RoHS Compliant Amplifier, Distributed, 0.1W 1.0-18.0 GHz MAAMGM0002-DIE Rev E Features ♦ ♦ ♦ ♦ 0.1 Watt Saturated Output Power Level 4 dB Typical Noise Figure Select-at-Test Biasing MSAG™ Process Description The MAAMGM0002-Die is a 0.1W Distributed Amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. The MMIC can be used as a broadband amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested to ensure performance compliance. The part is fabricated using M/A-COM’s GaAs Multifunction SelfAligned Gate Process. Primary Applications ♦ Test Equipment ♦ Electronic Warfare ♦ Radar M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Also Available in: SAMPLES Description Ceramic Package Sample Board (Die) Sample Board (Packaged) Part Number MAAMGM0002 MAAMGM0002-DIE-SMB MAAMGM0002-SMB Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 5V, IDQ = 75 mA2, Pin = 13 dBm 1 1. 2. Parameter Symbol Minimum Bandwidth f 1.0 Output Power POUT 19.5 Power Added Efficiency Typical Maximum Units 18.0 GHz 21 dBm PAE 12 % 1-dB Compression Point P1dB 20 dBm Small Signal Gain G 9 dB Noise Figure NF 4 dB Output TOI OTOI 31 dBm Input VSWR f = 2 GHz VSWR 1.7:1 2:1 Output VSWR f = 2 GHz VSWR 1.7:1 2:1 Gate Current IGG <2 Drain Current IDD 100 7 mA 150 mA TB = MMIC Base Temperature Adjust VGG between –1.0 and –0.3 V to achieve IDQ indicated. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. RoHS Compliant Amplifier, Distributed, 0.1W 1.0-18.0 GHz MAAMGM0002-DIE Rev E Maximum Ratings3 Parameter Symbol Absolute Maximum Units Input Power PIN 19.0 dBm Drain Voltage VDD +7.0 V Gate Voltage VGG -1.5 V Gate Voltage, Select at Test HI, MID, LO -6.0 V Quiescent Drain Current (No RF) IDQ 120 mA Quiescent DC Power Dissipation (No RF) PDISS 0.5 W Junction Temperature TJ 170 °C Storage Temperature TSTG -55 to +150 °C 3. Operation beyond these limits may result in permanent damage to the part. Recommended Operating Conditions4 Parameter Symbol Min Typ Max Unit Drain Voltage VDD 4.5 5.0 5.5 V Gate Voltage VGG -1.0 -0.6 -0.3 V Gate Voltage, Select at Test HI, MID, LO -5.0 Input Power PIN 13 Thermal Resistance ΘJC 91.2 MMIC Base Temperature TB V 17 dBm °C/W Note 5 °C 4. Operation outside of these ranges may reduce product reliability. 5. MMIC Base Temperature = 170°C — ΘJC* VDD * IDQ Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps according to which configuration you are using. Select-at-Test Gate Bias Figure 5a. 1. With VDD = 0, apply VGG = -5V to HI, MID or LO for desired IDQ. Direct Gate Bias Figure 5b. 1. With VDD = 0 V, set VGG = -0.8 V. 2. Set VDD = 5 V. 2. Set VDD = 5V. Confirm IDQ. 3. Adjust VGG for desired IDQ. 3. Power down sequence in reverse. 4. Power down sequence in reverse. 4.Turn off VGG last. 5. Turn off VGG last. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. RoHS Compliant Amplifier, Distributed, 0.1W 1.0-18.0 GHz MAAMGM0002-DIE Rev E 30 12 28 POUT PAE 26 11 24 10 22 9 20 8 18 7 16 14 6 12 5 10 4 8 6 3 4 2 2 1 0 0.5 2.5 4.5 6.5 8.5 10.5 12.5 14.5 16.5 18.5 20.5 22.5 Frequency (GHz) Gain, Idq = 25% Gain, Idq = 35% Gain, Idq = 50% NF, Idq = 25% NF, Idq = 35% NF, Idq = 50% 0 2 4 6 8 10 12 14 16 18 Frequency (GHz) Figure 2. Gain and Noise Figure vs Idq as a Relative Percentage of Idss (50% Idss ~ 100 mA). Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 5V, Pin = 14dBm. 6 Input VSWR Output VSWR 5 4 3 2 1 0.5 2.5 4.5 6.5 8.5 10.5 12.5 14.5 16.5 18.5 20.5 22.5 Frequency (GHz) Figure 3. Input and Output VSWR. 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. RoHS Compliant Amplifier, Distributed, 0.1W 1.0-18.0 GHz MAAMGM0002-DIE Rev E Mechanical Information Chip Size: 2.98 x 1.98 x 0.075 mm (118 x 78 x 3 mils) 2.980mm. 2.853mm. 0.970mm. 0.127mm. 1.980mm. 1.828mm. VDD OUT IN 0.569mm. 1.094mm. MID LO VGG GND 1.925mm. 2.225mm. 2.525mm. HI 1.625mm. 0.152mm. 0 1.325mm. 0 Figure 4. Die Layout Bond Pad Dimensions Pad Size (μm) Size (mils) RF: IN, OUT 100 x 100 4x4 Drain Supply Voltage: VDD 150 x 150 6x6 Direct Gate Supply Voltage: VGG 150 x 150 6x6 Select-at-Test Gate Supply Voltage: HI, MID, LO 150 x 150 6x6 Ground: GND 150 x 150 6x6 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. RoHS Compliant Amplifier, Distributed, 0.1W 1.0-18.0 GHz MAAMGM0002-DIE Rev E VDD 0.1 μF 100 pF VDD RFOUT OUT RFIN IN HI MID LO VGG GND 100 pF Wirebond required to reference on-chip Select-at-Test bias network. VGG 0.1 μF Figure 5a. Required Bonding for Select-at-Test Gate Bias Configuration. Support circuitry typical of MMIC characterization fixture for CW testing. Pad Applied Voltage (V) % IDSS HI -5 50 MID -5 35 LO -5 25 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. RoHS Compliant Amplifier, Distributed, 0.1W 1.0-18.0 GHz MAAMGM0002-DIE Rev E Assembly and Bonding Diagram VDD 0.1 μF 100 pF VDD RFOUT OUT RFIN IN HI MID LO VGG GND 100 pF VGG 0.1 μF Figure 5b. Required Bonding for Direct Application of Gate Bias. Support circuitry typical of MMIC characterization fixture for CW testing. Pad Applied Voltage (V) % IDSS VGG -1.0 to -0.3 25 - 50 Die Handling: Refer to Application Note AN3016. Assembly Instructions: Die Attach: Use AuSn (80/20) 1 mil. preform solder. Limit time @ 310 °C to less than 7 minutes. Refer to Application Note AN3017 for more detailed information. Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. 6 Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.