APTC90AM60SCTG . Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VDSS = 900V RDSon = 60mΩ max @ Tj = 25°C ID = 59A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • VBUS Q1 - OUT S1 • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF NTC1 • • OUT • • Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration G2 0/VBU S S2 VBUS 0/VBUS OUT S1 S2 NTC2 G1 G2 NTC1 Benefits • • • • • • Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 900 59 44 150 ±20 60 462 8.8 2.9 1940 Unit V A August, 2009 Q2 V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTC90AM60SCTG – Rev 0 G1 Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated APTC90AM60SCTG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 900V VGS = 0V,VDS = 900V Min Typ 2.5 1000 50 3 Tj = 25°C Tj = 125°C VGS = 10V, ID = 52A VGS = VDS, ID = 6mA VGS = ±20 V, VDS = 0V Max 200 Unit 60 3.5 200 mΩ V nA Max Unit µA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 100V f = 1MHz Min Typ 13.6 0.66 nF 540 VGS = 10V VBus = 400V ID = 52A nC 64 230 70 Inductive Switching (125°C) VGS = 10V VBus = 600V ID = 52A RG = 3.8Ω 20 ns 400 25 1.8 Inductive switching @ 25°C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8Ω Inductive switching @ 125°C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8Ω mJ 1.5 2.52 mJ 1.7 Series diode ratings and characteristics IF VF Maximum Reverse Leakage Current VR=200V DC Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 60A IF = 120A IF = 60A IF = 60A VR = 133V di/dt = 400A/µs www.microsemi.com Min 200 Tj = 25°C Tj = 125°C Tc = 85°C Typ Max 350 600 Tj = 125°C 60 1.1 1.4 0.9 Tj = 25°C 24 Tj = 125°C 48 Tj = 25°C 66 Tj = 125°C 300 Unit V µA A 1.15 V ns August, 2009 IRM Test Conditions nC 2–6 APTC90AM60SCTG – Rev 0 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTC90AM60SCTG SiC parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current Test Conditions Min 1200 Tj = 25°C Tj = 175°C Tc = 100°C Tj = 25°C Tj = 175°C VR=1200V Typ Max 64 112 20 1.6 2.3 400 2000 IF DC Forward Current VF Diode Forward Voltage IF = 20A QC Total Capacitive Charge IF = 20A, VR = 600V di/dt =1000A/µs 80 C Total Capacitance f = 1MHz, VR = 200V 192 f = 1MHz, VR = 400V 138 Unit V µA A 1.8 3 V nC pF Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance SiC Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ Transistor Series diode To Heatsink M5 4000 -40 -40 -40 2.5 Max 0.27 0.65 1 Unit °C/W V 150 125 100 4.7 160 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦ ⎣ August, 2009 RT = R25 Typ 50 5 3952 4 www.microsemi.com 3–6 APTC90AM60SCTG – Rev 0 Symbol R25 ∆R25/R25 B25/85 ∆B/B APTC90AM60SCTG SP4 Package outline (dimensions in mm) ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com Typical CoolMOS Performance Curve VDS=600V D=50% RG=3.8Ω TJ=125°C TC=75°C Hard switching 200 ZCS 100 0 20 25 30 35 40 45 50 2.5 2.0 1.5 1.0 0.5 25 3 Eon 2 100 125 150 6 Switching Energy (mJ) Eon and Eoff (mJ) VDS=600V RG=3.8Ω TJ=125°C L=100µH 75 Switching Energy vs Gate Resistance Switching Energy vs Current 4 50 TJ, Junction Temperature (°C) ID, Drain Current (A) Eoff 1 0 Eoff 5 4 August, 2009 300 3.0 Eon 3 VDS=600V ID=52A TJ=125°C L=100µH 2 1 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80 0 5 10 15 20 Gate Resistance (Ohms) www.microsemi.com 4–6 APTC90AM60SCTG – Rev 0 Frequency (kHz) ZVS ON resistance vs Temperature RDS(on), Drain to Source ON resistance (Normalized) Operating Frequency vs Drain Current 400 APTC90AM60SCTG Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.3 0.9 0.25 0.7 0.2 0.15 0.5 0.1 0.3 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 6V 160 5V 80 0 0 5 10 15 VDS, Drain to Source Voltage (V) 20 Maximum Safe Operating Area 10 ms ID, DC Drain Current (A) 925 900 25 75 100 125 50 40 30 20 10 1 0 1 10 100 1000 25 VDS, Drain to Source Voltage (V) Ciss 10000 Coss 1000 100 Crss 10 1 0 50 75 100 125 TC, Case Temperature (°C) 150 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) 50 25 50 75 100 125 150 175 200 VDS, Drain to Source Voltage (V) www.microsemi.com 10 VDS=400V ID=52A TJ=25°C 8 August, 2009 ID, Drain Current (A) 100 µs Single pulse TJ=150°C TC=25°C 950 DC Drain Current vs Case Temperature 60 limited by RDSon 10 975 TJ, Junction Temperature (°C) 1000 100 1000 6 4 2 0 0 100 200 300 400 Gate Charge (nC) 500 600 5–6 APTC90AM60SCTG – Rev 0 ID, Drain Current (A) VGS=20, 8V BVDSS, Drain to Source Breakdown Voltage Breakdown Voltage vs Temperature 240 APTC90AM60SCTG Typical parallel SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.2 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.1 0.2 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 40 200 30 TJ=75°C 20 TJ=125°C 10 TJ=175°C IR Reverse Current (µA) IF Forward Current (A) TJ=25°C 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) 150 100 TJ=75°C TJ=125°C 50 TJ=175°C 0 400 600 TJ=25°C 800 1000 1200 1400 1600 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage C, Capacitance (pF) 1400 1200 1000 800 600 400 200 10 100 VR Reverse Voltage 1000 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTC90AM60SCTG – Rev 0 1 August, 2009 0