isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4245 DESCRIPTION ·High Current-Gain Bandwidth Product fT= 2400MHz TYP. @VCE = 10 V, IC = 2 mA ·Low Noise APPLICATIONS ·TV tuner , UHF mixer applications ·VHF~UHF band RF amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA IB Base Current-Continuous 25 mA PC Collector Power Dissipation @TC=25℃ 0.1 W TJ Junction Temperature 125 ℃ -55~125 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4245 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 30V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 2V; IC= 0 1.0 μA Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 15 DC Current Gain IC= 5mA ; VCE= 10V 40 Current-Gain—Bandwidth Product IC= 2mA ; VCE= 10V 1500 Cre Feed-Back Capacitance IE= 0 ; VCB= 10V; f= 1MHz Gce Conversion Gain V(BR)CEO hFE fT V 200 2400 0.6 12 MHz 0.9 17 pF dB IC= 2mA ; VCC= 10V; f= 800MHz fL= 830MHz(+2dBm) NF Noise Figure isc Website：www.iscsemi.cn 8 2 13 dB INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC4245 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn 2SC4245 4