Inchange Semiconductor Product Specification 2SC1683 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·Complement to type 2SA843 ·High breakdown voltage ·Large collector power dissipation APPLICATIONS ·Audio frequency power amplifier ·Color TV vertical deflection output PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V 500 mA 2 A 20 W IC Collector current ICM Collector current-peak PT Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1683 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; IB=0 150 V V(BR)CBO Collector-base breakdown voltage IC=0.5mA ; IE=0 200 V V(BR)EBO Emitter-base breakdown voltage IE=0.5mA ; IC=0 5 V Collector-emitter saturation voltage IC=500mA; IB=50mA 1.0 V VBE Base-emitter on voltage IC=400m A ; VCE=10V 1.0 V ICBO Collector cut-off current VCB=200V ;IE=0 50 μA IEBO Emitter cut-off current VEB=4V; IC=0 50 μA hFE DC current gain IC=400m A ; VCE=10V VCEsat CONDITIONS hFE Classifications P Q 60-140 85-200 2 MIN 60 TYP. MAX 200 UNIT Inchange Semiconductor Product Specification 2SC1683 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3