VISHAY MURS340

New Product
MURS340, MURS360
Vishay General Semiconductor
Surface Mount Ultrafast Plastic Rectifier
FEATURES
• Glass passivated chip junction
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
DO-214AB (SMC)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
400 V, 600 V
IFSM
125 A
trr
50 ns
VF
1.05 V
TJ max.
175 °C
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
MURS340
MURS360
MG
MJ
UNIT
Maximum repetitive peak reverse voltage
VRRM
400
600
V
Working peak reverse voltage
VRWM
400
600
V
Maximum DC blocking voltage
VDC
400
600
V
Maximum average forward rectified current at: (fig. 1)
TL = 130 °C
TL = 115 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
Document Number: 88816
Revision: 23-Nov-09
3.0
IF(AV)
A
4.0
IFSM
125
A
TJ, TSTG
- 65 to + 175
°C
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
New Product
MURS340, MURS360
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 3.0 A
Maximum instantaneous forward voltage
IF = 4.0 A
IF = 3.0 A
SYMBOL
MURS360
UNIT
1.25
TJ = 25 °C
VF
(1)
V
1.28
TJ = 150 °C
1.05
TJ = 25 °C
Maximum instantaneous reverse current
at rated DC blocking voltage
MURS340
10
IR (1)
TJ = 150 °C
μA
250
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
50
ns
Maximum reverse recovery time
IF = 1.0 A, dI/dt = 50 A/μs,
VR = 30 V, Irr = 10 % IRM
trr
75
ns
Maximum forward recovery time
IF = 1.0 A, dI/dt = 100 A/μs,
recovery to 1.0 V
tfr
25
ns
Note
(1) Pulse test: t = 300 μs, duty cycle ≤ 2 %
p
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance junction to ambient
MURS340
MURS360
11
RθJL
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
MURS340-E3/57T
0.211
57T
850
7" diameter plastic tape and reel
MURS340-E3/9AT
0.211
9AT
3500
13" diameter plastic tape and reel
MURS340HE3/57T
(1)
0.211
57T
850
7" diameter plastic tape and reel
MURS340HE3/9AT
(1)
0.211
9AT
3500
13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
150
Average Forward Current (A)
Average Forward Current (A)
5
4
3
2
1
0
125
100
75
50
25
0
25
50
75
100
125
150
175
1
10
100
TL - Lead Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88816
Revision: 23-Nov-09
New Product
MURS340, MURS360
Vishay General Semiconductor
1000
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TJ = 125 °C
10
TJ = 150 °C
1
TJ = 100 °C
TJ = 25 °C
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
10
1
0.1
2.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
120
Stored Charge/Reverse Recovery
Time (nC/ns)
1000
Instantaneous Reverse Current (μA)
100
TJ = 150 °C
100
TJ = 125 °C
TJ = 100 °C
10
1
TJ = 25 °C
0.1
0.01
trr
Qrr
100
1 A, 50 A/μs, 30 V
80
60
40
20
0
0
20
40
60
80
100
25
50
75
100
125
Percent of Rated Peak Reverse Voltage (%)
Junction Temperature (°C)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Reverse Switching Characteristics
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AB (SMC)
Cathode Band
Mounting Pad Layout
0.185 (4.69) MAX.
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.126 (3.20) MIN.
0.280 (7.11)
0.260 (6.60)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.320 (8.13) REF.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Document Number: 88816
Revision: 23-Nov-09
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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