TI DS125MB203

DS125MB203
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SNLS432B – OCTOBER 2012 – REVISED APRIL 2013
Low-Power 12.5-Gbps Dual-Lane 2:1/1:2 Mux/Buffer With Equalization and De-Emphasis
Check for Samples: DS125MB203
FEATURES
DESCRIPTION
•
The DS125MB203 is an extremely low-power highperformance dual-port 2:1 mux and 1:2 switch/fanout
designed to support high-availability systems using
PCIe Gen-3/2/1, 10G-KR, and other high-speed
interface serial protocols up to 12.5 Gbps. The
integrated signal conditioning function eliminates the
need for external devices, reducing BOM cost and
board space. The receiver's continuous time linear
equalizer (CTLE) provides a boost of up to +30 dB at
6.25 GHz (12.5 Gbps) and is capable of opening an
input eye that is completely closed due to inter
symbol interference (ISI) induced by interconnect
medium such as 30in+ backplane traces or 8m+
copper cables. The transmitter provides a deemphasis boost of up to -12 dB and output voltage
amplitude control from 700 mV to 1300 mV.
1
2
•
•
•
•
•
•
•
•
Comprehensive Family, Proven System
Interoperability
– DS125BR111: One-Lane Repeater
– DS125BR210: Two-Channel Repeater
– DS125BR401: Four-Lane Repeater
– DS125BR800: Eight-Channel Repeater
– DS125MB203: Two-Port, 2:1/1:2 Mux
– DS125DF410: Four-Channel Retimer With
CDR
Low 65-mW/Channel (Typical) Power
Consumption, With Option to Power Down
Unused Channels
Transparent Management of Link Training
Protocol for PCIe and 10G-KR
Advanced Signal Conditioning Features
– Receive Equalization up to 30dB at 6.25
GHz
– Transmit De-emphasis up to -12dB
– Transmit Output Voltage Control: 700 mV to
1300 mV
Programmable via Pin Selection, EEPROM, or
SMBus Interface
Single Supply Voltage: 2.5 V or 3.3 V
(selectable)
40°C to 85°C Operating Temperature Range
3-kV HBM ESD Rating
Flow-Thru Pinout in 10mmx5.5mm 54-Pin
Leadless QFN Package
When operating in 10G-KR and PCIe Gen-3 mode,
the DS125MB203 transparently allows the host
controller and the end point to optimize the full link
and negotiate transmit equalizer coefficients. This
seamless management of the link training protocol
ensures system level interoperability with minimum
latency. With a low power consumption of 390 mW
(typ) total or 195 mW/port (bidirectional) and option to
turn off unused ports, the DS125MB203 enables
energy-efficient system design. A single supply of
3.3 V or 2.5 V is required to power the device.
The programmable settings can be applied via pin
settings, SMBus (I2C) protocol or an external
EEPROM. When operating in the EEPROM mode,
the configuration information is automatically loaded
on power up. This eliminates the need for an external
microprocessor or software driver.
SUPPORTED PROTOCOLS
•
•
•
•
SAS/SATA (up to 6 Gbps), Fibre Channel (up
to 10GFC)
PCIe Gen-3/2/1, 10G-KR, 10GbE, XAUI, RXAUI
sRIO, Infiniband, Interlaken, CPRI, OBSAI
Other proprietary interface up to 12.5 Gbps
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2012–2013, Texas Instruments Incorporated
DS125MB203
SNLS432B – OCTOBER 2012 – REVISED APRIL 2013
www.ti.com
Typical Application
DS125MB203
SEL0
ASIC_2
S_INA0
TXA_0
ASIC_3
D_OUT0
RX
S_INB0
ASIC_0
TXB_0
TX
S_INA1
TXA_1
D_OUT1
S_INA1
TXB_1
ASIC_1
RX
S_OUTA0
RXA_0
D_IN0
TX
S_OUTB0
RXB_0
S_OUTA1
D_IN1
RXA_1
S_OUTB1
RXB_1
SEL1
2
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SNLS432B – OCTOBER 2012 – REVISED APRIL 2013
PWDN
VDD
DEM_S1/SCL
DEM_S0/SDA
ENSMB
EQ_S1/AD2
EQ_S0/AD3
51
50
49
48
47
46
DEM_D0/AD1
53
52
DEM_D1/AD0
54
Pin Diagram
SMBUS AND CONTROL
NC
1
45
S_INA0+
NC
2
44
S_INA0-
D_OUT0+
3
43
S_INB0+
D_OUT0-
4
42
S_INB0-
NC
5
41
VDD
NC
6
40
S_INA1+
D_OUT1+
7
39
S_INA1-
D_OUT1-
8
38
S_INB1+
37
S_INB1-
TOP VIEW
DAP = GND
VDD
9
D_IN0+
10
36
VDD
D_IN0-
11
35
S_OUTA0+
NC
12
34
S_OUTA0-
NC
13
33
S_OUTB0+
VDD
14
32
S_OUTB0-
D_IN1+
15
31
S_OUTA1+
D_IN1-
16
30
S_OUTA1-
NC
17
29
S_OUTB1+
NC
18
28
S_OUTB1-
19
20
21
22
23
24
25
26
27
EQ_D1
EQ_D0
MODE
INPUT_EN
SEL0
VIN
VDD_SEL
SEL1 / READ_EN
ALL_DONE
LDO REG
3.3V to 2.5V
NOTE: Above 54-lead QFN graphic is a TOP VIEW, looking down through the package.
Figure 1. DS125MB203 Pin Diagram 54 Lead WQFN Package
See Package Number NJY0054A
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PIN DESCRIPTIONS (1)
Pin Name
Pin Number
I/O, Type
Pin Description
Differential High Speed I/O's
D_IN0+, D_IN0-,
D_IN1+, D_IN1-
10, 11,
15, 16
I
Inverting and non-inverting CML differential inputs to the equalizer. Onchip 50Ω termination resistor connects D_INn+ to VDD and D_INn- to
VDD.
AC coupling required on high-speed I/O
D_OUT0+, D_ OUT0-,
D_OUT1+, D_OUT1-
3, 4,
7, 8
O
Inverting and non-inverting 50Ω driver outputs with de-emphasis.
Compatible with AC coupled CML inputs.
AC coupling required on high-speed I/O
S_INA0+, S_INA0-,
S_INA1+, S_INA1-
45, 44,
40, 39
I
Inverting and non-inverting CML differential inputs to the equalizer. Onchip 50Ω termination resistor connects S_INAn+ to VDD and S_INAn- to
VDD.
AC coupling required on high-speed I/O
S_OUTA0+, S_OUTA0-,
S_OUTA1+, S_OUTA1-
35, 34,
31, 30
O
Inverting and non-inverting 50Ω driver outputs with de-emphasis.
Compatible with AC coupled CML inputs.
AC coupling required on high-speed I/O
S_INB0+, S_INB0-,
S_INB1+, S_INB1-
43, 42,
38, 37
I
Inverting and non-inverting CML differential inputs to the equalizer. Onchip 50Ω termination resistor connects S_INBn+ to VDD and S_INBn- to
VDD.
AC coupling required on high-speed I/O
S_OUTB0+, S_OUTB0-,
S_OUTB1+, S_OUTB1-
33, 32,
29, 28
O
Inverting and non-inverting 50Ω driver outputs with de-emphasis.
Compatible with AC coupled CML inputs.
AC coupling required on high-speed I/O
I, FLOAT,
LVCMOS
System Management Bus (SMBus) enable pin
Tie 1kΩ to VDD = Register Access SMBus Slave mode
FLOAT = Read External EEPROM (Master SMBUS Mode)
Tie 1kΩ to GND = Pin Mode
Control Pins - Shared (LVCMOS)
ENSMB
48
ENSMB = 1 (SMBUS SLAVE MODE), Float (SMBUS MASTER MODE)
SCL
50
I, LVCMOS,
O, OPEN
Drain
ENSMB Master or Slave mode
SMBUS clock input pin is enabled (slave mode)
SMBUS clock output when loading configuration from EEPROM (master
mode)
SDA
49
I, LVCMOS,
O, OPEN
Drain
ENSMB Master or Slave mode
The SMBus bidirectional SDA pin is enabled. Data input or open drain
(pull-down only) output.
AD0-AD3
54, 53, 47, 46
I, LVCMOS
ENSMB Master or Slave mode
SMBus Slave Address Inputs. In SMBus mode, these pins are the user
set SMBus slave address inputs.
READ_EN
26
I, LVCMOS
ENSMB = FLOAT (SMBUS master mode)
When using an External EEPROM, a transition from high to low starts
the load from the external EEPROM
20, 19
46, 47
I, 4-LEVEL,
LVCMOS
EQ_D[1:0] and EQ_S[1:0] control the level of equalization on the high
speed input pins. The pins are active only when ENSMB is deasserted
(low). The input are organized into two sides. The D side is controlled
with the EQ_D[1:0] pins and the S side is controlled with the EQ_S[1:0]
pins. When ENSMB goes high the SMBus registers provide independent
control of each channel. The EQ_S[1:0] pins are converted to SMBUS
AD2/ AD3 inputs. EQ_D[1:0] pins are not used.
See Table 2
ENSMB = 0 (PIN MODE)
EQ_D0, EQ_D1
EQ_S0, EQ_S1
(1)
4
LVCMOS inputs without the “Float” conditions must be driven to a logic low or high at all times or operation is not ensured. Input edge
rate for LVCMOS/FLOAT inputs must be faster than 50 ns from 10–90%. Input edge rate for LVCMOS/FLOAT inputs must be faster
than 50 ns from 10–90%. For 3.3V mode operation, VIN pin = 3.3V and the "VDD" for the 4-level input is 3.3V. For 2.5V mode
operation, VDD pin = 2.5V and the "VDD" for the 4-level input is 2.5V.
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SNLS432B – OCTOBER 2012 – REVISED APRIL 2013
PIN DESCRIPTIONS(1) (continued)
Pin Name
DEM_S0, DEM_S1
DEM_D0, DEM_D1
Pin Number
49, 50
53, 54
I/O, Type
I, 4-LEVEL,
LVCMOS
Pin Description
DEM_D[1:0] and DEM_S[1:0] control the level of VOD and de-emphasis
on the high speed output. The pins are active only when ENSMB is
deasserted (low). The output are organized into two sides. The D side is
controlled with the DEM_D[1:0] pins and the S side is controlled with the
DEM_S[1:0] pins. When ENSMB goes high the SMBus registers provide
independent control of each channel. The DEM_D[1:0] and DEM_S[1:0]
pins are converted to SMBUS AD1/AD0 and SCL/SDA inputs.
See Table 3
Control Pins — Both Pin and SMBus Modes (LVCMOS)
MODE
21
I, 4-LEVEL,
LVCMOS
MODE control pin selects operating modes.
Tie 1kΩ to GND = GEN 1,2 and SAS 1,2
Float = Auto Mode Select (for PCIe)
Tie 20kΩ to GND = PCIe GEN-3 without De-emphasis
Tie 1kΩ to VDD = PCIe GEN-3 with De-emphasis
See Table 7
INPUT_EN
22
I, 4-LEVEL,
LVCMOS
0: Normal Operation, FANOUT is disabled, use SEL0/1 to select the A
or B input/output (see SEL0/1 pin), input always enabled with 50 ohms.
20kΩ to GND: Reserved
FLOAT: AUTO - Use RX Detect, SEL0/1 to determine which input or
output to enable, FANOUT is disable
1: Normal Operation, FANOUT is enabled (both S_OUT0/1 are ON).
Input always enabled with 50 ohms.
SEL0
23
I, 4-LEVEL,
LVCMOS
Select pin for Lane 0.
0: selects input S_INB0+/-, output S_OUTB0+/-.
20kΩ to GND: selects input S_INB0+/-, output S_OUTA0+/-.
FLOAT: selects input S_INA0+/-, output S_OUTB0+/-.
1: selects input S_INA0+/-, output S_OUTA0+/-.
SEL1
26
I, 4-LEVEL,
LVCMOS
Select pin for Lane 1.
0: selects input S_INB1+/-, output S_OUTB1+/-.
20kΩ to GND: selects input S_INB1+/-, output S_OUTA1+/-.
FLOAT: selects input S_INA1+/-, output S_OUTB1+/-.
1: selects input S_INA1+/-, output S_OUTA1+/-.
VDD_SEL
25
I, FLOAT
Controls the internal regulator
FLOAT = 2.5V mode
Tied to GND: 3.3V mode
PWDN
52
I, LVCMOS
0: Normal Operation (device is enabled).
1: Low Power Mode.
27
0, LVCMOS
Valid Register Load Status Output
0: External EEPROM load passed
1: External EEPROM load failed
VIN
24
Power
In 3.3V mode, feed 3.3V +/-10% to VIN
In 2.5V mode, leave floating.
VDD
9, 14,36, 41, 51
Power
Power supply pins CML/analog
2.5V mode, connect to 2.5V +/-5%
3.3V mode, connect 0.1 uF cap to each VDD pin
GND
DAP
Power
Ground pad (DAP - die attach pad).
Output (LVCMOS)
ALL_DONE
Power
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SNLS432B – OCTOBER 2012 – REVISED APRIL 2013
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings (1) (2)
Supply Voltage (VDD - 2.5V mode)
-0.5V to +2.75V
Supply Voltage (VIN - 3.3V mode)
-0.5V to +4.0V
LVCMOS Input/Output Voltage
-0.5V to +4.0V
CML Input Voltage
-0.5V to (VDD+0.5)
CML Input Current
-30 to +30 mA
Junction Temperature
125°C
Storage Temperature
-40°C to +125°C
Lead Temperature Range Soldering (4 sec.)
+260°C
Derate NJY0054A Package
ESD Rating
52.6mW/°C above +25°C
HBM, STD - JESD22-A114F
3 kV
MM, STD - JESD22-A115-A
150 V
CDM, STD - JESD22-C101-D
Thermal Resistance
1000 V
θJC
11.5°C/W
θJA, No Airflow, 4 layer JEDEC
19.1°C/W
For soldering specifications: See application note SNOA549.
(1)
(2)
“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating
Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. Absolute
Maximum Numbers are ensured for a junction temperature range of -40°C to +125°C. Models are validated to Maximum Operating
Voltages only.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
Recommended Operating Conditions
Min
Typ
Max
Unit
2.375
2.5
2.625
V
Supply Voltage (3.3V mode)
3.0
3.3
3.6
V
Ambient Temperature
-40
25
+85
°C
Supply Voltage (2.5V mode)
SMBus (SDA, SCL)
3.6
V
Supply Noise up to 50 MHz (1)
100
mVp-p
(1)
Allowed supply noise (mVp-p sine wave) under typical conditions.
Electrical Characteristics
Parameter
Test Conditions
Min
Typ
Max
Unit
VDD = 2.5 V supply
EQ Enabled,
VOD = 1.0 Vp-p,
PWDN = 0
390
500
mW
VIN = 3.3 V supply
EQ Enabled,
VOD = 1.0 Vp-p,
PWDN = 0
515
685
mW
Power
IDD
Power Dissipation
LVCMOS / LVTTL DC Specifications
Vih
High Level Input Voltage
2.0
3.6
V
Vil
Low Level Input Voltage
0
0.8
V
Voh
High Level Output Voltage
(ALL_DONE pin)
6
Ioh= −4mA
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2.0
V
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SNLS432B – OCTOBER 2012 – REVISED APRIL 2013
Electrical Characteristics (continued)
Parameter
Test Conditions
Vol
Low Level Output Voltage
(ALL_DONE pin)
Iol= 4mA
Iih
Input High Current (RESET pin)
VIN = 3.6 V,
LVCMOS = 3.6 V
Input High Current
with internal resistors
(4–level input pin)
Iil
Input Low Current (RESET pin)
Input Low Current
with internal resistors
(4–level input pin)
VIN = 3.6 V,
LVCMOS = 0 V
Min
Typ
Max
Unit
0.4
V
-15
+15
uA
+20
+150
uA
-15
+15
uA
-160
-40
uA
CML Receiver Inputs (IN_n+, IN_n-)
RLrx-diff
RX Differential return loss
0.05 - 7.5 GHz
-15
dB
7.5 - 15 GHz
-5
dB
RLrx-cm
RX Common mode return loss
Zrx-dc
RX DC common mode impedance Tested at VDD = 2.5 V
0.05 - 5 GHz
40
-10
50
60
dB
Ω
Zrx-diff-dc
RX DC differntial mode
impedance
Tested at VDD = 2.5 V
80
100
120
Ω
Vrx-diff-dc
Differential RX peak to peak
voltage (VID)
Tested at pins
0.6
1.0
1.2
V
Vrx-signal-det-diff-pp Signal detect assert level for
active data signal
0101 pattern at 12.5 Gbps
180
mVp-p
Vrx-idle-det-diff-pp
0101 pattern at 12.5 Gbps
110
mVp-p
Signal detect de-assert level for
electrical idle
High Speed Outputs
Vtx-diff-pp
Output Voltage Differential Swing
Differential measurement with
OUT_n+ and OUT_n-,
terminated by 50Ω to GND,
AC-Coupled, VID = 1.0 Vp-p,
DEM_x[1:0] = R, F,
0.8
1.0
1.2
Vp-p
(1)
Vtx-de-ratio_3.5
TX de-emphasis ratio
VOD = 1.0 Vp-p,
DEM_x[1:0] = R, F
-3.5
dB
Vtx-de-ratio_6
TX de-emphasis ratio
VOD = 1.0 Vp-p,
DEM_x[1:0] = F, 0
-6
dB
TTX-HF-DJ-DD
TX Dj > 1.5 MHz
TTX-HF-DJ-DD
TX RMS jitter < 1.5 MHz
TTX-RISE-FALL
TX rise/fall time
20% to 80% of differential output
voltage
TRF-MISMATCH
TX rise/fall mismatch
20% to 80% of differential output
voltage
0.01
RLTX-DIFF
TX Differential return loss
0.05 - 7.5 GHz
-15
dB
7.5 - 15 GHz
-5
dB
-10
dB
RLTX-CM
TX Common mode return loss
ZTX-DIFF-DC
DC differential TX impedance
VTX-CM-AC-PP
TX AC common mode voltage
VOD = 1.0 Vp-p,
DEM_x[1:0] = R, F
ITX-SHORT
TX short circuit current limit
Total current the transmitter can
supply when shorted to VDD or
GND
VTX-CM-DC-
Absolute delta of DC common
mode voltage during L0 and
electrical idle
ACTIVE-IDLE-DELTA
(1)
0.05 - 5 GHz
35
0.15
UI
3.0
ps RMS
45
ps
0.1
UI
Ω
100
100
mVpp
20
mA
100
mV
In PCIe GEN3 mode, the output VOD level is not fixed. It will be adjusted automatically based on the VID input amplitude level. The
output VOD level set by DEM_x[1:0] in GEN3 mode is dependent on the VID level and the frequency content. The DS125MB203
repeater in GEN3 mode is designed to be transparent, so the TX-FIR (de-emphasis) is passed to the RX to support the PCIe GEN3
handshake negotiation link training.
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Electrical Characteristics (continued)
Parameter
VTX-CM-DC-LINEDELTA
Test Conditions
Min
Typ
Absolute delta of DC common
mode voltgae between TX+ and
TX-
Max
Unit
25
mV
TTX-IDLE-DATA
Max time to transition to
VID = 1.0 Vp-p, 8 Gbps
differential DATA signal after IDLE
3.5
ns
TTX-DATA-IDLE
Max time to transition to IDLE
after differential DATA signal
VID = 1.0 Vp-p, 8 Gbps
6.2
ns
TPLHD/PHLD
Differential Propagation Delay
EQ = 00,
(2)
200
ps
TLSK
Lane to lane skew
T = 25C, VDD = 2.5V
25
ps
TPPSK
Part to part propagation delay
skew
T = 25C, VDD = 2.5V
40
ps
TMUX-SWITCH
Mux/Switch Time
100
ns
Equalization
DJE1
Residual deterministic jitter at 12
Gbps
30” 5mils FR4,
VID = 0.6 Vp-p,
PRBS15, EQ = 07'h,
DEM = 0 dB
0.18
UI
DJE2
Residual deterministic jitter at 8
Gbps
30” 5mils FR4,
VID = 0.6 Vp-p,
PRBS15, EQ = 07'h,
DEM = 0 dB
0.11
UI
DJE3
Residual deterministic jitter at 5
Gbps
30” 5mils FR4,
VID = 0.6 Vp-p,
PRBS15, EQ = 07'h,
DEM = 0 dB
0.07
UI
DJE4
Residual deterministic jitter at 12
Gbps
5 meters 30 awg cable,
VID = 0.6 Vp-p,
PRBS15,EQ = 07'h,
DEM = 0 dB
0.25
UI
DJE5
Residual deterministic jitter at 12
Gbps
8 meters 30 awg cable,
VID = 0.6 Vp-p,
PRBS15, EQ = 0F'h,
DEM = 0 dB
0.33
UI
Input Channel: 20” 5mils FR4,
Output Channel: 10” 5mils FR4,
VID = 0.6 Vp-p,
PRBS15, EQ = 03'h,
VOD = 1.0 Vp-p,
DEM = −3.5 dB
0.1
UI
De-emphasis (MODE = 0)
DJD1
(2)
8
Residual deterministic jitter at 12
Gbps
Propagation Delay measurements will change slightly based on the level of EQ selected. EQ = 00 will result in the shortest propagation
delays.
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Electrical Characteristics — Serial Management Bus Interface
Over recommended operating supply and temperature ranges unless other specified.
Parameter
Test Conditions
Min
Typ
Max
Unit
0.8
V
3.6
V
SERIAL BUS INTERFACE DC SPECIFICATIONS
VIL
Data, Clock Input Low Voltage
VIH
Data, Clock Input High Voltage
IPULLUP
Current Through Pull-Up Resistor
or Current Source
VDD
Nominal Bus Voltage
ILEAK-Bus
Input Leakage Per Bus Segment
ILEAK-Pin
Input Leakage Per Device Pin
CI
Capacitance for SDA and SCL
(1) (2)
RTERM
External Termination Resistance
pull to VDD = 2.5V ± 5% OR 3.3V ±
10%
Pullup VDD = 3.3V,
2000
Ω
Pullup VDD = 2.5V,
1000
Ω
2.1
High Power Specification
(1)
4
mA
2.375
3.6
V
-200
+200
µA
-15
µA
10
(1) (2) (3)
(1) (2) (3)
pF
SERIAL BUS INTERFACE TIMING SPECIFICATIONS
FSMB
Bus Operating Frequency
ENSMB = VDD (Slave Mode)
ENSMB = FLOAT (Master Mode)
TBUF
Bus Free Time Between Stop and
Start Condition
THD:STA
Hold time after (Repeated) Start
Condition. After this period, the first
clock is generated.
280
400
400
kHz
520
kHz
1.3
µs
0.6
µs
At IPULLUP, Max
TSU:STA
Repeated Start Condition Setup
Time
0.6
µs
TSU:STO
Stop Condition Setup Time
0.6
µs
THD:DAT
Data Hold Time
0
ns
TSU:DAT
Data Setup Time
100
ns
TLOW
Clock Low Period
1.3
µs
THIGH
Clock High Period
(4)
50
µs
tF
Clock/Data Fall Time
(4)
300
ns
tR
Clock/Data Rise Time
(4)
300
ns
tPOR
Time in which a device must be
operational after power-on reset
500
ms
(1)
(2)
(3)
(4)
(5)
0.6
(4) (5)
Recommended value.
Recommended maximum capacitance load per bus segment is 400pF.
Maximum termination voltage should be identical to the device supply voltage.
Compliant to SMBus 2.0 physical layer specification. See System Management Bus (SMBus) Specification Version 2.0, section 3.1.1
SMBus common AC specifications for details.
Ensured by Design. Parameter not tested in production.
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TIMING DIAGRAMS
(OUT+)
80%
80%
VOD (p-p) = (OUT+) ± (OUT-)
0V
20%
20%
(OUT-)
tRISE
tFALL
Figure 2. CML Output and Rise and FALL Transition Time
+
IN
0V
tPHLD
tPLHD
+
0V
OUT
-
Figure 3. Propagation Delay Timing Diagram
+
IN
0V
DATA
tIDLE-DATA
tDATA-IDLE
+
OUT
0V
DATA
IDLE
IDLE
Figure 4. Transmit IDLE-DATA and DATA-IDLE Response Time
tLOW
tR
tHIGH
SCL
tHD:STA
tBUF
tHD:DAT
tF
tSU:STA
tSU:DAT
tSU:STO
SDA
SP
ST
SP
ST
Figure 5. SMBus Timing Parameters
10
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FUNCTIONAL DESCRIPTION
The DS125MB203 is a dual lane 2:1 multiplexer and 1:2 switch or fan-out buffer with signal conditioning. The
DS125MB203 compensates for lossy FR-4 printed circuit board backplanes and balanced cables. The
DS125MB203 operates in 3 modes: Pin Control Mode (ENSMB = 0), SMBus Slave Mode (ENSMB = 1) and
SMBus Master Mode (ENSMB = float) to load register informations from external EEPROM; please refer to
SMBUS Master Mode for additional information.
Pin Control Mode:
When in pin mode (ENSMB = 0), equalization and de-emphasis can be selected via pin for each side
independently. When de-emphasis is asserted VOD is automatically adjusted per Table 3. For PCIe applications,
the RXDET pins provides automatic and manual control for input termination (50Ω or >50KΩ). MODE setting is
also pin controllable with pin selections (Gen 1/2, auto detect and PCIe Gen 3). The receiver electrical idle detect
threshold is also adjustable via the SD_TH pin.
SMBUS Mode:
When in SMBus mode (ENSMB = 1), the VOD (output amplitude), equalization, de-emphasis, and termination
disable features are all programmable on a individual lane basis, instead of grouped by A or B as in the pin mode
case. Upon assertion of ENSMB, the EQx and DEMx functions revert to register control immediately. The EQx
and DEMx pins are converted to AD0-AD3 SMBus address inputs. The other external control pins (MODE,
INPUT_EN, and SD_TH) remain active unless their respective registers are written to and the appropriate
override bit is set, in which case they are ignored until ENSMB is driven low (pin mode). On power-up and when
ENSMB is driven low all registers are reset to their default state. If PWDN is asserted while ENSMB is high, the
registers retain their current state.
Equalization settings accessible via the pin controls were chosen to meet the needs of most high speed
applications. If additional fine tuning or adjustment is needed, additional equalization settings can be accessed
via the SMBus registers. Each input has a total of 256 possible equalization settings. The tables show the 16
setting when the device is in pin mode. When using SMBus mode, the equalization, VOD and de- Emphasis
levels are set by registers.
The 4-level input pins utilize a resistor divider to help set the 4 valid levels and provide a wider range of control
settings when ENSMB=0. There is an internal 30K pull-up and a 60K pull-down connected to the package pin.
These resistors, together with the external resistor connection combine to achieve the desired voltage level.
Using the 1K pull-up, 1K pull-down, no connect, and 20K pull-down provide the optimal voltage levels for each of
the four input states.
Table 1. 4-Level Control Pin Settings
Level
Setting
3.3V Mode
2.5V Mode
0
Tie 1kΩ to GND
0.10 V
0.08 V
1/3 x VDD
R
Tie 20kΩ to GND
1/3 x VIN
Float
Float (leave pin open)
2/3 x VIN
2/3 x VDD
1
Tie 1kΩ to VIN or VDD
VIN - 0.05 V
VDD - 0.04 V
Typical 4-Level Input Thresholds
• Level 1 - 2 = 0.2 * VIN or VDD
• Level 2 - 3 = 0.5 * VIN or VDD
• Level 3 - 4 = 0.8 * VIN or VDD
In order to minimize the startup current associated with the integrated 2.5V regulator the 1K pull-up / pull-down
resistors are recommended. If several 4 level inputs require the same setting, it is possible to combine two or
more 1K resistors into a single lower value resistor. As an example; combining two inputs with a single 500 Ohm
resistor is a good way to save board space.
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3.3V or 2.5V Supply Mode Operation
The DS125MB203 has an optional internal voltage regulator to provide the 2.5V supply to the device. In 3.3V
mode operation, the VIN pin = 3.3V is used to supply power to the device. The internal regulator will provide the
2.5V to the VDD pins of the device and a 0.1 uF cap is needed at each of the 5 VDD pins for power supply decoupling (total capacitance should be ≤0.5 uF), and the VDD pins should be left open. The VDD_SEL pin must
be tied to GND to enable the internal regulator. In 2.5V mode operation, the VIN pin should be left open and 2.5V
supply must be applied to the 5 VDD pins to power the device. The VDD_SEL pin must be left open (no connect)
to disable the internal regulator.
3.3V mode
2.5V mode
VDD_SEL
Enable
VDD_SEL
open
VIN
open
Disable
3.3V
1 uF
VIN
10 uF
Internal
voltage
regulator
2.5V
VDD
VDD
0.1 uF
0.1 uF
VDD
VDD
0.1 uF
0.1 uF
1 uF
2.5V
Capacitors can be
either tantalum or an
ultra-low ESR seramic.
10 uF
Internal
voltage
regulator
Capacitors can be
either tantalum or an
ultra-low ESR seramic.
VDD
VDD
0.1 uF
0.1 uF
VDD
VDD
0.1 uF
0.1 uF
VDD
VDD
0.1 uF
0.1 uF
Place 0.1 uF close to VDD Pin
Total capacitance should be 7 0.5 uF
Place capcitors close to VDD Pin
Figure 6. 3.3V or 2.5V Supply Connection Diagram
PCIe Signal Integrity
When using the DS125MB203 in PCIe GEN-3 systems, there are specific signal integrity settings to ensure
signal integrity margin. The settings were achieved with completing extensive testing. Please contact your field
representative for more information regarding the testing completed to achieve these settings.
For tuning the in the downstream direction (from CPU to EP).
• EQ: use the guidelines outlined in Table 2.
• De-Emphasis: use the guidelines outlined in Table 3.
• VOD: use the guidelines outlined in Table 3.
For tuning in the upstream direction (from EP to CPU).
• EQ: use the guidelines outlined in Table 2.
• De-Emphasis:
– For trace lengths < 15in set to -3.5 dB
– For trace lengths > 15in set to -6 dB
• VOD: set to 900 mV
12
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Table 2. Equalizer Settings
Level
EQ_D1
EQ_S1
EQ_D0
EQ_S0
EQ – 8 bits [7:0]
dB at
1.5 GHz
dB at
2.5 GHz
dB at
4 GHz
dB at
6 GHz
Suggested Use (1)
1
0
0
0000 0000 = 0x00
2.5
3.5
3.8
3.1
FR4 < 5 inch trace
2
0
R
0000 0001 = 0x01
3.8
5.4
6.7
6.7
FR4 5-10 inch trace
3
0
Float
0000 0010 = 0x02
5.0
7.0
8.4
8.4
FR4 10 inch trace
4
0
1
0000 0011 = 0x03
5.9
8.0
9.3
9.1
FR4 15-20 inch trace
5
R
0
0000 0111 = 0x07
7.4
10.3
12.8
13.7
FR4 20-30 inch trace
6
R
R
0001 0101 = 0x15
6.9
10.2
13.9
16.2
FR4 25-30 inch trace
7
R
Float
0000 1011 = 0x0B
9.0
12.4
15.3
15.9
FR4 25-30 inch trace
8
R
1
0000 1111 = 0x0F
10.2
13.8
16.7
17.0
8m, 30awg cable
9
Float
0
0101 0101 = 0x55
8.5
12.6
17.5
20.7
10
Float
R
0001 1111 = 0x1F
11.7
16.2
20.3
21.8
11
Float
Float
0010 1111 = 0x2F
13.2
18.3
22.8
23.6
12
Float
1
0011 1111 = 0x3F
14.4
19.8
24.2
24.7
13
1
0
1010 1010 = 0xAA
14.4
20.5
26.4
28.0
14
1
R
0111 1111 = 0x7F
16.0
22.2
27.8
29.2
15
1
Float
1011 1111 = 0xBF
17.6
24.4
30.2
30.9
16
1
1
1111 1111 = 0xFF
18.7
25.8
31.6
31.9
(1)
Cable and FR4 lengths are for reference only. FR4 lengths based on a 100 Ohm differential stripline with 5-mil traces and 8-mil trace
separation. Optimal EQ setting should be determined via simulation and prototype verification.
Table 3. De-emphasis and Output Voltage Settings
(1)
(2)
Level
DEM_D1
DEM_S1
DEM_D0
DEM_S0
VOD Vp-p
DEM dB (1)
Inner Amplitude
Vp-p
Suggested Use (2)
1
0
0
0.6
0
0.6
FR4 <5 inch 4–mil trace
2
0
R
0.8
0
0.8
FR4 <5 inch 4–mil trace
3
0
Float
0.8
- 3.5
0.55
FR4 10 inch 4–mil trace
4
0
1
0.9
0
1.0
FR4 <5 inch 4–mil trace
5
R
0
0.9
- 3.5
0.45
FR4 10 inch 4–mil trace
6
R
R
0.9
-6
0.5
FR4 15 inch 4–mil trace
7
R
Float
1.0
0
1.0
FR4 <5 inch 4–mil trace
8
R
1
1.0
- 3.5
0.7
FR4 10 inch 4–mil trace
9
Float
0
1.0
-6
0.5
FR4 15 inch 4–mil trace
10
Float
R
1.1
0
1.1
FR4 <5 inch 4–mil trace
11
Float
Float
1.1
- 3.5
0.7
FR4 10 inch 4–mil trace
12
Float
1
1.1
-6
0.55
FR4 15 inch 4–mil trace
13
1
0
1.2
0
1.2
FR4 <5 inch 4–mil trace
14
1
R
1.2
- 3.5
0.8
FR4 10 inch 4–mil trace
15
1
Float
1.2
-6
0.6
FR4 15 inch 4–mil trace
16
1
1
1.2
-9
0.45
FR4 20 inch 4–mil trace
The VOD output amplitude and DEM de-emphasis levels are set with the DEMD/S[1:0] pins.
The de-emphasis levels are also available in PCIe GEN-3 mode when MODE = 1 (tied to VDD).
FR4 lengths are for reference only. FR4 lengths based on a 100 Ohm differential stripline with 5-mil traces and 8-mil trace separation.
Optimal DEM settings should be determined via simulation and prototype verification.
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Table 4. Input Termination Condition with PWDN, INPUT_EN and SEL0 / SEL1
Input Termination
S_INA0
S_INA1
Input Termination
S_INB0
S_INB1
Input Termination
D_IN0
D_IN1
PWDN
(PIN 52)
INPUT_E
N (PIN 22
SEL0
SEL1
1
X
X
Low Power
High Z
High Z
High Z
0
0
X
Manual Mux
Mode
50 Ω
50 Ω
50 Ω
0
R
X
Reserved
Reserved
Reserved
Reserved
0
F
0
Auto continuous poll,
DIN_B
High Z
Pre Detect: Hi-Z
Post Detect: 50 Ω
Pre Detect: Hi-Z
Post Detect: 50 Ω
0
F
R
Auto continuous poll,
DIN_B
High Z
Pre Detect: Hi-Z
Post Detect: 50 Ω
Pre Detect: Hi-Z
Post Detect: 50 Ω
0
F
F
Auto continuous poll,
DIN_A
Pre Detect: Hi-Z
Post Detect: 50 Ω
High Z
Pre Detect: Hi-Z
Post Detect: 50 Ω
0
F
1
Auto continuous poll,
DIN_A
Pre Detect: Hi-Z
Post Detect: 50 Ω
High Z
Pre Detect: Hi-Z
Post Detect: 50 Ω
0
1
X
Manual Fanout
Mode
50 Ω
50 Ω
50 Ω
MODE
RX-Detect Polling in SAS/SATA (up to 6 Gbps) Applications
Unlike PCIe systems, SAS/SATA (up to 6 Gbps) systems use a low speed Out-Of-Band or OOB communications
sequence to detect and communicate between Controllers/Expanders and target drives. This communication
eliminates the need to detect for endpoints like PCIe. For non-PCIe systems, it is recommended to tie the
INPUT_EN pin high or low . This will ensure any OOB sequences sent from the SAS Controller/Expander will
reach the target drive without any additional latency due to the termination detection sequence defined by PCIe.
Table 5. Mux/Switch and Fanout Control
14
SEL0
(PIN 23)
SEL1
(PIN 26)
INPUT_EN
(PIN 22)
0
0
0
D_OUT0 connects to S_INB0.
D_OUT1 connects to S_INB1.
D_IN0 connects to S_OUTB0. S_OUTA0 is in IDLE (output muted).
D_IN1 connects to S_OUTB1. S_OUTA1 is in IDLE (output muted).
0
0
R
Reserved
0
0
F
D_OUT0 connects to S_INB0.
D_OUT1 connects to S_INB1.
D_IN0 connects to S_OUTB0. S_OUTA0 is in IDLE (output muted).
D_IN1 connects to S_OUTB1. S_OUTA1 is in IDLE (output muted).
0
0
1
D_OUT0 connects to S_INB0.
D_OUT1 connects to S_INB1.
D_IN0 connects to S_OUTB0 and S_OUTA0.
D_IN1 connects to S_OUTB1 and S_OUTA1.
R
R
0
D_OUT0 connects to S_INB0.
D_OUT1 connects to S_INB1.
D_IN0 connects to S_OUTA0. S_OUTB0 is in IDLE (output muted).
D_IN1 connects to S_OUTA1. S_OUTB1 is in IDLE (output muted).
R
R
R
Reserved
R
R
F
D_OUT0 connects to S_INB0.
D_OUT1 connects to S_INB1.
D_IN0 connects to S_OUTA0. S_OUTB0 is in IDLE (output muted).
D_IN1 connects to S_OUTA1. S_OUTB1 is in IDLE (output muted).
R
R
1
D_OUT0 connects to S_INB0.
D_OUT1 connects to S_INB1.
D_IN0 connects to S_OUTB0 and S_OUTA0.
D_IN1 connects to S_OUTB1 and S_OUTA1.
Description of Connection Path
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Table 5. Mux/Switch and Fanout Control (continued)
F
F
0
D_OUT0 connects to S_INA0.
D_OUT1 connects to S_INA1.
D_IN0 connects to S_OUTB0. S_OUTA0 is in IDLE (output muted).
D_IN1 connects to S_OUTB1. S_OUTA1 is in IDLE (output muted).
F
F
R
Reserved
F
F
F
D_OUT0 connects to S_INA0.
D_OUT1 connects to S_INA1.
D_IN0 connects to S_OUTB0. S_OUTA0 is in IDLE (output muted).
D_IN1 connects to S_OUTB1. S_OUTA1 is in IDLE (output muted).
F
F
1
D_OUT0 connects to S_INA0.
D_OUT1 connects to S_INA1.
D_IN0 connects to S_OUTB0 and S_OUTA0.
D_IN1 connects to S_OUTB1 and S_OUTA1.
1
1
0
D_OUT0 connects to S_INA0.
D_OUT1 connects to S_INA1.
D_IN0 connects to S_OUTA0. S_OUTB0 is in IDLE (output muted).
D_IN1 connects to S_OUTA1. S_OUTB1 is in IDLE (output muted).
1
1
R
Reserved
1
1
F
D_OUT0 connects to S_INA0.
D_OUT1 connects to S_INA1.
D_IN0 connects to S_OUTA0. S_OUTB0 is in IDLE (output muted).
D_IN1 connects to S_OUTA1. S_OUTB1 is in IDLE (output muted).
1
1
1
D_OUT0 connects to S_INA0.
D_OUT1 connects to S_INA1.
D_IN0 connects to S_OUTA0 and S_OUTB0.
D_IN1 connects to S_OUTA1 and S_OUTB1.
Table 6. Signal Detect Threshold Level (1)
(1)
SMBus REG bit [3:2] and [1:0]
Assert Level (typ)
De-assert Level (typ)
10
210 mVp-p
150 mVp-p
01
160 mVp-p
100 mVp-p
00 (default)
180 mVp-p
110 mVp-p
11
190 mVp-p
130 mVp-p
VDD = 2.5V, 25°C and 0101 pattern at 8 Gbps
Table 7. MODE Operation With Pin Control
MODE
(PIN 21)
Driver Characteristics
0
Limiting
R
Transparent without DE
F (default)
Automatic
1
Transparent with DE
PCIe
SAS
SATA
10G-KR
X
10GbE
CPRI
OBSAI
SRIO
(R)XAUI
Interlaken
Infiniband
X
X
X
X
X
X
Note: SAS/SATA limited to 6 Gbps. Automatic operation allows input to sense the incoming data-rate and utilize
a "Transparent" output driver for operation at or above 8 Gbps.
MODE operation with SMBus Registers
When in SMBus mode (Slave or Master), the MODE pin retains control of the output driver characteristics. In
order to override this control function, Register 0x08[2] must be written with a "1". Writting this bit enables MODE
control of each channel individually using the channel registers defined in Table 8.
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SMBUS Master Mode
The DS125MB203 devices support reading directly from an external EEPROM device by implementing SMBus
Master mode. When using the SMBus master mode, the DS125MB203 will read directly from specific location in
the external EEPROM. When designing a system for using the external EEPROM, the user needs to follow these
specific guidelines below. NOTE: SEL0, SEL1 and INPUT_EN control are to be set with the external strap
pins because there no EEPROM bits to configure them.
• Set ENSMB = Float — enable the SMBUS master mode.
• The external EEPROM device address byte must be 0xA0'h and capable of 400 kHz operation at 2.5V and
3.3V supply.
• Set the AD[3:0] inputs for SMBus address byte. When the AD[3:0] = 0000'b, the device address byte is B0'h.
When tying multiple DS125MB203 devices to the SDA and SCL bus, use these guidelines to configure the
devices.
• Use SMBus AD[3:0] address bits so that each device can loaded it's configuration from the EEPROM.
Example below is for 4 device.
– U1: AD[3:0] = 0000 = 0xB0'h,
– U2: AD[3:0] = 0001 = 0xB2'h,
– U3: AD[3:0] = 0010 = 0xB4'h,
– U4: AD[3:0] = 0011 = 0xB6'h
• Use a pull-up resistor on SDA and SCL; value = 2k ohms
• Daisy-chain READEN# (pin 26) and ALL_DONE# (pin 27) from one device to the next device in the sequence
so that they do not compete for the EEPROM at the same time.
– 1. Tie READEN# of the 1st device in the chain (U1) to GND
– 2. Tie ALL_DONE# of U1 to READEN# of U2
– 3. Tie ALL_DONE# of U2 to READEN# of U3
– 4. Tie ALL_DONE# of U3 to READEN# of U4
– 5. Optional: Tie ALL_DONE# output of U4 to a LED to show the devices have been loaded successfully
Below is an example of a 2 kbits (256 x 8-bit) EEPROM in hex format for the DS125MB203 device. The first 3
bytes of the EEPROM always contain a header common and necessary to control initialization of all devices
connected to the I2C bus. CRC enable flag to enable/disable CRC checking. If CRC checking is disabled, a fixed
pattern (8’hA5) is written/read instead of the CRC byte from the CRC location, to simplify the control. There is a
MAP bit to flag the presence of an address map that specifies the configuration data start in the EEPROM. If the
MAP bit is not present the configuration data start address is derived from the DS125MB203 address and the
configuration data size. A bit to indicate an EEPROM size > 256 bytes is necessary to properly address the
EEPROM. There are 37 bytes of data size for each DS125MB203 device.
:2000000000001000000407002FAD4002FAD4002FAD4002FAD401805F5A8005F5A8005F5AD8
:200020008005F5A800005454000000000000000000000000000000000000000000000000F6
:20006000000000000000000000000000000000000000000000000000000000000000000080
:20008000000000000000000000000000000000000000000000000000000000000000000060
:2000A000000000000000000000000000000000000000000000000000000000000000000040
:2000C000000000000000000000000000000000000000000000000000000000000000000020
:2000E000000000000000000000000000000000000000000000000000000000000000000000
:200040000000000000000000000000000000000000000000000000000000000000000000A0
16
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Table 8. EEPROM Register Map With Default Value
EEPROM
Address
Byte
Description 0
HEX
00
Binary
Description 1
00
Binary
Description 2
10
Binary
Description 3
00
Binary
Description 4
00
Binary
Description 5
04
Binary
Description 6
07
Binary
Description 7
00
Binary
Description 8
2F
Binary
Description 9
AD
Binary
Description 10
40
Binary
Description 11
02
Binary
Description 12
FA
Binary
Description 13
D4
Binary
Description 14
00
Binary
Description 15
Binary
2F
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
BIt 0
CRC EN
Address Map
Present
EEPROM > 256
Bytes
RES
RES
RES
RES
RES
0
0
0
0
0
0
0
0
RES
RES
RES
RES
RES
RES
RES
RES
0
0
0
0
0
0
0
0
Max EEPROM
Burst size[7]
Max EEPROM
Burst size[6]
Max EEPROM
Burst size[5]
Max EEPROM
Burst size[4]
Max EEPROM
Burst size[3]
Max EEPROM
Burst size[2]
Max EEPROM
Burst size[1]
Max EEPROM
Burst size[0]
0
0
0
1
0
0
0
0
PWDN_ch7
PWDN_ch6
PWDN_ch5
PWDN_ch4
PWDN_ch3
PWDN_ch2
PWDN_ch1
PWDN_ch0
0
0
0
0
0
0
0
0
RES
RES
RES
RES
Ovrd_RESET
RES
RES
RES
0
0
0
0
0
0
0
0
RES
RES
RES
RES
RES
rxdet_btb_en
RES
RES
0
0
0
0
0
1
0
0
RES
Ovrd_RX_DET
Ovrd_MODE
RES
RES
rx_delay_sel_2
rx_delay_sel_1
rx_delay_sel_0
0
0
0
0
0
1
1
1
RD_delay_sel_3
RD_delay_sel_2
RD_delay_sel_1
RD_delay_sel_0
RES
RES
ch0_RXDET_1
ch0_RXDET_0
0
0
0
0
0
0
0
0
ch0_BST_7
ch0_BST_6
ch0_BST_5
ch0_BST_4
ch0_BST_3
ch0_BST_2
ch0_BST_1
ch0_BST_0
0
0
1
0
1
1
1
1
ch0_RES
ch0_RES
ch0_RES_2
ch0_RES_1
ch0_RES_0
ch0_RES_2
ch0_RES_1
ch0_RES_0
1
0
1
0
1
1
0
1
ch0_RES_2
ch0_RES_1
ch0_RES_0
ch0_Slow
ch0_RES_1
ch0_RES_0
ch0_RES_1
ch0_RES_0
0
1
0
0
0
0
0
0
ch1_RES
ch1_RES
ch1_RXDET_1
ch1_RXDET_0
ch1_BST_7
ch1_BST_6
ch1_BST_5
ch1_BST_4
0
0
0
0
0
0
1
0
ch1_BST_3
ch1_BST_2
ch1_BST_1
ch1_BST_0
ch1_Sel_scp
ch1_Sel_MODE
ch1_RES_2
ch1_RES_1
1
1
1
1
1
0
1
0
ch1_RES_0
ch1_VOD_2
ch1_VOD_1
ch1_VOD_0
ch1_DEM_2
ch1_DEM_1
ch1_DEM_0
ch1_Slow
1
1
0
1
0
1
0
0
ch1_RES_1
ch1_RES_0
ch1_RES_1
ch1_RES_0
ch2_RES
ch2_RES
ch2_RXDET_1
ch2_RXDET_0
0
0
0
0
0
0
0
0
ch2_BST_7
ch2_BST_6
ch2_BST_5
ch2_BST_4
ch2_BST_3
ch2_BST_2
ch2_BST_1
ch2_BST_0
0
0
1
0
1
1
1
1
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Table 8. EEPROM Register Map With Default Value (continued)
EEPROM
Address
Byte
Description 16
HEX
AD
Binary
Description 17
40
Binary
Description 18
02
Binary
Description 19
FA
Binary
Description 20
D4
Binary
Description 21
01
Binary
Description 22
80
Binary
Description 23
5F
Binary
Description 24
5A
Binary
Description 25
80
Binary
Description 26
05
Binary
Description 27
F5
Binary
Description 28
A8
Binary
Description 29
00
Binary
Description 30
5F
Binary
Description 31
Binary
18
5A
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
BIt 0
ch2_RES
ch2_RES
ch2_RES_2
ch2_RES_1
ch2_RES_0
ch2_RES_2
ch2_RES_1
ch2_RES_0
1
0
1
0
1
1
0
1
ch2_RES_2
ch2_RES_1
ch2_RES_0
ch2_Slow
ch2_RES_1
ch2_RES_0
ch2_RES_1
ch2_RES_0
0
1
0
0
0
0
0
0
ch3_RES
ch3_RES
ch3_RXDET_1
ch3_RXDET_0
ch3_BST_7
ch3_BST_6
ch3_BST_5
ch3_BST_4
0
0
0
0
0
0
1
0
ch3_BST_3
ch3_BST_2
ch3_BST_1
ch3_BST_0
ch3_Sel_scp
ch3_Sel_MODE
ch3_RES_2
ch3_RES_1
1
1
1
1
1
0
1
0
ch3_RES_0
ch3_VOD_2
ch3_VOD_1
ch3_VOD_0
ch3_DEM_2
ch3_DEM_1
ch3_DEM_0
ch3_Slow
1
1
0
1
0
1
0
0
ch3_RES_1
ch3_RES_0
ch3_RES_1
ch3_RES_0
ovrd_fast_idle
en_h_idle_th_n
en_h_idle_th_s
en_fast_idle_n
0
0
0
0
0
0
0
1
en_fast_idle_s
eqsd_mgain_n
eqsd_mgain_s
ch4_RES
ch4_RES
ch4_RXDET_1
ch4_RXDET_0
ch4_BST_7
1
0
0
0
0
0
0
0
ch4_BST_6
ch4_BST_5
ch4_BST_4
ch4_BST_3
ch4_BST_2
ch4_BST_1
ch4_BST_0
ch4_Sel_scp
0
1
0
1
1
1
1
1
ch4_Sel_MODE
ch4_RES_2
ch4_RES_1
ch4_RES_0
ch4_VOD_2
ch4_VOD_1
ch4_VOD_0
ch4_DEM_2
0
1
0
1
1
0
1
0
ch4_DEM_1
ch4_DEM_0
ch4_Slow
ch4_RES_1
ch4_RES_0
ch4_RES_1
ch4_RES_0
ch5_RES
1
0
0
0
0
0
0
0
ch5_RES
ch5_RES
ch5_RES
ch5_RES
ch5_RES
ch5_RES
ch5_RES
ch5_RES
0
0
0
0
0
1
0
1
ch5_RES
ch5_RES
ch5_RES
ch5_Sel_scp
ch5_Sel_MODE
ch5_RES_2
ch5_RES_1
ch5_RES_0
1
1
1
1
0
1
0
1
ch5_VOD_2
ch5_VOD_1
ch5_VOD_0
ch5_DEM_2
ch5_DEM_1
ch5_DEM_0
ch5_Slow
ch5_RES_1
1
0
1
0
1
0
0
0
ch5_RES_0
ch5_RES_1
ch5_RES_0
ch6_RES
ch6_RES
ch6_RXDET_1
ch6_RXDET_0
ch6_BST_7
0
0
0
0
0
0
0
0
ch6_BST_6
ch6_BST_5
ch6_BST_4
ch6_BST_3
ch6_BST_2
ch6_BST_1
ch6_BST_0
ch6_Sel_scp
0
1
0
1
1
1
1
1
ch6_Sel_MODE
ch6_RES_2
ch6_RES_1
ch6_RES_0
ch6_VOD_2
ch6_VOD_1
ch6_VOD_0
ch6_DEM_2
0
1
0
1
1
0
1
0
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Table 8. EEPROM Register Map With Default Value (continued)
EEPROM
Address
Byte
Description 32
HEX
80
Binary
Description 33
05
Binary
Description 34
F5
Binary
Description 35
A8
Binary
Description 36
00
Binary
Description 37
00
Binary
Description 38
54
Binary
Description 39
Binary
54
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
BIt 0
ch6_DEM_1
ch6_DEM_0
ch6_Slow
ch6_RES_1
ch6_RES_0
ch6_RES_1
ch6_RES_0
ch7_RES
1
0
0
0
0
0
0
0
ch7_RES
ch7_RES
ch7_RES
ch7_RES
ch7_RES
ch7_RES
ch7_RES
ch7_RES
0
0
0
0
0
1
0
1
ch7_RES
ch7_RES
ch7_RES
ch7_Sel_scp
ch7_Sel_MODE
ch7_RES_2
ch7_RES_1
ch7_RES_0
1
1
1
1
0
1
0
1
ch7_VOD_2
ch7_VOD_1
ch7_VOD_0
ch7_DEM_2
ch7_DEM_1
ch7_DEM_0
ch7_Slow
ch7_RES_1
1
0
1
0
1
0
0
0
ch7_RES_0
ch7_RES_1
ch7_RES_0
iph_dac_ns_1
iph_dac_ns_0
ipp_dac_ns_1
ipp_dac_ns_0
ipp_dac_1
0
0
0
0
0
0
0
0
ipp_dac_0
RD23_67
RD01_45
RD_PD_ovrd
RD_Sel_test
RD_RESET_ovrd
PWDB_input_DC
DEM_VOD_ovrd
0
0
0
0
0
0
0
0
DEM_ovrd_N2
DEM_ovrd_N1
DEM_ovrd_N0
VOD_ovrd_N2
VOD_ovrd_N1
VOD_ovrd_N0
SPARE0
SPARE1
0
1
0
1
0
1
0
0
DEM__ovrd_S2
DEM__ovrd_S1
DEM_ovrd_S0
VOD_ovrd_S2
VOD_ovrd_S1
VOD_ovrd_S0
SPARE0
SPARE1
0
1
0
1
0
1
0
0
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Table 9. Example of EEPROM for Four Devices Using Two Address Maps
EEPROM Address
Address (Hex)
EEPROM Data
Comments
0
00
0x43
CRC_EN = 0, Address Map = 1, >256 bytes = 0, Device Count[3:0] = 3
1
01
0x00
2
02
0x08
EEPROM Burst Size
3
03
0x00
CRC not used
4
04
0x0B
Device 0 Address Location
5
05
0x00
CRC not used
6
06
0x0B
Device 1 Address Location
7
07
0x00
CRC not used
8
08
0x30
Device 2 Address Location
9
09
0x00
CRC not used
10
0A
0x30
Device 3 Address Location
11
0B
0x00
Begin Device 0, 1 - Address Offset 3
12
0C
0x00
13
0D
0x04
14
0E
0x07
15
0F
0x00
16
10
0x00
EQ CHB0 = 00
17
11
0xAB
VOD CHB0 = 1.0V
18
12
0x00
DEM CHB0 = 0 (0dB)
19
13
0x00
EQ CHB1 = 00
20
14
0x0A
VOD CHB1 = 1.0V
21
15
0xB0
DEM CHB1 = 0 (0dB)
22
16
0x00
23
17
0x00
EQ CHB2 = 00
24
18
0xAB
VOD CHB2 = 1.0V
25
19
0x00
DEM CHB2 = 0 (0dB)
26
1A
0x00
EQ CHB3 = 00
27
1B
0x0A
VOD CHB3 = 1.0V
28
1C
0xB0
DEM CHB3 = 0 (0dB)
29
1D
0x01
30
1E
0x80
31
1F
0x01
EQ CHA0 = 00
32
20
0x56
VOD CHA0 = 1.0V
33
21
0x00
DEM CHA0 = 0 (0dB)
34
22
0x00
EQ CHA1 = 00
35
23
0x15
VOD CHA1 = 1.0V
36
24
0x60
DEM CHA1 = 0 (0dB)
37
25
0x00
38
26
0x01
EQ CHA2 = 00
39
27
0x56
VOD CHA2 = 1.0V
40
28
0x00
DEM CHA2 = 0 (0dB)
41
29
0x00
EQ CHA3 = 00
42
2A
0x15
VOD CHA3 = 1.0V
43
2B
0x60
DEM CHA3 = 0 (0dB)
44
2C
0x00
45
2D
0x00
46
2E
0x54
20
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Table 9. Example of EEPROM for Four Devices Using Two Address Maps (continued)
EEPROM Address
Address (Hex)
EEPROM Data
47
2F
0x54
End Device 0, 1 - Address Offset 39
Comments
48
30
0x00
Begin Device 2, 3 - Address Offset 3
49
31
0x00
50
32
0x04
51
33
0x07
52
34
0x00
53
35
0x00
EQ CHB0 = 00
54
36
0xAB
VOD CHB0 = 1.0V
55
37
0x00
DEM CHB0 = 0 (0dB)
56
38
0x00
EQ CHB1 = 00
57
39
0x0A
VOD CHB1 = 1.0V
58
3A
0xB0
DEM CHB1 = 0 (0dB)
59
3B
0x00
60
3C
0x00
EQ CHB2 = 00
61
3D
0xAB
VOD CHB2 = 1.0V
62
3E
0x00
DEM CHB2 = 0 (0dB)
63
3F
0x00
EQ CHB3 = 00
64
40
0x0A
VOD CHB3 = 1.0V
65
41
0xB0
DEM CHB3 = 0 (0dB)
66
42
0x01
67
43
0x80
68
44
0x01
EQ CHA0 = 00
69
45
0x56
VOD CHA0 = 1.0V
70
46
0x00
DEM CHA0 = 0 (0dB)
71
47
0x00
EQ CHA1 = 00
72
48
0x15
VOD CHA1 = 1.0V
73
49
0x60
DEM CHA1 = 0 (0dB)
74
4A
0x00
75
4B
0x01
EQ CHA2 = 00
76
4C
0x56
VOD CHA2 = 1.0V
77
4D
0x00
DEM CHA2 = 0 (0dB)
78
4E
0x00
EQ CHA3 = 00
79
4F
0x15
VOD CHA3 = 1.0V
80
50
0x60
DEM CHA3 = 0 (0dB)
81
51
0x00
82
52
0x00
83
53
0x54
84
54
0x54
End Device 2, 3 - Address Offset 39
Note: CRC_EN = 0, Address Map = 1, >256 byte = 0, Device Count[3:0] = 3. This example has all channels set
to EQ = 00 (min boost), VOD = 1.0V, DEM = 0 (0dB) and multiple device can point to the same address map.
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System Management Bus (SMBus) and Configuration Registers
The System Management Bus interface is compatible to SMBus 2.0 physical layer specification. ENSMB = 1kΩ
to VDD to enable SMBus slave mode and allow access to the configuration registers.
The DS125MB203 has the AD[3:0] inputs in SMBus mode. These pins are the user set SMBUS slave address
inputs. The AD[3:0] pins have internal pull-down. When left floating or pulled low the AD[3:0] = 0000'b, the device
default address byte is B0'h. Based on the SMBus 2.0 specification, the DS125MB203 has a 7-bit slave address.
The LSB is set to 0'b (for a WRITE). The device supports up to 16 address byte, which can be set with the
AD[3:0] inputs. Below are the 16 addresses.
Table 10.
AD[3:0] Settings
Address Bytes (HEX)
0000
B0
0001
B2
0010
B4
0011
B6
0100
B8
0101
BA
0110
BC
0111
BE
1000
C0
1001
C2
1010
C4
1011
C6
1100
C8
1101
CA
1110
CC
1111
CE
The SDA, SCL pins are 3.3V tolerant, but are not 5V tolerant. External pull-up resistor is required on the SDA.
The resistor value can be from 1 kΩ to 5 kΩ depending on the voltage, loading and speed. The SCL may also
require an external pull-up resistor and it depends on the Host that drives the bus.
TRANSFER OF DATA VIA THE SMBus
During normal operation the data on SDA must be stable during the time when SCL is High.
There are three unique states for the SMBus:
START: A High-to-Low transition on SDA while SCL is High indicates a message START condition.
STOP: A Low-to-High transition on SDA while SCL is High indicates a message STOP condition.
IDLE: If SCL and SDA are both High for a time exceeding tBUF from the last detected STOP condition or if they
are High for a total exceeding the maximum specification for tHIGH then the bus will transfer to the IDLE state.
22
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SMBus TRANSACTIONS
The device supports WRITE and READ transactions. See Table 11 for register address, type (Read/Write, Read
Only), default value and function information.
WRITING A REGISTER
To
1.
2.
3.
4.
5.
6.
7.
write a register, the following protocol is used (see SMBus 2.0 specification).
The Host drives a START condition, the 7-bit SMBus address, and a “0” indicating a WRITE.
The Device (Slave) drives the ACK bit (“0”).
The Host drives the 8-bit Register Address.
The Device drives an ACK bit (“0”).
The Host drive the 8-bit data byte.
The Device drives an ACK bit (“0”).
The Host drives a STOP condition.
The WRITE transaction is completed, the bus goes IDLE and communication with other SMBus devices may
now occur.
READING A REGISTER
To read a register, the following protocol is used (see SMBus 2.0 specification).
1. The Host drives a START condition, the 7-bit SMBus address, and a “0” indicating a WRITE.
2. The Device (Slave) drives the ACK bit (“0”).
3. The Host drives the 8-bit Register Address.
4. The Device drives an ACK bit (“0”).
5. The Host drives a START condition.
6. The Host drives the 7-bit SMBus Address, and a “1” indicating a READ.
7. The Device drives an ACK bit “0”.
8. The Device drives the 8-bit data value (register contents).
9. The Host drives a NACK bit “1”indicating end of the READ transfer.
10. The Host drives a STOP condition.
The READ transaction is completed, the bus goes IDLE and communication with other SMBus devices may now
occur.
See Table 11 for more information.
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Table 11. SMBUS Slave Mode Register Map
Address
0x00
Register Name
Observation
Bit(s)
Field
Type
Default
0x00
Description
7
Reserved
R/W
Set bit to 0.
6:3
Address Bit
AD[3:0]
R
Observation of AD[3:0] bit
[6]: AD3
[5]: AD2
[4]: AD1
[3]: AD0
2
EEPROM Read
Done
R
1: Device completed the read from external EEPROM.
1
Reserved
R/W
Set bit to 0.
0
Reserved
R/W
0x01
PWDN Channels
7:0
PWDN CHx
R/W
0x00
Power Down per Channel
[7]: CH7 (NC – S_OUTB1)
[6]: CH6 (D_IN1 – S_OUTA1)
[5]: CH5 (NC – S_OUTB0)
[4]: CH4 (D_IN0 – S_OUTA0)
[3]: CH3 (D_OUT1 – S_INB1)
[2]: CH2 (NC – S_INA1)
[1]: CH1 (D_OUT0 – S_INB0)
[0]: CH0 (NC – S_INA0)
00'h = all channels enabled
FF'h = all channels disabled; device in low power state
Note: override RESET pin in Reg_02.
0x02
Override
RESET Control
7:1
Reserved
R/W
0x00
Set bits to 0.
0
Override RESET
0x05
Slave Mode CRC
Bits
7:0
CRC bits
R/W
0x00
CRC bits [7:0]
0x06
Slave Register
Control
7:5
Reserved
R/W
0x10
Set bits to 0.
4
Reserved
Set bit to 1.
3
Register Enable
1: Enables high speed channel control via SMBus
registers without CRC
0: Channel control via SMBus registers requires correct
CRC in Reg 0x05
Note: In order to change VOD, DEM and EQ of the
channels in slave mode without also setting CRC each
time, set this bit to 1.
2:0
Reserved
7
Reserved
6
Reset Registers
Self clearing reset for SMBus registers. Writing a [1] will
return register settings to default values
5
Reset SMBus
Master
Self clearing reset to SMBus master state machine
4:0
Reserved
7:4
Reserved
3
Override RXDET
1: Block RXDET control; use register to configure.
0: Allow RXDET control.
2
Override MODE
1: Block MODE pin control; use register to configure.
0: Allow MODE pin control
0x07
0x08
Digital Reset and
Control
Override RXDET,
MODE
1:0
24
Set bit to 0.
1: Block RESET pin control; use Reg_01 to configure.
0: Allow RESET pin control.
Set bits to 0.
R/W
0x01
Set bit to 0.
Set bits to 0 0001'b.
R/W
0x00
Set bits to 0.
Set bits to 0.
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Table 11. SMBUS Slave Mode Register Map (continued)
Address
0x0E
Register Name
CH0 - S_INA0
RXDET
Bit(s)
Field
7:4
Reserved
3:2
RXDET
Type
R/W
Default
0x00
Description
Set bits to 0.
00: Input is high-z impedance
01: Auto RX-Detect,
outputs test every 12 ms for 600 ms (50 times) then
stops; termination is high-z until detection; once
detected input termination is 50 Ω
10: Auto RX-Detect,
outputs test every 12 ms until detection occurs;
termination is high-z until detection; once detected
input termination is 50 Ω
11: Input is 50 Ω
Note: override RXDET control in Reg_08.
1:0
Reserved
0x0F
CH0 - S_INA0
EQ
7:0
EQ Control
R/W
0x2F
Set bits to 0.
0x10
Reserved
7:0
Reserved
R/W
0xAD
0x11
Reserved
7:0
Reserved
R/W
0x02
0x12
Reserved
7:0
Reserved
R/W
0x00
0x15
CH1 - S_INB0
RXDET
7:4
Reserved
R/W
0x00
3:2
RXDET
00: Input is high-z impedance
01: Auto RX-Detect,
outputs test every 12 ms for 600 ms (50 times) then
stops; termination is high-z until detection; once
detected input termination is 50 Ω
10: Auto RX-Detect,
outputs test every 12 ms until detection occurs;
termination is high-z until detection; once detected
input termination is 50 Ω
11: Input is 50 Ω
Note: override RXDET control in Reg_08.
1:0
Reserved
Set bits to 0.
EQ Control - total of 256 levels.
See Table 2.
Set bits to 0.
0x16
CH1 - S_INB0
EQ
7:0
EQ Control
R/W
0x2F
EQ Control - total of 256 levels.
See Table 2.
0x17
CH1 - D_OUT0
VOD
7
Short Circuit
Protection
R/W
0xAD
1: Enable the short circuit protection
0: Disable the short circuit protection
6
MODE Control
1: PCIe GEN 1/2, 10GE
0: PCIe GEN-3, 10G-KR
Note: override the MODE pin in Reg_08.
5:3
Reserved
Set bits to default value - 101.
2:0
VOD Control
VOD Control
000: 0.6 V
001: 0.7 V
010: 0.8 V
011: 0.9 V
100: 1.0 V
101: 1.1 V (default)
110: 1.2 V
111: 1.3 V
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Table 11. SMBUS Slave Mode Register Map (continued)
Address
0x18
Register Name
CH1 - D_OUT0
DEM
Bit(s)
Field
Type
Default
0x02
Description
7
RXDET STATUS
R
Observation bit for RXDET CH1 - CHB1.
1: RX = detected
0: RX = not detected
6:5
MODE STATUS
R
Observation bit for MODE.
4:3
Reserved
R/W
Set bits to 0.
2:0
DEM Control
R/W
DEM Control
000: 0 dB
001: –1.5 dB
010: –3.5 dB (default)
011: –5 dB
100: –6 dB
101: –8 dB
110: –9 dB
111: –12 dB
0x19
Reserved
7:0
Reserved
R/W
0x00
Set bits to 0.
0x1C
CH2 - S_INA1
RXDET
7:4
Reserved
R/W
0x00
Set bits to 0.
3:2
RXDET
00: Input is high-z impedance
01: Auto RX-Detect,
outputs test every 12 ms for 600 ms (50 times) then
stops; termination is high-z until detection; once
detected input termination is 50 Ω
10: Auto RX-Detect,
outputs test every 12 ms until detection occurs;
termination is high-z until detection; once detected
input termination is 50 Ω
11: Input is 50 Ω
Note: override RXDET control in Reg_08.
1:0
Set bits to 0.
0x1D
CH2 - S_INA1
EQ
7:0
EQ Control
R/W
0x2F
0x1E
Reserved
7:0
Reserved
R/W
0xAD
0x1F
Reserved
7:0
Reserved
R/W
0x02
0x20
Reserved
7:0
Reserved
R/W
0x00
0x23
CH3 - S_INB1
RXDET
7:4
Reserved
R/W
0x00
3:2
RXDET
00: Input is high-z impedance
01: Auto RX-Detect,
outputs test every 12 ms for 600 ms (50 times) then
stops; termination is high-z until detection; once
detected input termination is 50 Ω
10: Auto RX-Detect,
outputs test every 12 ms until detection occurs;
termination is high-z until detection; once detected
input termination is 50 Ω
11: Input is 50 Ω
Note: override RXDET control in Reg_08.
1:0
Reserved
Set bits to 0.
7:0
EQ Control
0x24
26
CH3 - S_INB1
EQ
R/W
0x2F
EQ Control - total of 256 levels.
See Table 2.
Set bits to 0.
EQ Control - total of 256 levels.
See Table 2.
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Table 11. SMBUS Slave Mode Register Map (continued)
Address
0x25
0x26
Register Name
CH3 - D_OUT1
VOD
CH3 - D_OUT1
DEM
Bit(s)
Field
Type
R/W
Default
0xAD
Description
7
Short Circuit
Protection
6
MODE Control
1: PCIe GEN 1/2, 10GE
0: PCIe GEN 3, 10G-KR
Note: override the MODE pin in Reg_08.
5:3
Reserved
Set bits to default value - 101.
2:0
VOD Control
VOD Control
000: 0.6 V
001: 0.7 V
010: 0.8 V
011: 0.9 V
100: 1.0 V
101: 1.1 V (default)
110: 1.2 V
111: 1.3 V
7
RXDET STATUS
R
6:5
MODE STATUS
R
Observation bit for MODE.
4:3
Reserved
R/W
Set bits to 0.
2:0
DEM Control
R/W
DEM Control
000: 0 dB
001: –1.5 dB
010: –3.5 dB (default)
011: –5 dB
100: –6 dB
101: –8 dB
110: –9 dB
111: –12 dB
0x02
1: Enable the short circuit protection
0: Disable the short circuit protection
Observation bit for RXDET CH1 - CHB1.
1: RX = detected
0: RX = not detected
0x27
Reserved
7:0
Reserved
R/W
0x00
Set bits to 0.
0x2B
CH4 - D_IN0
RXDET
7:4
Reserved
R/W
0x00
Set bits to 0.
3:2
RXDET
00: Input is high-z impedance
01: Auto RX-Detect,
outputs test every 12 ms for 600 ms (50 times) then
stops; termination is high-z until detection; once
detected input termination is 50 Ω
10: Auto RX-Detect,
outputs test every 12 ms until detection occurs;
termination is high-z until detection; once detected
input termination is 50 Ω
11: Input is 50 Ω
Note: override RXDET control in Reg_08.
1:0
Reserved
0x2C
CH4 - D_IN0
EQ
7:0
EQ Control
R/W
0x2F
Set bits to 0.
EQ Control - total of 256 levels.
See Table 2.
0x2D
CH4 - S_OUTA0
VOD
7
Short Circuit
Protection
R/W
0xAD
1: Enable the short circuit protection
0: Disable the short circuit protection
6
MODE Control
1: PCIe GEN 1/2, 10GE
0: PCIe GEN 3, 10G-KR
Note: override the MODE pin in Reg_08.
5:3
Reserved
Set bits to default value - 101.
2:0
VOD Control
VOD Control
000: 0.6 V
001: 0.7 V
010: 0.8 V
011: 0.9 V
100: 1.0 V
101: 1.1 V (default)
110: 1.2 V
111: 1.3 V
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Table 11. SMBUS Slave Mode Register Map (continued)
Address
0x2E
Register Name
CH4 - S_OUTA0
DEM
Bit(s)
Field
Type
Default
0x02
Description
7
RXDET STATUS
R
Observation bit for RXDET.
1: RX = detected
0: RX = not detected
6:5
MODE STATUS
R
Observation bit for MODE.
4:3
Reserved
R/W
Set bits to 0.
2:0
DEM Control
R/W
DEM Control
000: 0 dB
001: –1.5 dB
010: –3.5 dB (default)
011: –5 dB
100: –6 dB
101: –8 dB
110: –9 dB
111: –12 dB
0x2F
Reserved
7:0
Reserved
R/W
0x00
Set bits to 0.
0x32
Reserved
7:0
Reserved
R/W
0x00
Set bits to 0.
0x33
Reserved
7:0
Reserved
R/W
0x2F
0x34
CH5 - S_OUTB0
VOD
7
Short Circuit
Protection
R/W
0xAD
6
MODE Control
1: PCIe GEN 1/2, 10GE
0: PCIe GEN 3, 10G-KR
Note: override the MODE pin in Reg_08.
5:3
Reserved
Set bits to default value - 101.
2:0
VOD Control
VOD Control
000: 0.6 V
001: 0.7 V
010: 0.8 V
011: 0.9 V
100: 1.0 V
101: 1.1 V (default)
110: 1.2 V
111: 1.3 V
7
RXDET STATUS
R
6:5
MODE STATUS
R
Observation bit for MODE.
4:3
Reserved
R/W
Set bits to 0.
2:0
DEM Control
R/W
DEM Control
000: 0 dB
001: –1.5 dB
010: –3.5 dB (default)
011: –5 dB
100: –6 dB
101: –8 dB
110: –9 dB
111: –12 dB
0x35
CH5 - S_OUTB0
DEM
0x02
1: Enable the short circuit protection
0: Disable the short circuit protection
Observation bit for RXDET.
1: RX = detected
0: RX = not detected
0x36
Reserved
7:0
Reserved
R/W
0x00
Set bits to 0.
0x39
CH6 - D_IN1
RXDET
7:4
Reserved
R/W
0x00
Set bits to 0.
3:2
RXDET
00: Input is high-z impedance
01: Auto RX-Detect,
outputs test every 12 ms for 600 ms (50 times) then
stops; termination is high-z until detection; once
detected input termination is 50 Ω
10: Auto RX-Detect,
outputs test every 12 ms until detection occurs;
termination is high-z until detection; once detected
input termination is 50 Ω
11: Input is 50 Ω
Note: override RXDET control in Reg_08.
1:0
Reserved
Set bits to 0.
28
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Table 11. SMBUS Slave Mode Register Map (continued)
Address
Register Name
Bit(s)
Field
Type
Default
Description
0x3A
CH6 - D_IN1
EQ
7:0
EQ Control
R/W
0x2F
EQ Control - total of 256 levels.
See Table 2.
0x3B
CH6 - S_OUTA1
VOD
7
Short Circuit
Protection
R/W
0xAD
1: Enable the short circuit protection
0: Disable the short circuit protection
6
MODE Control
1: PCIe GEN 1/2, 10GE
0: PCIe GEN 3, 10G-KR
Note: override the MODE pin in Reg_08.
5:3
Reserved
Set bits to default value - 101.
2:0
VOD Control
VOD Control
000: 0.6 V
001: 0.7 V
010: 0.8 V
011: 0.9 V
100: 1.0 V
101: 1.1 V (default)
110: 1.2 V
111: 1.3 V
7
RXDET STATUS
R
6:5
MODE STATUS
R
Observation bit for MODE.
4:3
Reserved
R/W
Set bits to 0.
2:0
DEM Control
R/W
DEM Control
000: 0 dB
001: –1.5 dB
010: –3.5 dB (default)
011: –5 dB
100: –6 dB
101: –8 dB
110: –9 dB
111: –12 dB
0x3C
CH6 - S_OUTA1
DEM
0x02
Observation bit for RXDET.
1: RX = detected
0: RX = not detected
0x3D
Reserved
7:0
Reserved
R/W
0x00
Set bits to 0.
0x40
Reserved
7:0
Reserved
R/W
0x00
Set bits to 0.
0x41
Reserved
7:0
Reserved
R/W
0x2F
EQ Control - total of 256 levels.
See Table 2.
0x42
CH7 - S_OUTB1
VOD
7
Short Circuit
Protection
R/W
0xAD
1: Enable the short circuit protection
0: Disable the short circuit protection
6
MODE Control
1: PCIe GEN 1/2, 10GE
0: PCIe GEN 3, 10G-KR
Note: override the MODE pin in Reg_08.
5:3
Reserved
Set bits to default value - 101.
2:0
VOD Control
VOD Control
000: 0.6 V
001: 0.7 V
010: 0.8 V
011: 0.9 V
100: 1.0 V
101: 1.1 V (default)
110: 1.2 V
111: 1.3 V
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Table 11. SMBUS Slave Mode Register Map (continued)
Address
0x43
Register Name
CH7 - S_OUTB1
DEM
Bit(s)
Field
Type
Default
0x02
Description
7
RXDET STATUS
R
Observation bit for RXDET.
CH7 - CHA3.
1: RX = detected
0: RX = not detected
6:5
MODE STATUS
R
Observation bit for MODE.
4:3
Reserved
R/W
Set bits to 0.
2:0
DEM Control
R/W
DEM Control
000: 0 dB
001: –1.5 dB
010: –3.5 dB (default)
011: –5 dB
100: –6 dB
101: –8 dB
110: –9 dB
111: –12 dB
0x44
Reserved
7:4
Reserved
R/W
0x00
Set bits to 0.
0x51
Device ID
7:5
VERSION
R
0x46
010'b
4:0
ID
7:3
Reserved
R/W
0x00
2
Override SEL1 pin
1: Block SEL1 pin control;
use Reg_5F to configure.
0: Allow SEL1 pin control
1
Override SEL0 pin
1: Block SEL0 pin control;
use Reg_5F to configure.
0: Allow SEL0 pin control
0
Override INPUT_EN
pin
1: Block INPUT_EN pin control;
use Reg_5F to configure.
0: Allow INPUT_EN pin control
0x5E
0x5F
30
Override SEL1,
SEL0 and
INPUT_EN
00110'b
R/W
0x00
Set bits to 0.
Control SEL1, SEL0 7:6
and INPUT_ENl
SEL1 Control
Select for Lane 1.
00: 0 - selects input S_INB1+/-,
output S_OUTB1+/-.
01: 20kΩ to GND - selects input S_INB1+/-,
output S_OUTA1+/10: FLOAT - selects input S_INA1+/-,
output S_OUTB1+/11: 1 - selects input S_INA1+/-,
output S_OUTA1+/-.
5:4
SEL0 Control
Select for Lane 0.
00: 0 - selects input S_INB0+/-,
output S_OUTB0+/-.
01: 20kΩ to GND - selects input S_INB0+/-,
output S_OUTA0+/10: FLOAT - selects input S_INA0+/-,
output S_OUTB0+/11: 1 - selects input S_INA0+/-,
output S_OUTA0+/-.
3:2
INPUT_EN Control
00: 0 - Normal Operation, FANOUT is disabled, use
SEL0/1 to select the A or B input/output (see SEL0/1
pin), input always enabled with 50 ohms.
01: 20kΩ to GND - Reserved.
10: FLOAT - AUTO - Use RX Detect, SEL0/1 to
determine which input or output to enable, FANOUT is
disable.
11: 1 - Normal Operation, FANOUT is enabled (both
S_OUT0/1 are ON). Input always enabled with 50
ohms.
1:0
Reserved
Set bits to 0.
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APPLICATIONS INFORMATION
GENERAL RECOMMENDATIONS
The DS125MB203 is a high performance circuit capable of delivering excellent performance. Careful attention
must be paid to the details associated with high-speed design as well as providing a clean power supply. Refer
to the information below and Revision 4 of the LVDS Owner's Manual for more detailed information on high
speed design tips to address signal integrity design issues.
PCB LAYOUT CONSIDERATIONS FOR DIFFERENTIAL PAIRS
The CML inputs and LPDS outputs have been optimized to work with interconnects using a controlled differential
impedance of 85 - 100Ω. It is preferable to route differential lines exclusively on one layer of the board,
particularly for the input traces. The use of vias should be avoided if possible. If vias must be used, they should
be used sparingly and must be placed symmetrically for each side of a given differential pair. Whenever
differential vias are used the layout must also provide for a low inductance path for the return currents as well.
Route the differential signals away from other signals and noise sources on the printed circuit board. See AN1187(SNOA401) for additional information on QFN (WQFN) packages.
20 mils
EXTERNAL MICROSTRIP
100 mils
20 mils
INTERNAL STRIPLINE
VDD
VDD
18 17 16 15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
19
54
20
53
21
52
51
22
BOTTOM OF PKG
23
VDD
50
GND
24
49
25
48
26
47
27
46
28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45
VDD
VDD
Figure 7. Typical Routing Options
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The graphic shown above depicts different transmission line topologies which can be used in various
combinations to achieve the optimal system performance. Impedance discontinuities at the differential via can be
minimized or eliminated by increasing the swell around each hole and providing for a low inductance return
current path. When the via structure is associated with thick backplane PCB, further optimization such as back
drilling is often used to reduce the deterimential high frequency effects of stubs on the signal path.
POWER SUPPLY BYPASSING
Two approaches are recommended to ensure that the DS125MB203 is provided with an adequate power supply.
First, the supply (VDD) and ground (GND) pins should be connected to power planes routed on adjacent layers
of the printed circuit board. The layer thickness of the dielectric should be minimized so that the VDD and GND
planes create a low inductance supply with distributed capacitance. Second, careful attention to supply
bypassing through the proper use of bypass capacitors is required. A 0.1 μF bypass capacitor should be
connected to each VDD pin such that the capacitor is placed as close as possible to the DS125MB203. Smaller
body size capacitors can help facilitate proper component placement. Additionally, capacitor with capacitance in
the range of 1 μF to 10 μF should be incorporated in the power supply bypassing design as well. These
capacitors can be either tantalum or an ultra-low ESR ceramic.
32
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Typical Performance Curves Characteristics
1021
1020
T = 25°C
VDD = 2.5 V
1019
VOD (mVp-p)
VOD (mVp-p)
1018
1016
1013
1016
1014
1010
1007
2.375
2.5
1012
- 40
2.625
-15
10
35
60
85
TEMPERATURE (°C)
VDD (V)
Figure 8. Output Differential Voltage (VOD = 1.0 Vp-p) vs.
Supply Voltage (VDD)
Figure 9. Output Differential Voltage (VOD = 1.0 Vp-p) vs.
Temperature
Typical Performance Eye Diagrams Characteristics
Pattern
Generator
VID = 1.0 Vp-p,
DE = 0 dB
PRBS15
TL
Lossy Channel
IN
DS125MB203
OUT
Scope
BW = 60 GHz
Figure 10. Test Setup Connections Diagram
Figure 11. TL = 10 inch 5–mil FR4 trace, 5 Gbps
DS125MB203 settings: EQ[1:0] = 0, F = 02'h, DEM[1:0] = 0, 1
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Typical Performance Eye Diagrams Characteristics (continued)
Figure 12. TL = 10 inch 5–mil FR4 trace, 8 Gbps
DS125MB203 settings: EQ[1:0] = 0, F = 02'h, DEM[1:0] = 0, 1
Figure 13. TL = 10 inch 5–mil FR4 trace, 12 Gbps
DS125MB203 settings: EQ[1:0] = 0, R = 01'h, DEM[1:0] = 0, 1
34
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Typical Performance Eye Diagrams Characteristics (continued)
Figure 14. TL = 20 inch 5–mil FR4 trace, 5 Gbps
DS125MB203 settings: EQ[1:0] = 0, 1 = 03'h, DEM[1:0] = 0, 1
Figure 15. TL = 20 inch 5–mil FR4 trace, 8 Gbps
DS125MB203 settings: EQ[1:0] = 0, 1 = 03'h, DEM[1:0] = 0, 1
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Typical Performance Eye Diagrams Characteristics (continued)
Figure 16. TL = 20 inch 5–mil FR4 trace, 12 Gbps
DS125MB203 settings: EQ[1:0] = 0, 1 = 03'h, DEM[1:0] = 0, 1
Figure 17. TL = 30 inch 5–mil FR4 trace, 5 Gbps
DS125MB203 settings: EQ[1:0] = R, 0 = 07'h, DEM[1:0] = 0, 1
36
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Typical Performance Eye Diagrams Characteristics (continued)
Figure 18. TL = 30 inch 5–mil FR4 trace, 8 Gbps
DS125MB203 settings: EQ[1:0] = R, 0 = 07'h, DEM[1:0] = 0, 1
Figure 19. TL = 30 inch 5–mil FR4 trace, 12 Gbps
DS125MB203 settings: EQ[1:0] = R, 0 = 07'h, DEM[1:0] = 0, 1
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Typical Performance Eye Diagrams Characteristics (continued)
Figure 20. TL1 = 5-meter 30-AWG 100 Ohm Twin-axial Cable, 12 Gbps
DS125MB203 settings: EQ[1:0] = R, 0 = 07'h, DEM[1:0] = 0, 1
Figure 21. TL1 = 8-meter 30-AWG 100 Ohm Twin-axial Cable, 12 Gbps
DS125MB203 settings: EQ[1:0] = R, 1 = 0F'h, DEM[1:0] = 0, 1
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Typical Performance Eye Diagrams Characteristics (continued)
Pattern
Generator
VID = 1.0 Vp-p,
DE = 0 dB
PRBS15
TL1
Lossy Channel
IN
DS125MB203
OUT
TL2
Lossy Channel
Scope
BW = 60 GHz
Figure 22. Test Setup Connections Diagram
Figure 23. TL1 = 20 inch 5–mil FR4 trace, TL2 = 10 inch 5–mil FR4 trace, 5 Gbps
DS125MB203 settings: EQ[1:0] = 0, 1 = 03'h, DEM[1:0] = R, 0
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Typical Performance Eye Diagrams Characteristics (continued)
Figure 24. TL1 = 20 inch 5–mil FR4 trace, TL2 = 10 inch 5–mil FR4 trace, 8 Gbps
DS125MB203 settings: EQ[1:0] = R, 1 = 03'h, DEM[1:0] = R, 0
Figure 25. TL1 = 20 inch 5–mil FR4 trace, TL2 = 10 inch 5-mil FR4 trace, 12 Gbps
DS125MB203 settings: EQ[1:0] = R, 1 = 03'h, DEM[1:0] = R, 0
40
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REVISION HISTORY
Changes from Revision A (April 2013) to Revision B
•
Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 40
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PACKAGE OPTION ADDENDUM
www.ti.com
16-Apr-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
(4)
DS125MB203SQ/NOPB
ACTIVE
WQFN
NJY
54
2000
Green (RoHS
& no Sb/Br)
CU SN
Level-2-260C-1 YEAR
DS125MB203
DS125MB203SQE/NOPB
ACTIVE
WQFN
NJY
54
250
Green (RoHS
& no Sb/Br)
CU SN
Level-2-260C-1 YEAR
DS125MB203
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
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provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
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Addendum-Page 1
Samples
PACKAGE MATERIALS INFORMATION
www.ti.com
24-Apr-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
DS125MB203SQ/NOPB
WQFN
NJY
54
2000
330.0
16.4
5.8
10.3
1.0
12.0
16.0
Q1
DS125MB203SQE/NOPB
WQFN
NJY
54
250
178.0
16.4
5.8
10.3
1.0
12.0
16.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
24-Apr-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
DS125MB203SQ/NOPB
WQFN
NJY
54
2000
367.0
367.0
38.0
DS125MB203SQE/NOPB
WQFN
NJY
54
250
213.0
191.0
55.0
Pack Materials-Page 2
PACKAGE OUTLINE
NJY0054A
WQFN
SCALE 2.000
WQFN
5.6
5.4
B
A
PIN 1 INDEX AREA
0.5
0.3
0.3
0.2
10.1
9.9
DETAIL
OPTIONAL TERMINAL
TYPICAL
0.8 MAX
C
SEATING PLANE
2X 4
SEE TERMINAL
DETAIL
3.51±0.1
19
(0.1)
27
28
18
50X 0.5
7.5±0.1
2X
8.5
1
45
54
PIN 1 ID
(OPTIONAL)
46
54X
54X
0.5
0.3
0.3
0.2
0.1
0.05
C A
C
B
4214993/A 07/2013
NOTES:
1. All linear dimensions are in millimeters. Dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
www.ti.com
EXAMPLE BOARD LAYOUT
NJY0054A
WQFN
WQFN
(3.51)
SYMM
54X (0.6)
54
54X (0.25)
SEE DETAILS
46
1
45
50X (0.5)
(7.5)
SYMM
(9.8)
(1.17)
TYP
2X
(1.16)
28
18
( 0.2) TYP
VIA
19
27
(1) TYP
(5.3)
LAND PATTERN EXAMPLE
SCALE:8X
0.07 MIN
ALL AROUND
0.07 MAX
ALL AROUND
METAL
SOLDER MASK
OPENING
SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
(PREFERRED)
METAL
SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4214993/A 07/2013
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, refer to QFN/SON PCB application note
in literature No. SLUA271 (www.ti.com/lit/slua271).
www.ti.com
EXAMPLE STENCIL DESIGN
NJY0054A
WQFN
WQFN
SYMM
METAL
TYP
(0.855) TYP
46
54
54X (0.6)
54X (0.25)
1
45
50X (0.5)
(1.17)
TYP
SYMM
(9.8)
12X (0.97)
18
28
19
27
12X (1.51)
(5.3)
SOLDERPASTE EXAMPLE
BASED ON 0.125mm THICK STENCIL
EXPOSED PAD
67% PRINTED SOLDER COVERAGE BY AREA
SCALE:10X
4214993/A 07/2013
NOTES: (continued)
5. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
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