TRIQUINT AGR21090E

AGR21090E
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
Table 1. Thermal Characteristics
The AGR21090E is a high-voltage, gold-metalized,
laterally diffused, metal oxide semiconductor
(LDMOS) RF power transistor suitable for wideband
code-division multiple access (W-CDMA), and single
and multicarrier class AB wireless base station power
amplifier applications.
Parameter
Thermal Resistance,
Junction to Case:
AGR21090EU
AGR21090EF
Sym
Value
Unit
Rı JC
Rı JC
0.7
0.7
°C/W
°C/W
Table 2. Absolute Maximum Ratings*
AGR21090EU (unflanged)
AGR21090EF (flanged)
Figure 1. Available Packages
Features
Typical performance for 2 carrier 3GPP
W-CDMA systems. F1 = 2135 MHz and
F2 = 2145 MHz with 3.84 MHz channel BW, adjacent channel BW = 3.84 MHz at F1 – 5 MHz and
F2 + 5 MHz. Third-order distortion is measured
over 3.84 MHz BW at F1 – 10 MHz and
F2 + 10 MHz. Typical P/A ratio of 8.5 dB at 0.01%
(probability) CCDF:
— Output power: 19 W.
— Power gain: 14.5 dB.
— Efficiency: 26%.
— IM3: –33 dBc.
— ACPR: –36 dBc.
— Return loss: –12 dB.
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 2140 MHz, 90 W continuous wave (CW) output power.
Large signal impedance parameters available.
Parameter
Drain-source Voltage
Gate-source Voltage
Total Dissipation at TC = 25 °C:
AGR21090EU
AGR21090EF
Derate Above 25 ˇC:
AGR21090EU
AGR21090EF
CW RF Input Power
(VDS = 31 V)
Operating Junction Temperature
Storage Temperature Range
Sym Value Unit
65
Vdc
VDSS
VGS –0.5, 15 Vdc
PD
PD
250
250
W
W
—
—
—
1.4
1.4
30
W/°C
W/°C
W
TJ
200
°C
TSTG –65, 150
°C
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR21090E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. PEAK
Agere Devices
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be
observed.
AGR21090E
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Parameter
Symbol
Min
Typ
Max
V(BR)DSS
65
—
—
IDSS
—
Unit
Off Characteristics
100 µA)
Drain-source Breakdown Voltage (VGS = 0, ID = 300
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
IGSS
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V)
—
Vdc
—
—
3
150
9
µAdc
—
6.4
—
S
3.0
3.7
µAdc
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 1 A)
GFS
Gate Threshold Voltage (VDS = 10 V, ID = 300 µA)
VGS(TH)
2.8
Drain-source On-voltage (VGS = 10 V, ID = 1 A)
VDS(ON)
—
Gate Quiescent Voltage (VDS = 28 V, ID = 800 mA)
VGS(Q)
3.4
4.8
Vdc
0.11
—
Vdc
4.6
Vdc
Table 5. RF Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
—
2.1
—
pF
14.0
14.5
—
dB
—
–33
–32
dBc
ACPR
—
–36
–35
dBc
IRL
—
–12
–9
dB
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
(This part is internally matched on both the input and output.)
CRSS
Test Fixture)
Functional Tests (in Supplied
Agere Systems
Supplied Test Fixture)
Common-source Amplifier Power Gain*
Drain Efficiency*
Third-order Intermodulation Distortion*
(IM3 distortion measured over 3.84 MHz BW @ f1 – 10 MHz
and f2 + 10 MHz)
Adjacent Channel Power Ratio*
(ACPR measured over BW of 3.84 MHz @ f1 – 5 MHz
and f2 + 5 MHz)
Input Return Loss*
Power Output, 1 dB Compression Point
(VDD = 28 V, fC = 2140.0 MHz)
Output Mismatch Stress
(VDD = 28 V, POUT = 90 W (CW), IDQ = 800 mA, fC = 2140.0 MHz
VSWR = 10:1; [all phase angles])
GPS
η
IM3
P1dB
ψ
* 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2135 MHz, and f2 = 2145 MHz.
VDD = 28 Vdc, IDQ = 800 mA, and POUT = 19 W average.
Nominal operating voltage 28 Vdc. Qualified for a maximum operating voltage of 32 Vdc ±0.5 V.
24
85
26
93
—
—
%
W
No degradation in output power.
AGR21090E
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR21090E
FB1
VGG
R3
R2
R4
Z1
RF INPUT
VDD
+
C4
C1
C5
Z2
C19
+
+
C3
Z3
C2
Z4
Z5
Z7
Z6
Z9
2
1
3
Z10
C7
Z11
C8
C9
Z12
C10
C11
Z13 C6
Z14
C18
Z8
DUT
+
C13 C14
C15
C16
RF
OUTPUT
PINS:
1. DRAIN
2. GATE
3. SOURCE
C17
A. Schematic
Parts List:
� Microstrip line: Z1 0.889 in. x 0.065 in.; Z2 0.370 in. x 0.065 in.; Z3 0.160 in. x 0.250 in.; Z4 0.080 in. x 0.400 in.; Z5 0.195 in. x 1.000 in.;
Z6 0.050 in. x 0.860 in.; Z7 0.050 in. x 0.880 in.; Z8 0.050 in. x 0.880 in.; Z9 0.180 in. x 1.060 in.; Z10 0.110 in. x 1.060 in.;
Z11 0.260 in. x 1.060 in. x 0.065 in. taper; Z12 0.195 x 0.065 in.; Z13 0.395 in. x 0.065 in.; Z14 0.555 in. x 0.065 in.
®
� ATC chip capacitor: C1, C6: 8.2 pF 100B8R2JW500X; C2, C7, C13: 6.8 pF 100B6R8JW500X.
®
� Sprague tantalum surface-mount chip capacitor: C3, C5, C11, C17: 22 µF, 35 V.
®
� Kemet 1206 size chip capacitor: C10, C16: 0.1 µF C1206104K5RAC7800.
®
� Murata 0805 size chip capacitor: C9, C15: 0.01 µF GRM40X7R103K100AL.
®
� Johanson Giga-Trim variable capacitor: C18, C19: 0.4 pF to 2.5 pF 27281SL.
� 1206 size chip capacitor: C4, C8, C14: 22000 pF.
� 1206 size chip resistor: R2 4.7 Ω, R3 1.02 kΩ, R4 560 kΩ.
®
� Fair-Rite ferrite bead: FB1 2743019447.
®
� Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5.
B. Component Layout
Figure 2. AGR21090E Test Circuit
AGR21090E
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
U CT
8
0.6
90
IN D
0.
10
0.1
0.4
20
50
20
10
5.0
4.0
3.0
2.0
1.8
1.6
1.4
1.2
50
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.2
0.2
20
0.4
0.1
)
/ Yo
(-jB
CE
IV
CT
DU
IN
R
0
2.
1.8
1.6
1.4
0.11
-100
-90
0.13
0.1
-70
0.
07
30
40
-1
43
0.
8
0.0
2
0.4
.41
0
0.4
0.39
0.38
F
0.37
0.12
9
0.0
-1
1.
0
1.0
0
5
0.14
-80
0.36
-110
0
-12
(-j
06
Z
X/
0.9
1.2
0.15
0.35
-75
,O
o)
0.7
0
-4
-4
4
-70
-5
6
0.8
5
-3
0.1
0.3
5
3
-60
-5
0.3
7
-60
0.1
VE
0.6
32
CA P
AC
I TI
T
-85
AN
PT
CE
US
ES
0.2
-30
CE
CO
M
0
-65 .5
18
0.
RE
AC
TA
N
EN
0.
0
-5
-25
0.
PO
N
4
0.4
31
0.
19
0.
4
0.
0.6
0
-20
5
0.8
3.
0.3
0.0
4.0
0.2
5
0.4
0
1.
-15
f1
ZS
0
0
0.2
8
f3
f1
-4
.4
ZL
0.2
2
0.3
f3
0.2
9
0.2
1
-30
6
0.4
4
0.0
0
-15 -80
8
0.
5.0
0.2
-10
0.48
10
0.6
-20
D L OA D <
OW A R
7
HST
0.4
N GT
-170
EL E
V
WA
<Ð
-90
-160
Ð
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
50
0.49
0.25
0.2
6
0.24
0.27
0.23
0.25
0.24
0.26
0.23
0.27
REFL ECTI ON COEFFI CI EN T I N D EG
REES
L E OF
ANG
I SSI ON COEFFI CI EN T I N
TRA N SM
D EGR
EES
L E OF
ANG
Z0 = 5 Ω
0.0 Ð > W A V EL E
N GTH
S TOW
A RD
0.0
0.49
0.48
± 180
170
Typical Performance Characteristics
MHz (f)
2110 (f1)
2140 (f2)
2170 (f3)
ZL Ω
ZS Ω
(Complex Source Impedance) (Complex Optimum Load Impedance)
2.52 – j4.60
3.10 – j3.11
2.46 – j4.42
3.01 – j3.05
2.37 – j4.25
2.94 – j2.99
GATE (2)
ZS
DRAIN (1)
ZL
SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
AGR21090E
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
16.50
IDQ = 1100 mA
16.00
IDQ = 950 mA
15.50
GPS (dB) S
15.00
14.50
14.00
13.50
13.00
12.50
12.00
IDQ = 500 mA
IDQ = 650 mA
11.50
1.00
IDQ = 800 mA
10.00
100.00
POUT (W) PEPZ
Test Conditions:
VDD 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz.
Two-tone measurement, 10 MHz tone spacing.
Figure 4. Two-Tone Power Gain vs. Output Power and IDQ
-20.00
IDQ = 500 mA
-25.00
-30.00
IDQ = 650 mA
IMD3 (dBc)Z
-35.00
-40.00
-45.00
-50.00
-55.00
-60.00
-65.00
IDQ = 1100 mA
IDQ = 800 mA
IDQ = 950 mA
-70.00
1.00
10.00
100.00
POUT (W) PEPZ
Test Conditions:
VDD 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz.
Two-tone measurement, 10 MHz tone spacing.
Figure 5. IMD3 vs. Output Power and IDQ
1000.00
AGR21090E
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
0.0
-5.0
-10.0
IMD (dBc)Z
-15.0
-20.0
IM3
-25.0
-30.0
IM5
-35.0
-40.0
IM7
-45.0
-50.0
-55.0
0.1
1
10
100
TWO-TONE SPACING (MHz)Z
Test Conditions:
VDD 28 Vdc, f0 = 2140 MHz, POUT = 90 W PEP.
Two-tone measurement, 10 MHz tone spacing.
20.00
50.0
18.00
40.0
16.00
GAIN (dB)Z
14.00
12.00
30.0
GAIN
20.0
Ƨ
10.0
10.00
0.0
8.00
-10.0
6.00
-20.0
4.00
2.00
0.00
5.00
IM3
ACPR
10.00
15.00
20.00
25.00
30.00
POUT (W-AVERAGE)Z
Test Conditions:
VDD 28 Vdc, IDQ = 800 mA.
2 carrier W-CDMA 3GPP peak-to-average = 8.5 dB @ 0.01% CCDF, 10 MHz spacing, 3.84 MHz CBW.
Figure 7. Gain, Efficiency, IM3, and ACPR vs. Output Power
-30.0
-40.0
-50.0
35.00
Ƨ (%), IM3 (dBc), ACPR (dBc)Z
Figure 6. IMD vs. Tone Spacing
AGR21090E
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
20.00
50.0
14.00
30.0
20.0
GAIN
12.00
10.0
10.00
0.0
8.00
-10.0
IRL
6.00
-20.0
IM3
4.00
2.00
ACPR
0.00
2100
2110
2120
2130
2140
2150
2160
2170
-30.0
-40.0
-50.0
2180
FREQUENCY (MHz)Z
Test Conditions:
VDD 28 Vdc, POUT = 19 W, IDQ = 800 mA.
2 carrier W-CDMA 3GPP peak-to-average = 8.5 dB @ 0.01% CCDF, 10 MHz spacing, 3.84 MHz CBW.
Figure 8. Broadband Performance
+5
F1
F2
-0
-5
-10
-15
-20
-25
-30
IM3
IM3
-35
-40
ACPR
ACPR
-45
CENTER 2.140 GHz
SPAN 50 MHz
Test Conditions:
VDD 28 Vdc, POUT = 19 W, IDQ = 800 mA.
2 carrier W-CDMA 3GPP peak-to-average = 8.5 dB @ 0.01% CCDF, 10 MHz spacing, 3.84 MHz CBW.
Figure 9. Spectral Plot
IM3 (dBc), ACPR (dBc)Z
16.00
GAIN (dB)Z
40.0
Ƨ
Ƨ (%), IRL (dB),
18.00
AGR21090E
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
8.00
15.00
AM TO AM
(power gain [dB])
PGS (dB)Z
14.00
13.00
0.00
-4.00
AM TO PM
(PHASE [degrees])
12.00
4.00
-8.00
11.00
-12.00
10.00
-16.00
9.00
15.0
20.0
25.0
30.0
35.0
PIN (dBm)Z
Test Conditions:
VDD 28 Vdc, f0 = 2140 MHz, IDQ = 800 mA.
CW input.
Figure 10. AM-AM and AM-PM Characteristics
40.0
-20.00
45.0
PHASE (degrees)Z
16.00
AGR21090E
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified.
AGR21090EU
PINS:
1. DRAIN
2. GATE
3. SOURCE
1
1
PEAK DEVICES
AGR21090XU
M-AGR21090U
YYWWLL
YYWWLL
XXXXX
ZZZZZZZ
ZZZZZZZ
3
3
2
2
AGR21090EF
PINS:
1. DRAIN
2. GATE
3. SOURCE
1
PEAK DEVICES
AGR21090XF
M-AGR21090F
YYWWLL
XXXXX
YYWWLL
ZZZZZZZ
ZZZZZZZ
1
3
3
2
2
Label Notes:
� M before the part number denotes model program. X before the part number denotes engineering prototype.
�
�
�
�
The last two letters of the part number denote wafer technology and package type.
YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; BK = Bangkok,
Thailand). XXXXX = five-digit wafer lot number.
ZZZZZZZ = seven-digit assembly lot number on production parts.
ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.