APTCV90TL12T3G Three level inverter CoolMOS & Trench + Field Stop IGBT4 Power Module Trench & Field Stop IGBT4 Q2, Q3: VCES = 1200V ; IC = 50A @ Tc = 80°C CoolMOS™ Q1, Q4: VDSS = 900V ; ID = 23A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies Features • Q2, Q3 Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses • • • • • 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 3 4 7 8 Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant 13 2 Q1, Q4 CoolMOS™ Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged 10 11 12 All ratings @ Tj = 25°C unless otherwise specified These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-9 APTCV90TL12T3G – Rev 0 March, 2009 All multiple inputs and outputs must be shorted together Example: 10/11/12 ; 7/8 … APTCV90TL12T3G Q1 & Q4 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Max ratings 900 30 23 75 ±20 120 250 8.8 2.9 1940 Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Unit V A V mΩ W A mJ Q1 & Q4 Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 900V VGS = 0V,VDS = 900V Min Typ 2.5 500 100 3 Tj = 25°C Tj = 125°C VGS = 10V, ID = 26A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V Max 100 Unit 120 3.5 100 mΩ V nA Max Unit µA Q1 & Q4 Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Tf RthJC Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V ; VDS = 100V f = 1MHz Min Typ 6800 330 pF 270 VGS = 10V VBus = 400V ID = 26A nC 32 115 Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 26A RG = 7.5Ω 70 20 ns 400 25 0.5 Junction to Case Thermal resistance °C/W Q2 & Q3 Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C Max ratings 1200 80 60 100 ±20 280 Tj = 150°C 100A @ 1100V TC = 25°C TC = 80°C TC = 25°C Reverse Bias Safe Operating Area www.microsemi.com Unit V March, 2009 Parameter Collector - Emitter Breakdown Voltage A V W 2-9 APTCV90TL12T3G – Rev 0 Symbol VCES APTCV90TL12T3G Q2 & Q3 Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 50A Tj = 150°C VGE = VCE , IC = 1.6mA VGE = 20V, VCE = 0V Min Typ 5.0 1.8 2.2 5.8 Min Typ Max Unit 1 2.2 mA 6.5 400 V nA Max Unit V Q2 & Q3 Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Turn-on Delay Time Tr Rise Time Turn-off Delay Time Fall Time Td(off) Tf Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data RthJC VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=600V IC=50A Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 50A RG = 8.2Ω Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 50A RG = 8.2Ω TJ = 25°C VGE = ±15V VCE = 600V TJ = 150°C IC = 50A TJ = 25°C RG = 8.2Ω TJ = 150°C VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C Junction to Case Thermal Resistance 2770 205 160 pF 0.38 µC 50 27 270 ns 70 50 30 290 80 3.8 5.5 2.5 4.5 ns mJ mJ 200 A 0.53 °C/W March, 2009 Td(on) Tr Td(off) Test Conditions www.microsemi.com 3-9 APTCV90TL12T3G – Rev 0 Symbol Characteristic APTCV90TL12T3G CR5 & CR6 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage Test Conditions VR=1000V IF = 40A IF = 80A IF = 40A trr Reverse Recovery Time Qrr Reverse Recovery Charge di/dt =200A/µs Err Reverse Recovery Energy IF = 40A VR = 667V IF = 40A VR = 667V Min 1000 Tj = 25°C Tj = 125°C Tc = 80°C Typ Max 100 500 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 40 2.5 3.1 2 250 315 415 Tj = 125°C 1650 Tj = 125°C 1.3 Unit V µA A 3 V ns nC mJ di/dt =1000A/µs RthJC Junction to Case Thermal Resistance 1.2 °C/W Max Unit V CR2, CR3, CR7 & CR8 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current Test Conditions VR=1200V DC Forward Current IF = 30A IF = 60A IF = 30A Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge di/dt =200A/µs Err Reverse Recovery Energy IF = 30A VR = 800V IF = 30A VR = 800V Min 1200 Tj = 25°C Tj = 125°C Tc = 80°C Typ 100 500 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 40 2.6 3.2 1.8 300 380 360 Tj = 125°C 1700 Tj = 125°C 1.6 µA A 3.1 V ns nC mJ di/dt =1000A/µs RthJC Junction to Case Thermal Resistance 1.2 °C/W Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % March, 2009 Characteristic Resistance @ 25°C T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦ ⎣ www.microsemi.com 4-9 APTCV90TL12T3G – Rev 0 Symbol R25 ∆R25/R25 B25/85 ∆B/B APTCV90TL12T3G Thermal and package characteristics Symbol VISOL TJ TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Min 2500 -40 -40 -40 2.5 Typ Max 175* 125 100 4.7 110 Unit V °C N.m g * Tjmax = 150°C for Q1 & Q4 SP3 Package outline (dimensions in mm) 28 17 1 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com Q2 & Q3 Typical performance curve 40 March, 2009 VCE=600V D=50% R G=8.2 Ω T J=150°C Tc=75°C 50 30 20 Hard switching 10 0 10 20 30 40 50 60 70 80 90 IC (A) www.microsemi.com 5-9 APTCV90TL12T3G – Rev 0 Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 60 APTCV90TL12T3G Output Characteristics (VGE=15V) 100 Output Characteristics 100 TJ = 150°C 80 TJ=25°C 60 VGE=19V 60 TJ=150°C IC (A) IC (A) 80 40 20 VGE=15V 40 VGE=9V 20 0 0 0 1 2 VCE (V) 3 4 0 Transfert Characteristics 100 VCE = 600V VGE = 15V RG = 8.2 Ω TJ = 150°C 60 12 E (mJ) IC (A) TJ=25°C 16 40 3 4 Eon 8 Eoff TJ=150°C 4 0 0 5 6 7 8 9 10 11 12 0 13 20 40 60 80 100 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 12 120 100 10 8 6 VCE = 600V VGE =15V IC = 50A TJ = 150°C 80 IC (A) Eon E (mJ) 2 VCE (V) Energy losses vs Collector Current 20 80 20 1 Eoff 60 40 4 VGE=15V TJ=150°C RG=8.2 Ω 20 0 2 0 10 20 30 Gate Resistance (ohms) 0 40 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 March, 2009 0.5 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 6-9 APTCV90TL12T3G – Rev 0 Thermal Impedance (°C/W) 0.6 APTCV90TL12T3G Q1 & Q4 Typical performance curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 6V 80 5V 40 0 0 5 10 15 VDS, Drain to Source Voltage (V) 20 Maximum Safe Operating Area 925 900 25 limited by RDSon 75 100 125 10 10 ms Single pulse TJ=150°C TC=25°C 25 20 15 10 5 0.1 0 1 10 100 1000 25 VDS, Drain to Source Voltage (V) 1000 Coss 100 10 Crss 1 0 150 10 VDS=720V ID=26A TJ=25°C 8 6 March, 2009 Ciss 10000 50 75 100 125 TC, Case Temperature (°C) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) 50 30 ID, DC Drain Current (A) ID, Drain Current (A) 950 DC Drain Current vs Case Temperature 35 100 µs 1 975 TJ, Junction Temperature (°C) 1000 100 1000 4 2 0 25 50 75 100 125 150 175 200 VDS, Drain to Source Voltage (V) www.microsemi.com 0 50 100 150 200 Gate Charge (nC) 250 300 7-9 APTCV90TL12T3G – Rev 0 ID, Drain Current (A) VGS=20, 8V BVDSS, Drain to Source Breakdown Voltage Breakdown Voltage vs Temperature 120 APTCV90TL12T3G CR5 & CR6 Typical performance curve Forward Current vs Forward Voltage IF, Forward Current (A) 80 TJ=125°C 60 40 20 TJ=25°C 0 0.0 1.0 2.0 3.0 4.0 VF, Anode to Cathode Voltage (V) Switching Energy Losses vs Gate Resistance Energy losses vs Collector Current 1.4 2 1.2 1.2 E (mJ) E (mJ) 1.6 VCE = 667V VGE = 15V RG = 5Ω TJ = 125°C 0.8 0.4 20 40 60 VCE = 667V VGE =15V IC = 40A TJ = 125°C 0.8 0 0 1 0.6 80 0 10 IC (A) 20 30 Gate resistance (ohms) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 1 0.8 0.9 0.7 0.5 0.6 0.2 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 March, 2009 0.4 Rectangular Pulse Duration (Seconds) www.microsemi.com 8-9 APTCV90TL12T3G – Rev 0 Thermal Impedance (°C/W) 1.4 APTCV90TL12T3G CR2, CR3, CR7 & CR8 Typical performance curve Forward Current vs Forward Voltage IF, Forward Current (A) 80 TJ=125°C 60 40 20 TJ=25°C 0 0.0 1.0 2.0 3.0 4.0 VF, Anode to Cathode Voltage (V) Switching Energy Losses vs Gate Resistance 2.5 1.8 2 1.6 1.4 1.5 E (mJ) E (mJ) Energy losses vs Collector Current VCE = 800V VGE = 15V RG = 5Ω TJ = 125°C 1 0.5 20 40 60 VCE = 800V VGE =15V IC = 30A TJ = 125°C 1 0.8 0 0 1.2 0.6 80 0 10 IC (A) 20 30 Gate resistance (ohms) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 1 0.8 0.9 0.7 0.5 0.6 0.2 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 March, 2009 0.4 Rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 9-9 APTCV90TL12T3G – Rev 0 Thermal Impedance (°C/W) 1.4