2N3903, 2N3904 2N3903 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current – Continuous IC 200 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C –55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 200 °C/W Thermal Resistance, Junction to Case RθJC 83.3 °C/W Operating and Storage Junction Temperature Range TJ, Tstg 2 BASE 1 EMITTER STYLE 1 TO–92 CASE 29 STYLE 1 1 2 3 MARKING DIAGRAMS THERMAL CHARACTERISTICS (Note 1.) Characteristic 2N 3903 YWW Y WW 1. Indicates Data in addition to JEDEC Requirements. 2N 3904 YWW = Year = Work Week ORDERING INFORMATION Device Package Shipping 2N3903 TO–92 5000 Units/Box 2N3903RLRM TO–92 2000/Ammo Pack 2N3904 TO–92 5000 Units/Box 2N3904RLRA TO–92 2000/Tape & Reel 2N3904RLRE TO–92 2000/Tape & Reel 2N3904RLRM TO–92 2000/Ammo Pack 2N3904RLRP TO–92 2000/Ammo Pack 2N3904RL1 TO–92 2000/Tape & Reel 2N3904ZL1 TO–92 2000/Ammo Pack Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 November, 2000 – Rev. 3 1 Publication Order Number: 2N3903/D 2N3903, 2N3904 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector–Emitter Breakdown Voltage (Note 2.) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 – Vdc Collector–Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 60 – Vdc Emitter–Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 6.0 – Vdc IBL – 50 nAdc ICEX – 50 nAdc 20 40 35 70 50 100 30 60 15 30 – – – – 150 300 – – – – – – 0.2 0.3 0.65 – 0.85 0.95 250 300 – – OFF CHARACTERISTICS Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 2.) (IC = 0.1 mAdc, VCE = 1.0 Vdc) hFE 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector–Emitter Saturation Voltage (Note 2.) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc VCE(sat) Base–Emitter Saturation Voltage (Note 2.) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) – Vdc Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT 2N3903 2N3904 MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo – 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo – 8.0 pF 1.0 1.0 8.0 10 0.1 0.5 5.0 8.0 50 100 200 400 1.0 40 – – 6.0 5.0 td – 35 ns tr – 35 ns ts – – 175 200 ns tf – 50 ns Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) kΩ hie 2N3903 2N3904 Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) X 10–4 hre 2N3903 2N3904 Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 2N3903 2N3904 Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe Noise Figure (IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k Ω, f = 1.0 kHz) – NF 2N3903 2N3904 mhos dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time (VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) 2N3903 2N3904 Fall Time 2. Pulse Test: Pulse Width 300 s; Duty Cycle 2%. http://onsemi.com 2 2N3903, 2N3904 DUTY CYCLE = 2% 300 ns +3 V +10.9 V 275 +10.9 V DUTY CYCLE = 2% 10 k -0.5 V +3 V t1 10 < t1 < 500 s 275 10 k 0 CS < 4 pF* < 1 ns CS < 4 pF* 1N916 -9.1 V′ < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 10 5000 2000 5.0 Q, CHARGE (pC) CAPACITANCE (pF) 7.0 Cibo 3.0 Cobo 2.0 1.0 0.1 VCC = 40 V IC/IB = 10 3000 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 1000 700 500 100 70 50 20 30 40 QT 300 200 QA 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 3. Capacitance Figure 4. Charge Data http://onsemi.com 3 200 2N3903, 2N3904 500 t r, RISE TIME (ns) tr @ VCC = 3.0 V 50 30 20 7 5 40 V 100 70 50 30 20 15 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC/IB = 20 7 5 200 5.0 7.0 10 20 30 50 70 100 Figure 5. Turn–On Time Figure 6. Rise Time IC/IB = 10 30 20 10 7 5 30 50 70 100 200 IC/IB = 10 30 20 7 5 20 IC/IB = 20 100 70 50 10 5.0 7.0 10 VCC = 40 V IB1 = IB2 300 200 IC/IB = 20 50 200 500 t′s = ts - 1/8 tf IB1 = IB2 IC/IB = 10 2.0 3.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 100 70 1.0 1.0 IC, COLLECTOR CURRENT (mA) 500 300 200 10 2.0 V td @ VOB = 0 V VCC = 40 V IC/IB = 10 300 200 t f , FALL TIME (ns) TIME (ns) 100 70 10 t s′ , STORAGE TIME (ns) 500 IC/IB = 10 300 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time 200 TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 SOURCE RESISTANCE = 200 IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 A 4 0 0.1 SOURCE RESISTANCE = 500 IC = 100 A 0.2 0.4 1.0 2.0 f = 1.0 kHz 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 2 14 SOURCE RESISTANCE = 200 IC = 1.0 mA IC = 1.0 mA IC = 0.5 mA 10 IC = 50 A 8 IC = 100 A 6 4 2 4.0 10 20 40 0 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 9. Figure 10. http://onsemi.com 4 40 100 2N3903, 2N3904 h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) 100 hoe, OUTPUT ADMITTANCE ( mhos) h fe , CURRENT GAIN 300 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 50 20 10 5 2 1 10 0.1 0.2 Figure 11. Current Gain h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) h ie , INPUT IMPEDANCE (k OHMS) 10 5.0 2.0 1.0 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 5.0 10 Figure 12. Output Admittance 20 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 10 0.1 Figure 13. Input Impedance 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 14. Voltage Feedback Ratio http://onsemi.com 5 2N3903, 2N3904 h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 -55°C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 70 50 100 200 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 16. Collector Saturation Region 1.0 TJ = 25°C VBE(sat) @ IC/IB =10 V, VOLTAGE (VOLTS) 1.0 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 VC FOR VCE(sat) 0 -55°C TO +25°C -0.5 -55°C TO +25°C -1.0 +25°C TO +125°C VB FOR VBE(sat) -1.5 0.2 0 +25°C TO +125°C 0.5 COEFFICIENT (mV/ °C) 1.2 1.0 2.0 5.0 10 20 50 100 -2.0 200 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. “ON” Voltages Figure 18. Temperature Coefficients http://onsemi.com 6 180 200 2N3903, 2N3904 PACKAGE DIMENSIONS TO–92 TO–226AA CASE 29–11 ISSUE AL A B R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 7 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE 2N3903, 2N3904 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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