：www.iscsemi.cn 2 200 2.9 GHz 1.0 pF INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC4262