TOSHIBA TK80F08K3

TK80F08K3
TOSHIBA Field Effect Transistor
Silicon N Channel MOS Type (U-MOSIV)
TK80F08K3
Swiching Regulator
•
Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
10.0 ± 0.3
9.5 ± 0.2
Absolute Maximum Ratings (Ta = 25°C)
0.4 ± 0.1
1.1
Symbol
Rating
Unit
0.76 ± 0.1
1.4 ± 0.1
2.35 ± 0.1
Drain-source voltage
VDSS
75
V
2.54 ± 0.25
2.34 ± 0.25
Drain-gate voltage (RGS = 20 kΩ)
VDGR
75
V
Gate-source voltage
VGSS
±20
V
ID
80
Pulse
(Note 1)
IDP
320
Drain power dissipation (Tc = 25°C)
PD
300
W
Single pulse avalanche energy
(Note 2)
EAS
250
mJ
Avalanche current
IAR
80
A
Repetitive avalanche energy (Note 3)
EAR
30
mJ
Channel temperature
(Note 4)
Tch
175
°C
Storage temperature range
(Note 4)
Tstg
−55 to 175
°C
0.4 ± 0.1
3.5 ± 0.2
2.76
(Note 1)
2 3
0.1 ± 0.1
DC
Drain current
1
A
1.GATE
1.2.DRAIN
GATE
2. DRAIN
(HEAT SINK）
SINK)
（HEAT
3.3. SOURCE
SOURSE
6.8
Characteristics
3.0 ± 0.2
Low leakage current: IDSS = 10 μA (max) (VDS = 75 V)
1.6
•
Unit: mm
1.0 ± 0.3
Low drain-source ON-resistance: RDS (ON) = 3.4 mΩ (typ.)
10.0 ± 0.3
•
8.0
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-10W1A
Weight: 1.07 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Symbol
Max
Unit
Rth (ch-c)
0.5
°C/W
2
1
Note 1: Please use devices on condition that the channel temperature
is below 175°C.
Note 2: VDD = 25 V, Tch = 25°C, L = 58 μH, RG = 1 Ω, IAR = 80 A
3
Note 3: Repetitive rating; pulse width limited by maximum channel
temperature.
Note 4: 175°C refers to AEC-Q101.
Note 5: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device. Please handle with caution.
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TK80F08K3
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
⎯
⎯
±1
μA
Drain cut-off current
IDSS
VDS = 75 V, VGS = 0 V
⎯
⎯
10
μA
V (BR) DSS ID = 10 mA, VGS = 0 V
75
⎯
⎯
V (BR) DSX ID = 10 mA, VGS = −20 V
50
⎯
⎯
Drain-source breakdown voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
⎯
4.0
V
RDS (ON)
VGS = 10 V, ID = 40 A
⎯
3.4
4.3
mΩ
⎯
8200
⎯
⎯
770
⎯
⎯
1140
⎯
⎯
30
⎯
⎯
55
⎯
Gate threshold voltage
Drain-source ON-resistance
V
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
tr
Turn-on time
VDS = 10 V, VGS = 0 V, f = 1 MHz
ton
tf
Turn-off time
VDD ≈ 30 V
Duty ≤ 1%, tw = 10 μs
toff
Total gate charge
(gate-source plus gate-drain)
RL = 0.75 Ω
4.7 Ω
Switching time
Fall time
ID = 40 A
VOUT
10 V
VGS
0V
Qg
ns
⎯
33
⎯
⎯
150
⎯
⎯
175
⎯
⎯
40
⎯
Gate-source charge1
Qgs1
Gate-drain (“miller”) charge
Qgd
⎯
65
⎯
Gate switch charge
Qsw
⎯
80
⎯
VDD ≈ 60 V, VGS = 10 V, ID = 80 A
pF
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
⎯
⎯
⎯
80
A
Pulse drain reverse current
IDRP
⎯
⎯
⎯
320
A
(Note 1)
Forward voltage (diode)
VDSF
IDR = 80 A, VGS = 0 V
⎯
−0.9
−1.2
V
Reverse recovery time
trr
IDR = 80 A, VGS = 0 V,
⎯
60
⎯
ns
Reverse recovery charge
Qrr
dIDR/dt = 50 A/μs
⎯
60
⎯
nC
Marking
Note 6: A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
K80F08K
3
Part No.
(or abbreviation code)
Lot No.
Note 6
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
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TK80F08K3
Moisture-Proof Packing
The TK150F04K3L is packed in a moisture-proof laminated aluminum bag.
Precautions for Transportation and Storage
(1) Avoid excessive vibration during transportation.
(2) Do not toss or drop the packed devices to avoid ripping of the bag.
(3) After opening the moisture-proof bag, the devices should be assembled within two weeks in an environment of 5°C
to 30°C and RH70% or below. Perform reflow at most twice.
(4) The moisture-proof bag may be stored unopened for up to 12 months at 5°C to 30°C and RH90% or below.
(5) If, upon opening the bag, the moisture indicator card shows humidity of 30% or above (the color of the 30% dot has
changed from blue to pink) or the expiration date has passed, the devices should be baked as follows:
Baking conditions: 125°C for 48 hours.
Since the tape materials are not heat-proof, devices should be placed on either heat-proof trays or aluminum
magazines when baking.
30%
The humidity indicator shows an approximate ambient humidity at 25°C.
If the ambient humidity is below 30%, the color of all the indicator dots is blue.
If, upon opening the bag, the color of the 30% dot has changed from blue to pink,
the devices should be baked before assembly.
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TK80F08K3
ID – VDS
5
Common source
Tc = 25℃
Pulse test
8
5.5
ID
6
30
4.4
20
4.2
10
10
5.2
200
5
150
4.8
100
4.6
50
VGS = 4 V
0
0
0.2
0.4
0.6
0.8
Drain-source voltage
VDS
0
1.0
0
(V)
2
6
8
4
VDS
4.4
10
(V)
VDS – VGS
(V)
Common source
Tc = 25℃
Pulse test
VDS
0.8
120
Drain-source voltage
(A)
ID
Drain Current
4.2
1
Common source
VDS = 10 V
Pulse test
160
VGS = 4 V
Drain-source voltage
ID – VGS
200
Common source
Tc = 25℃
Pulse test
5.5
6
8
250
4.6
Drain Current
(A)
ID
Drain Current
4.8
5.2
10
40
ID – VDS
300
(A)
50
80
25
100
40
Tc = −55°C
0
0
2
4
Gate-source voltage
6
8
VGS
0.6
0.4
ID = 80 A
0.2
0
10
(V)
40
20
0
4
8
12
Gate-source voltage
16
VGS
20
(V)
RDS (ON) – ID
Drain-source ON-resistance
RDS (ON) (mΩ)
100
Common source
Tc = 25℃
Pulse test
10
VGS = 10 V
1
1
10
Drain current
100
ID
1000
(A)
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TK80F08K3
IDR – VDS
RDS (ON) – Tc
1000
8
(A)
Common source
VGS = 10 V
Pulse test
IDR
40
ID = 80 A
6
Drain reverse current
20
4
2
0
−80
−40
0
40
80
Case temperature
Tc
120
300
Common source
Tc = 25℃
Pulse test
10
100
5
3
30
10
1
VGS = 0
3
1
0
160
0.4
(°C)
Capacitance – VDS
Vth (V)
Gate threshold voltage
Coss
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
10
VDS
4
3
2
1
0
−80
100
(V)
(V)
80
Drain-source voltage
VDS
300
200
100
80
Case temperature
40
80
TC
120
160
(°C)
Dynamic input/output characteristics
100
40
0
Case temperature
PD − Tc
0
−40
120
160
Tc
60
(°C)
16
VDS
15
VDD = 60 V
8
VGS
20
4
60
120
Total gate charge
5
12
30
40
0
0
200
20
Common source
ID = 80 A
Tc = 25℃
Pulse test
(V)
0.1
Crss
Common source
VDS = 10 V
ID = 1 mA
Pulse test
VGS
(pF)
C
Capacitance
1000
400
PD (W)
(V)
Vth – Tc
Ciss
Drain-source voltage
Drain power dissipation
VDS
2.0
5
10000
0
1.6
Drain-source voltage
100000
100
1.2
0.8
180
Qg
Gate-source voltage
Drain−source ON-resistance
RDS (ON) (mΩ)
10
0
240
(nC)
2010-02-02
TK80F08K3
rth − tw
Normalized transient thermal impedance
rth (t)/Rth (ch-c)
10
1
Duty=0.5
0.2
0.1
PDM
Single Pulse
0.1
t
0.05
T
0.02
0.01
0.01
10μ
Duty = t/T
Rth (ch-c) = 0.5°C/W
100μ
1m
10m
Pulse width
100m
tw
1
(s)
Safe operating area
EAS – Tch
500
1000
100 μs *
1 ms *
Avalanche energy
Drain current
ID (A)
100 ID max (continuous)
EAS (mJ)
ID max (pulsed) *
DC operation
Tc = 25°C
10
1
400
300
200
100
0
25
0.1
10
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
0.1
1
50
75
100
125
150
Channel temperature (initial)
175
Tch
200
(°C)
VDSS max
10
Drain-source voltage
100
1000
VDS (V)
20 V
BVDSS
IAR
0V
VDS
VDD
Test circuit
RG = 1 Ω
VDD = 25 V, L = 58 μH
6
Waveform
E
Ε AS =
⎛
⎞
1
B VDSS
⎟
⋅ L ⋅ I2 ⋅ ⎜
⎜B
⎟
2
−
V
DD ⎠
⎝ VDSS
2010-02-02
TK80F08K3
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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