ONSEMI PZT3904T1G

PZT3904T1G
General Purpose Transistor
NPN Silicon
Features
 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
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Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector -- Emitter Voltage
VCEO
40
Vdc
Collector -- Base Voltage
VCBO
60
Vdc
Emitter -- Base Voltage
VEBO
6.0
Vdc
IC
200
mAdc
Symbol
Max
Unit
PD
1.5
12
W
mW/C
Thermal Resistance Junction--to--Ambient
(Note 1)
RθJA
83.3
C/W
Thermal Resistance Junction--to--Lead #4
RθJA
35
C/W
Junction and Storage Temperature Range
TJ, Tstg
-- 55 to
+150
C
Collector Current -- Continuous
COLLECTOR
2, 4
1
BASE
3
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1)
TA = 25C
MARKING
DIAGRAM
AYW
1AM G
G
SOT--223
CASE 318E
STYLE 1
1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-- 4 with 1 oz and 713 mm2 of copper area.
1AM
= Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
PZT3904T1G
SOT--223
(Pb--Free)
1000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2010
October, 2010 -- Rev. 3
1
Publication Order Number:
PZT3904T1/D
PZT3904T1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Symbol
Min
Max
Unit
Collector -- Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
--
Vdc
Collector -- Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
--
Emitter -- Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
--
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
IBL
--
50
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
ICEX
--
50
40
70
100
60
30
--300
---
---
0.2
0.3
0.65
--
0.85
0.95
fT
300
--
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
--
5.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
--
8.0
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hie
1.0
10
kΩ
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hre
0.5
8.0
X 10 -- 4
Small -- Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hfe
100
400
--
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hoe
1.0
40
mMhos
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 kΩ, f = 1.0 kHz)
nF
--
5.0
dB
(VCC = 3.0 Vdc, VBE = -- 0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)
td
--
35
ns
tr
--
35
(VCC = 3.0 Vdc,
IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)
ts
--
200
tf
--
50
Characteristic
OFF CHARACTERISTICS (Note 2)
nAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain (Note 2)
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
HFE
Collector -- Emitter Saturation Voltage (Note 3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
Base -- Emitter Saturation Voltage (Note 3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
--
Vdc
Vdc
SMALL-- SIGNAL CHARACTERISTICS
Current -- Gain -- Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
2. FR-- 5 = 1.0 ¢ 0.75 ¢ 0.062 in.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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2
PZT3904T1G
DUTY CYCLE = 2%
300 ns
+3 V
+10.9 V
275
DUTY CYCLE = 2%
10 k
-- 0.5 V
t1
10 < t1 < 500 ms
+3 V
+10.9 V
275
10 k
0
CS < 4 pF*
< 1 ns
1N916
-- 9.1 V
CS < 4 pF*
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
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3
PZT3904T1G
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25C
TJ = 125C
10
5000
Q, CHARGE (pC)
CAPACITANCE (pF)
2000
5.0
Cibo
3.0
Cobo
2.0
1.0
VCC = 40 V
IC/IB = 10
3000
7.0
0.2 0.3
0.1
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
1000
700
500
100
70
50
20 30 40
QT
300
200
QA
1.0
2.0 3.0
REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. Capacitance
IC/IB = 10
50 70 100
200
t r, RISE TIME (ns)
tr @ VCC = 3.0 V
50
30
20
40 V
15 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
50
30
20
7
5
200
5.0 7.0 10
20
30
50 70 100
Figure 5. Turn -- On Time
Figure 6. Rise Time
IC/IB = 10
IC/IB = 10
10
7
5
30
50 70 100
200
IC/IB = 10
30
20
7
5
20
IC/IB = 20
100
70
50
10
5.0 7.0 10
VCC = 40 V
IB1 = IB2
300
200
IC/IB = 20
30
20
200
500
ts = ts -- 1/8 tf
IB1 = IB2
50
2.0 3.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
100
70
1.0
1.0
IC, COLLECTOR CURRENT (mA)
500
IC/IB = 20
100
70
10
2.0 V
td @ VOB = 0 V
VCC = 40 V
IC/IB = 10
300
200
t f , FALL TIME (ns)
TIME (ns)
100
70
10
t s , STORAGE TIME (ns)
30
500
300
200
300
200
20
Figure 4. Charge Data
500
7
5
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
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4
200
PZT3904T1G
TYPICAL AUDIO SMALL-- SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz)
14
12
SOURCE RESISTANCE = 200 Ω
IC = 1.0 mA
SOURCE RESISTANCE = 200 Ω
IC = 0.5 mA
8
6
SOURCE RESISTANCE = 1.0 k
IC = 50 mA
4
2
0
0.1
SOURCE RESISTANCE = 500 Ω
IC = 100 mA
0.2
0.4
1.0
2.0
f = 1.0 kHz
12
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
10
IC = 1.0 mA
IC = 0.5 mA
10
IC = 50 mA
8
IC = 100 mA
6
4
2
4.0
10
20
40
0
100
0.1
0.2
0.4
20
40
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
10
5.0
10
1.0
2.0
4.0
10
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (k Ω)
Figure 9.
Figure 10.
100
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
100
hoe, OUTPUT ADMITTANCE ( m mhos)
h fe , CURRENT GAIN
300
200
100
70
50
30
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
50
20
10
5
2
1
10
0.1
0.2
Figure 11. Current Gain
Figure 12. Output Admittance
h re , VOLTAGE FEEDBACK RATIO (X 10 --4 )
h ie , INPUT IMPEDANCE (k OHMS)
20
10
5.0
2.0
1.0
0.5
0.2
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
10
0.1
Figure 13. Input Impedance
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 14. Voltage Feedback Ratio
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5
PZT3904T1G
h FE, DC CURRENT GAIN (NORMALIZED)
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125C
VCE = 1.0 V
+25C
1.0
0.7
-- 55C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 15. DC Current Gain
1.0
TJ = 25C
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1.0
1.2
TJ = 25C
VBE(sat) @ IC/IB =10
0.8
VBE @ VCE =1.0 V
0.6
0.4
VCE(sat) @ IC/IB =10
θVC FOR VCE(sat)
0
-- 55C TO +25C
-- 0.5
-- 55C TO +25C
-- 1.0
+25C TO +125C
θVB FOR VBE(sat)
-- 1.5
0.2
0
+25C TO +125C
0.5
COEFFICIENT (mV/ C)
V, VOLTAGE (VOLTS)
1.0
1.0
2.0
5.0
10
20
50
100
-- 2.0
200
0
20
40
60
80
100
120
140
160
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 17. “ON” Voltages
Figure 18. Temperature Coefficients
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6
180 200
PZT3904T1G
PACKAGE DIMENSIONS
SOT--223 (TO--261)
CASE 318E--04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
4
HE
1
2
3
b
e1
e
A1
C
θ
A
0.08 (0003)
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
HE
E
θ
L
STYLE 1:
PIN 1.
2.
3.
4.
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
----------1.75
2.00
7.00
7.30
10
--
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
-----0.069
0.276
--
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
-----0.078
0.287
10
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm 
inches
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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PZT3904T1/D