TIG056BF Ordering number : ENA1775A SANYO Semiconductors DATA SHEET N-Channel IGBT TIG056BF High Power High Speed Switching Applications Features • • • Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Emitter Voltage Conditions Ratings VCES VGES Gate-to-Emitter Voltage Collector Current (Pulse) Unit 400 VGE=15V, CM=2000μF V ±33 V 240 A Allowable Power Dissipation ICP PC 30 W Channel Temperature Tch 150 °C Storage Temperature Tstg -55 to +150 °C Tc=25°C Package Dimensions Product & Package Information unit : mm (typ) 7509-005 • Package : TO-220FI(LS) • JEITA, JEDEC : SC-67, SOT-186A, TO-220F • Minimum Packing Quantity : 100 pcs./bag, 50 pcs./magazine 4.5 10.0 2.8 Marking Electrical Connection 7.2 3.5 3.2 TIG056 0.6 16.1 16.0 2 LOT No. 0.75 2.4 1 2 3 2.55 1 1.2 14.0 3.6 0.9 1.2 2.55 0.7 1 : Gate 2 : Collector 3 : Emitter 3 SANYO : TO-220FI(LS) http://semicon.sanyo.com/en/network N2411 TKIM TC-00002672/90110QJ TKIM TC-00002415 No. A1775-1/4 TIG056BF Electrical Characteristics at Ta=25°C Parameter Symbol Collector-to-Emitter Breakdown Voltage V(BR)CES ICES IGES IC=2mA, VGE=0V VCE=320V, VGE=0V VCE=10V, IC=1mA Collector-to-Emitter Saturation Voltage VGE(off) VCE(sat) Input Capacitance Cies Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Gate-to-Emitter Threshold Voltage Ratings Conditions min typ Unit max 400 V VGE=±30V, VCE=0V 2.5 IC=240A, VGE=15V 3.6 100 μA ±10 μA 5.0 V 5.0 V 5500 pF Output Capacitance Coes 100 pF Reverse Transfer Capacitance Cres 70 pF Turn-ON Delay Time td(on) 46 ns Rise Time tr 32 ns Turn-OFF Delay Time td(off) 140 ns Fall Time tf 270 ns VCE=20V, f=1MHz VCE=320V, IC=240A, VGE=15V, RG=10Ω Fig1 Large Current R Load Switching Circuit RL CM + VCC RG TIG056BF VGE IC -- VCE VCE=10V 150 100 50 0 1 2 3 4 5 6 Collector-to-Emitter Voltage, VCE -- V IT15776 °C 150 100 50 0 25 °C 200 75 8V Tc= -- 250 Collector Current, IC -- A V GE = 2 200 25° C V 10 0 0 2 --25 °C 25 °C V 12 0V 250 IC -- VGE 300 15V Tc=25°C Tc =7 5° C 300 Collector Current, IC -- A 100kΩ 4 6 8 10 Gate-to-Emitter Voltage, VGE -- V 12 IT15777 No. A1775-2/4 TIG056BF VCE -- VGE 5 4 IC=240A 3 120A 60A 2 1 0 2 4 6 8 10 12 14 16 18 Gate-to-Emitter Voltage, VGE -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Voltage, VCE -- V 120A 60A 1 0 2 4 6 8 10 12 14 16 18 60A 2 1 2 4 6 VGE(off) -- Tc 8 10 16 18 20 IT15779 I C=240A 4 3 120A 60A 2 1 --25 0 25 50 100 75 125 Case Temperature, Tc -- °C 150 IT15781 Cies, Coes, Cres -- VCE 10000 5 f=1MHz Cies 3 4 3 2 2 1000 7 5 3 2 Coes 100 1 Cres 7 5 --25 0 25 50 75 100 125 3 150 7 td(on) 5 3 tr 2 Switching test circuit Fig.1 VGE=15V VCC=320V RG=10Ω 10 2 3 5 7 100 2 Collector Current (Pulse), ICP -- A 3 5 IT15784 Switching Time, SW Time -- ns td (off) 4 6 8 10 12 14 16 18 20 IT15783 SW Time -- RG 2 tf 100 2 Collector-to-Emitter Voltage, VCE -- V 3 2 0 IT15782 SW Time -- ICP 5 7 10 14 5 7 5 0 --50 12 VCE(sat) -- Tc IT15780 Case Temperature, Tc -- °C Switching Time, SW Time -- ns 120A 0 --50 20 Cies, Coes, Cres -- pF Gate-to-Emitter Cutoff Voltage, VGE(off) -- V Gate-to-Emitter Voltage, VGE -- V 6 3 VGE=15V IC=240A 2 IC=240A 6 5 3 4 Gate-to-Emitter Voltage, VGE -- V Tc=75°C 4 5 0 20 Tc=25°C IT15778 VCE -- VGE 6 VCE -- VGE 6 Tc= --25°C Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V 6 Switching test circuit Fig.1 VGE=15V VCC=320V ICP=240A ff) t d(o tf ) n t d(o 1000 7 5 3 2 100 tr 7 5 3 2 0 10 20 30 40 50 60 70 80 Gate Series Resistance, RG -- Ω 90 100 110 IT15785 No. A1775-3/4 TIG056BF ICP -- VGE 250 200 150 100 50 0 0 5 10 15 20 25 30 Gate-to-Emitter Voltage, VGE -- V 35 40 IT15714 CM -- ICP 2500 Tc≤70°C CM=2000μF Main Capacitor, CM -- μF Collector Current (Pulse), ICP -- A 300 2000 1500 1000 500 0 Tc≤70°C VGE=15V VCE=320V 0 50 100 150 200 Collector Current (Pulse), ICP -- A 250 IT15715 Note : TIG056BF has protection diode between gate and emitter but handling it requires sufficient care to be taken. 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