TIGER ELECTRONIC CO.,LTD Product specification TIP122 / TIP127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The TIP122 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications.The complementary PNP types are TIP127 respectively. O ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Symbol Value Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current IC 5.0 A Base Current IB 0.1 A Ptot 65 W Tj 150 o Tstg -55~150 o Total Dissipation at Max. Operating Junction Temperature Storage Temperature C TO-220 C ELECTRICAL CHARACTERISTICS ( Ta = 25 OC) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICEO VCB=100V, IE=0 0.5 mA Emitter Cut-off Current IEBO VEB=5V, IC=0 2.0 mA Collector-Emitter Sustaining Voltage VCEO IC=30mA, IB=0 100 hFE(1) VCE=3V, IC=0.5A 1000 hFE(2) VCE=3V, IC=3.0A 1000 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(sat) V IC=3.0A,IB=12mA 2 IC=5.0A,IB=20mA 4 VBE(sat) VCE=3V,IC=3.0A 2.5 V V