TIGER ELECTRONIC CO.,LTD E Product specification MJE3055T / MJE2955T Complementary Silicon Power Ttransistors DESCRIPTION It is intented for use in power amplifier and switching applications. O ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Symbol Value Unit Collector-Base Voltage VCBO 70 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V Collector Current IC 10 A Base Current IB 6 A Ptot 75 W Tj 150 o Tstg -55~150 o Total Dissipation at Max. Operating Junction Temperature Storage Temperature C C TO-220 ELECTRICAL CHARACTERISTICS ( Ta = 25 OC) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICEO VCB=60V, IE=0 0.3 mA Emitter Cut-off Current IEBO VEB=5V, IC=0 5.0 mA Collector-Emitter Sustaining Voltage VCEO IC=100mA, IB=0 60 hFE(1) VCE=4V, IC=4.0A 20 hFE(2) VCE=4V, IC=10.0A 5 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product VCE(sat) 100 IC=4.0A,IB=400mA 1.1 IC=10.0A,IB=3.3A 8.0 VBE(sat) VCE=4V,IC=4.0A fT V VCE=10V,IC=500mA 1.8 2 V V MHz