2SC5000 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5000 Power Amplifier Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 5 A) Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Collector current IC 10 A Base current IB 1 A Collector power dissipation PC 25 W Junction temperature Tj 150 °C Tstg −55 to 150 °C Storage temperature range JEDEC ― JEITA ― TOSHIBA Weight: 1.7 g (typ.) Electrical Characteristics (Tc = 25°C) Characteristics 2-10R1A Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 70 V, IE = 0 ― ― 1 µA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 1 µA V (BR) CEO IC = 10 mA, IB = 0 50 ― ― V hFE (1) VCE = 1 V, IC = 1 A 120 ― 400 Collector-emitter VCE (sat) IC = 5 A, IB = 0.25 A ― 0.19 0.4 Base-emitter VBE (sat) IC = 5 A, IB = 0.25 A ― 0.96 1.4 fT VCE = 1 V, IC = 1 A ― 90 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 90 ― pF Collector-emitter breakdown voltage DC current gain Saturation voltage Transition frequency Collector output capacitance Cob V Marking C5000 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2004-07-26 2SC5000 IC – VCE 10 70 Common emitter VCE = 1 V 60 IC (A) 50 8 40 6 30 Collector current Collector current IC (A) 80 IC – VBE 20 20 4 IB = 10 mA 2 16 12 100 8 Tc = −25°C 4 25 Common emitter Tc = 25°C 0 0 2 4 6 Collector-emitter voltage 8 VCE 0 0 10 0.4 (V) 0.8 Base-emitter voltage hFE – IC hFE Collector-emitter saturation voltage VCE (sat) (V) Tc = 100°C 300 DC current gain VBE 2.0 (V) VCE (sat) – IC 500 100 25 −25 50 30 10 5 1 0.01 1.6 10 1000 3 1.2 Common emitter VCE = 1 V 0.1 1 10 Common emitter IC/IB = 20 5 3 1 0.5 0.3 Tc = 100°C 25 0.1 −25 0.05 0.03 0.01 0.01 30 0.1 Collector current IC (A) 1 10 30 Collector current IC (A) Safe Operating Area 30 IC max (pulsed)* 10 IC max (continuous) * 10 ms* 3 Common emitter IC/IB = 20 1 0.5 −25 0.3 Tc = 100°C 25 (A) Base-emitter saturation voltage VBE (sat) (V) 5 5 Collector current IC VBE (sat) – IC 10 3 1 0.5 0.3 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.03 0.01 0.01 100 µs* 100 ms* 0.1 0.05 1 ms* DC operation Tc = 25°C 0.1 1 10 0.1 1 30 Collector current IC (A) 3 5 VCEO max 10 Collector-emitter voltage 2 30 VCE 50 100 (V) 2004-07-26 2SC5000 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 3 2004-07-26