BPW96B, BPW96C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation 94 8391 • Fast response times • Angle of half sensitivity: ϕ = ± 20° • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC DESCRIPTION BPW96 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-1¾ plastic package. It is sensitive to visible and near infrared radiation. with APPLICATIONS • Detector in electronic control and drive circuits PRODUCT SUMMARY COMPONENT Ica (mA) ϕ (deg) λ0.1 (nm) BPW96B 2.5 to 7.5 ± 20 450 to 1080 BPW96C 4.5 to 15 ± 20 450 to 1080 PACKAGE FORM Note Test condition see table “Basic Characteristics” ORDERING INFORMATION PACKAGING REMARKS BPW96B ORDERING CODE Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ BPW96C Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Collector emitter voltage TEST CONDITION VCEO 70 V Emitter collector voltage VECO 5 V mA Collector current Collector peak current Power dissipation UNIT IC 50 tp/T ≤ 0.5, tp ≤ 10 ms ICM 100 mA Tamb ≤ 47 °C PV 150 mW °C Junction temperature Tj 100 Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C t≤3s Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 350 K/W Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified Document Number: 81532 Rev. 1.7, 05-Sep-08 For technical questions, contact: [email protected] www.vishay.com 419 BPW96B, BPW96C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant PV - Power Dissipation (mW) 200 160 120 RthJA 80 40 0 0 94 8300 20 40 60 80 Tamb - Ambient Temperature (°C) 100 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. IC = 1 mA V(BR)CEO 70 Collector emitter dark current VCE = 20 V, E = 0 ICEO Collector emitter capacitance VCE = 5 V, f = 1 MHz, E = 0 CCEO 3 pF ϕ ± 20 deg λp 850 nm λ0.1 450 to 1080 nm Collector emitter breakdown voltage Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Collector emitter saturation voltage Ee = 1 mW/cm2, λ = 950 nm, IC = 0.1 mA VCEsat TYP. MAX. UNIT 1 200 nA V 0.3 V Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ω ton 2.0 Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω toff 2.3 µs Cut-off frequency VS = 5 V, IC = 5 mA, RL = 100 Ω fc 180 kHz µs Note Tamb = 25 °C, unless otherwise specified TYPE DEDICATED CHARACTERISTICS PARAMETER Collector light current www.vishay.com 420 TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V BPW96B Ica 2.5 4.5 7.5 mA BPW96C Ica 4.5 8 15 mA For technical questions, contact: [email protected] Document Number: 81532 Rev. 1.7, 05-Sep-08 BPW96B, BPW96C Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Ica - Collector Light Current (mA) 10 103 VCE = 20 V 102 101 10 20 40 60 80 2.0 Ica rel - Relative Collector Current 1.8 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 1.4 1.2 1.0 0.8 0.6 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) 94 8239 0.05 mW/cm² λ = 950 nm 1 100 10 V CE - Collector Emitter Voltage (V) Fig. 5 - Collector Light Current vs. Collector Emitter Voltage 10 8 f = 1 MHz 6 4 2 0 0.1 1 100 10 V CE - Collector Emitter Voltage (V) Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage 10 8 ton/toff - Turn-on/Turn-off Time (µs) Ica - Collector Light Current (mA) 0.1 mW/cm² 94 8301 Fig. 3 - Relative Collector Current vs. Ambient Temperature BPW96B BPW96C 1 0.1 V CE = 5 V λ = 950 nm 0.01 0.01 94 8296 0.2 mW/cm² 1 94 8297 Fig. 2 - Collector Dark Current vs. Ambient Temperature 1.6 0.5 mW/cm² 0.1 0.1 100 Tamb - Ambient Temperature (°C) 94 8304 Ee = 1 mW/cm² BPW96B C CEO - Collector Emitter Capacitance (pF) ICEO - Collector Dark Current (nA) 104 0.1 1 10 Ee - Irradiance (mW/cm2) Fig. 4 - Collector Light Current vs. Irradiance Document Number: 81532 Rev. 1.7, 05-Sep-08 VCE = 5 V RL = 100 Ω λ = 950 nm 6 4 toff 2 ton 0 94 8293 0 2 4 6 8 10 12 14 IC - Collector Current (mA) Fig. 7 - Turn-on/Turn-off Time vs. Collector Current For technical questions, contact: [email protected] www.vishay.com 421 BPW96B, BPW96C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant 10° 20° 0.8 0.6 0.4 0.2 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement 30° Srel - Relative Radiant Sensitivity S (λ)rel - Relative Spectral Sensitivity 0° 1.0 80° 0 400 600 800 1000 0.4 0.6 λ - Wavelength (nm) 94 8348 0.2 0 94 8299 Fig. 8 - Relative Spectral Sensitivity vs. Wavelength Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement 5.75 ± 0.15 PACKAGE DIMENSIONS in millimeters C E Chip position ± 0.15 (4.8) Ø5 ± 0.15 7.6 ± 0.3 8.6 re) he (sp 0.8 Area not plane + 0.2 - 0.1 0.5 1.5 ± 0.25 1 + 0.2 - 0.1 < 0.7 35.3 ± 0.5 12.3 ± 0.3 R 5 2.4 0.63 + 0.15 + 0.2 - 0.1 2.54 nom. technical drawings according to DIN specifications Drawing-No.: 6.544-5086.01-4 Issue:1; 01.07.96 96 12192 www.vishay.com 422 For technical questions, contact: [email protected] Document Number: 81532 Rev. 1.7, 05-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1