Amplifier, Power, 1.2W 5.7-8.5 GHz MAAPGM0068-DIE Rev B Preliminary Datasheet Features ♦ 1.5 Watt Saturated Output Power Level ♦ Variable Drain Voltage (6-10V) Operation ® ♦ MSAG Process Description The MAAPGM0068-DIE is a 3-stage 1.2W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™) Process, each device is 100% RF tested on wafer to ensure performance compliance. Primary Applications M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. ♦ Point-to-Point Radio ◊ 6, 7, and 8 GHz Bands ♦ SatCom ♦ Broadband Wireless Access Also Available in: SAMPLES Description Ceramic Sample Board (Die) Mechanical Sample (Die) Part Number MAAPGM0068 MAAP-000068-SMB004 MAAP-000068-MCH000 Electrical Characteristics: TB = 25°C1, Z0 = 50 Ω, VDD = 8V, IDQ = 320 mA2, Pin = 8 dBm, RG = 300 Ω 1. 2. Parameter Symbol Typical Units Bandwidth f 5.7-8.5 GHz Output Power POUT 31 dBm 1-dB Compression Point P1dB 31 dBm Small Signal Gain G 28 dB Power Added Efficiency PAE 38 % Input VSWR VSWR 1.4:1 Output VSWR VSWR 2.1:1 Output Third Order Intercept TOI 38 dBm Output Third Order Intermod, Pout = 24 dBm (DCL) IMD3 35 dBc Gate Current IGG 5 mA Drain Current IDD 470 mA TB = MMIC Base Temperature Adjust VGG between –2.6 and –1.2V to achieve specified Idq. Amplifier, Power, 1.2W 5.7-8.5 GHz MAAPGM0068-DIE Rev B Preliminary Datasheet Maximum Ratings3 Parameter Symbol Absolute Maximum Units Input Power PIN 13 dBm Drain Supply Voltage VDD +12.0 V Gate Supply Voltage VGG -3.0 V Quiescent Drain Current (No RF) IDQ 520 mA Quiescent DC Power Dissipated (No RF) PDISS 5.2 W Junction Temperature TJ 170 °C Storage Temperature TSTG -55 to +150 °C 3. Operation beyond these limits may result in permanent damage to the part. Recommended Operating Conditions4 Characteristic Symbol Min Typ Max Unit Drain Voltage VDD 4.0 8.0 10.0 V Gate Voltage VGG -2.6 -2.0 -1.2 V Input Power PIN 8.0 11.0 dBm Thermal Resistance ΘJC 28.0 MMIC Base Temperature TB °C/W Note 5 °C 4. Operation outside of these ranges may reduce product reliability. 5. MMIC Base Temperature = 170°C — ΘJC* VDD * IDQ Power Derating Curve, Quiescent (No RF) 6 Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2.7 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 8.0 V. 3. Adjust VGG to set IDQ, (approximately @ –2.0 V). 4. Set RF input. 5. Power down sequence in reverse. Turn VGG off last. Peak Power Dissipation (W) 5 4 3 2 1 0 0 20 40 60 80 100 120 MMIC Base Temperature (ºC) 140 160 180 Amplifier, Power, 1.2W 5.7-8.5 GHz MAAPGM0068-DIE Rev B Preliminary Datasheet 50 35 33 45 33 31 40 31 29 35 29 27 30 27 25 25 23 20 21 15 21 19 10 19 5 17 0 10.5 15 Pout PAE 17 15 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 P1dB (dBm) 35 PAE (%) 25 23 6V 8V 10V 4.5 5.0 5.5 6.0 6.5 Frequency (GHz) 7.5 8.0 8.5 9.0 9.5 10.0 10.5 Figure 2. 1dB Compression Point and Drain Voltage at 25% IDSS 35 33 33 31 31 29 29 27 27 Psat (dBm) 35 25 23 21 25 23 21 6V 8V 10V 19 17 -20ºC 25ºC 75ºC 19 17 15 15 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 4.5 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 Frequency (GHz) Figure 3. Saturated Output Power and Drain Voltage at 25% IDSS Figure 4. Saturated Output Power and Temperature at 8V and 25% IDSS 45 6 40 Gain Input VSWR Output VSWR 36 41 28 4 VSWR 24 20 3 16 12 2 8 4 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 1.0 Pout SSG PAE IDS 43 5 32 4.5 5.0 Frequency (GHz) 1 10.5 Output Power (dBm), SSG(dB), PAE (%) Psat (dBm) Figure 1. Output Power and Power Added Efficiency at VD = 8V, Pin = 8dBm, and 25% IDSS Gain (dB) 7.0 Frequency (GHz) 0.9 0.8 39 0.7 37 0.6 35 0.5 33 0.4 31 0.3 29 0.2 27 0.1 25 30 40 50 60 70 80 90 100 110 120 130 140 0.0 150 Frequency (GHz) Junction Temperature (ºC) Figure 5. Small Signal Gain and Input and Output VSWR at 25% IDSS and VD = 8V Figure 6. Output Power, Small Signal Gain, Power Added Efficiency, and Drain Current vs. Junction Temperature at 8V, 7.5 GHz, and 25% IDSS Drain Current (A) Pout (dBm) All Data is at 25ºC MMIC base temperature, CW stimulus, unless otherwise noted. Amplifier, Power, 1.2W 5.7-8.5 GHz MAAPGM0068-DIE Rev B Preliminary Datasheet All Data is at 25ºC MMIC base temperature, CW stimulus, unless otherwise noted. 40 35 38 33 36 34 31 29 30 28 Gain (dB) Output Power (dBm) 32 26 24 22 6 GHz 7 GHz 8 GHz 9 GHz 20 18 16 27 25 23 21 6 GHz 7 GHz 8 GHz 19 14 17 12 15 10 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 12 14 16 18 20 22 24 26 28 30 32 34 Input Power (dBm) Output Power (dBm) Figure 7. Output Power vs. Input Power and Frequency at 10V and 25% IDSS Figure 8. Gain vs. Output Power and Frequency at 10V and 25% IDSS 36 1.0 50 0.9 45 35 0.7 Drain Current (A) 40 PAE (%) 0.8 6 GHz 7 GHz 8 GHz 9 GHz 30 25 20 0.5 0.4 0.3 15 10 0.2 5 0.1 6 GHz 7 GHz 8 GHz 9 GHz 0.0 0 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 -12 12 -10 -8 -6 -4 -2 0 2 4 6 8 10 Input Power (dBm) Input Power (dBm) Figure 9. Power Added Efficiency vs. Input Power and Frequency at 10V and 25% IDSS Figure 10. Drain Current vs. Input Power and Frequency at 10V and 25% IDSS 12 35 40 38 33 36 31 34 32 29 30 28 Gain (dB) Output Power (dBm) 0.6 26 24 22 6 GHz 7 GHz 8 GHz 9 GHz 20 18 16 27 25 23 21 19 14 6 GHz 7 GHz 8 GHz 17 12 15 10 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 12 14 16 18 20 22 24 26 28 30 32 34 Input Power (dBm) Output Power (dBm) Figure 11. Output Power vs. Input Power and Frequency at 8V and 25% IDSS Figure 12. Gain vs. Output Power and Frequency at 8V and 25% IDSS 36 Amplifier, Power, 1.2W 5.7-8.5 GHz MAAPGM0068-DIE Rev B Preliminary Datasheet All Data is at 25ºC MMIC base temperature, CW stimulus, unless otherwise noted. 1.0 50 0.9 45 6 GHz 7 GHz 8 GHz 9 GHz PAE (%) 35 0.8 0.7 Drain Current (A) 40 30 25 20 0.6 0.5 0.4 15 0.3 10 0.2 5 0.1 0 6 GHz 7 GHz 8 GHz 9 GHz 0.0 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 Input Power (dBm) Input Power (dBm) Figure 13. Power Added Efficiency vs. Input Power and Frequency at 8V and 25% IDSS Figure 14. Drain Current vs. Input Power and Frequency at 8V and 25% IDSS 50 12 100 48 90 46 44 6 GHz 7 GHz 8 GHz 80 42 70 38 IMD3 (dBc) TOI (dBm) 40 36 34 32 60 50 40 30 30 28 26 20 6 GHz 7 GHz 8 GHz 24 22 10 20 0 1 3 5 7 9 11 13 15 17 19 21 1 3 5 7 9 11 13 15 17 19 Fundamental Output Power, Single Tone (dBm) Fundamental Output Power per Tone (dBm) Figure 15. Third Order Intercept vs. Output Power and Frequency at 6V. Figure 16. Third Order Intermod vs. Output Power and Frequency at 6V. 50 21 100 48 6 GHz 7 GHz 8 GHz 90 46 44 80 42 70 38 IMD3 (dBc) TOI (dBm) 40 36 34 32 60 50 40 30 30 28 26 20 6 GHz 7 GHz 8 GHz 24 22 10 20 0 1 3 5 7 9 11 13 15 17 19 21 1 3 5 7 9 11 13 15 17 19 Fundamental Output Power, Single Tone (dBm) Fundamental Output Power per Tone (dBm) Figure 17. Third Order Intercept vs. Output Power and Frequency at 8V. Figure 18. Third Order Intermod vs. Output Power and Frequency at 8V. 21 Amplifier, Power, 1.2W 5.7-8.5 GHz MAAPGM0068-DIE Rev B Preliminary Datasheet All Data is at 25ºC MMIC base temperature, CW stimulus, unless otherwise noted. 50 100 48 90 46 44 6 GHz 7 GHz 8 GHz 80 42 70 38 IMD3 (dBc) TOI (dBm) 40 36 34 32 60 50 40 30 30 28 26 20 6 GHz 7 GHz 8 GHz 24 22 10 20 0 3 5 7 9 11 13 15 17 19 21 1 3 5 7 9 11 13 15 17 19 21 Fundamental Output Power, Single Tone (dBm) Fundamental Output Power per Tone (dBm) Figure 19. Third Order Intercept vs. Output Power and Frequency at 10V. Figure 20. Third Order Intermod vs. Output Power and Frequency at 10V. 50 60 48 55 46 50 44 45 42 40 IMD3 (dBc) TOI (dBm) 1 40 38 36 35 30 25 6 GHz 7 GHz 8 GHz 34 32 6 GHz 7 GHz 8 GHz 20 15 30 10 -20 -15 -10 -5 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 -20 -15 -10 -5 0 5 10 15 20 25 30 35 40 45 50 55 60 65 MMIC Base Temperature (ºC) MMIC Base Temperature (ºC) Figure 21. Third Order Intercept vs. Temperature and Frequency at 8V and Pout = 24 dBm DCL. Figure 22. Third Order Intermod vs. Temperature and Frequency at 8V and Pout = 24 dBm DCL. 70 75 Amplifier, Power, 1.2W 5.7-8.5 GHz MAAPGM0068-DIE Rev B Preliminary Datasheet Mechanical Information Chip Size: 2.000 x 3.150 x 0.075 mm (78 x 124 x 3 mils) Chip edge to bond pad dimensions are shown to the center of the bond pad. Figure 23. Die Layout Bond Pad Dimensions Pad Size (μm) Size (mils) RF In and Out 100 x 200 4x8 DC Drain Supply Voltage VDD 200 x 150 8x6 DC Gate Supply Voltage VGG 150 x 150 6x6 Amplifier, Power, 1.2W 5.7-8.5 GHz MAAPGM0068-DIE Rev B Preliminary Datasheet Assembly and Bonding Diagram VDD 0.01-0.1μF GND VDD VGG Gnd 100200 pF RF VDD RFOUT RFIN 100200 pF 300 Ω VGG 0.01-0.1μF GND Figure 24. Recommended operational configuration. Wire bond as shown. Die Handling: Refer to Application Note AN3016. Assembly Instructions: Die Attach: Use AuSn (80/20) 1 mil. preform solder. Limit time @ 310 °C to less than 7 minutes. Refer to Application Note AN3017 for more detailed information. Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier.