40D(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Glass Passivated Standard Recovery Diodes (Stud Version), 40A FEATURES Glass passivated chips High surge current capability Stud cathode and stud anode version Wide current range Voltage up to 1600V VRRM RoHS compliant TYPICAL APPLICATIONS Battery charges Converters Power supplies Machine tool controls Welder DO-203AB(DO-5) PRODUCT SUMMARY IF(AV) 40A MAJOR RATINGS AND CHARACTERISTICS 40D(R) TEST CONDITIONS PARAMETER TC I F(AV) UNIT 02 TO 12 16 40 40 A 140 110 ºC I F(RMS) 50 HZ I FSM 60 HZ 50 HZ 60 HZ I 2t Range V RRM TJ 63 A 570 595 1625 1473 A A 2s 200 to 1200 1600 V -65 to 190 -65 to 160 ºC ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER 40D( R ) VOLTAGE CODE VRRM,MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM,MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 02 200 300 04 400 500 06 600 700 08 800 900 10 1000 1100 12 1200 1300 16 1600 1700 Page 1 of 6 VRRM,MAXIMUM TJ-TJ=Maximum mA 9 4.5 40D(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products FORWARD CONDUCTION 40D(R) TEST CONDITIONS SYMBOL PARAMETER Maximum average forward current at case temperature I F(AV) 16 40 40 A 140 110 ºC 180 ° conduction, half sine wave I F(RMS) Maximum RMS forward current 63 t = 10 ms Maximum peak, one-cycle forward, I FSM non-reptitive surge current UNIT 02 TO 12 t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied 570 100%V RRM reapplied 480 t = 10 ms t = 8.3 ms No voltage reapplied t = 10 ms 100%V RRM reapplied 595 Sinusoidal half wave, I 2t Maximum l²√t for fusing 2 I √t t = 0.1 to 10 ms, no voltage reapplied Maximum forward voltage drop V FM l pk = 125A, T J = 25˚C, t p = 400µs rectangular wave SYMBOL TEST CONDITIONS A 500 initial T J = T J maximum Maximum l²t for fusing t = 8.3 ms A 1625 1473 1150 A 2s 1050 A 2√s 16250 1.50 1.30 V FORWARD CONDUCTION 40D(R) PARAMETER Maximum junction operating and storage temperature range TJ Maximum thermal resistace, junction to case R thJC 02 TO 12 16 UNIT ºC - 65 to190 - 65 to160 DC operation 0.95 K/W Maximum thermal resistance R thCS case to heatsink 0.25 Mounting surface, smooth, flat and greased Not lubricated thread ,tighting on nut (1) 3.4(30) Maximum allowable mounting torque Lubricated thread ,tighting on nut (1) 2.3(20) (+0% , -10%) Not lubricated thread ,tighting on hexagon (2) 4.2(37) Lubricated thread ,tighting on hexagon (2) 3.2(28) N·m (lbf · in) 15 0.53 g oz. Approximate weight Case style See dimensions - link at the end of datasheet N·m (lbf · in) DO-203AB (DO-5) Note (1) Recommended for pass-through holes. (2) Recommended for holed threaded heatsinks. ΔRthJC CONDUCTION CONDUCTION ANGEL SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180˚ 0.14 0.10 120˚ 90˚ 0.16 0.21 0.30 0.17 0.22 0.31 1.50 0.50 60˚ 30˚ TEST CONDUCTIONS UNITS T J = T J maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Page 2 of 6 40D(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.2 Current Ratings Characteristics 190 40D(R) Series (200V to 1200V) 180 170 Conduction Angle 160 150 30° 140 60° 90° 120° 190 Maximum Allowable Case Temperature(˚C) Maximum Allowable Case Temperature(˚C) Fig.1 Current Ratings Characteristics 180° 40D(R) Series (200V to 1200V) 180 170 Conduction Period 160 150 30° 140 90° 120° 130 180° DC 120 130 0 5 10 15 20 25 30 35 40 45 0 10 Average Forward Current (A) 150 Conduction Angle 130 120 30° 60° 90° 120° 180° 100 5 10 15 20 25 30 60 140 Conduction Period 130 120 30° 110 60° 90° 100 120° 90 180° DC 80 0 10 20 30 40 50 60 Average Forward Current (A) Fig.5 Forward Power Loss Characteristics 60 =1 K/W K/ W aR elt -D 5K /W RMS Limit 30 SA Rth W K/ 3 K/W 1.5 40 2 180° 120° 90° 60° 30° 50 7K /W 20 Conduction Angle 40D(R) Series (200V to 1200V) Tj = 190°C 10 0 0 5 10 15 70 40D(R) Series (1600V) 40 45 35 50 150 Average Forward Current (A) Maximum Average Forward Power Loss (W) 0 40 160 Maximum Allowable Case Temperature(˚C) 40D(R) Series (1600V) 110 30 Fig.4 Current Ratings Characteristics 160 140 20 Average Forward Current (A) Fig.3 Current Ratings Characteristics Maximum Allowable Case Temperature(˚C) 60° 20 25 30 35 Average Forward Current (A) Page 3 of 6 10 K /W 40 40 80 120 160 Maximum Allowable Ambient Temperature (°C) 200 70 40D(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.6 Forward Power Loss Characteristics K/W K/ W aR elt -D 5K /W RMS Limit 30 =1 3 SA Rth 40 W K/ 50 K/W 1.5 DC 180° 120° 90° 60° 30° 2 Maximum Average Forward Power Loss (W) 60 7K /W 20 Conduction Period 10 K/ W 40D(R) Series 10 (200V to 1200V) Tj = 190°C 0 0 10 20 30 40 50 60 70 Average Forward Current (A) 40 80 120 160 200 Maximum Allowable Ambient Temperature (°C) Fig.7 Forward Power Loss Characteristics SA W R th K/ K/ W =1 K/W -D 5K /W R 25 7K 20 10 K Conduction Angle e l ta RMS Limit 3 1.5 30 40 /W 35 180° 120° 90° 60° 30° 45 2K Maximum Average Forward Power Loss (W) 50 /W /W 15 40D(R) Series 10 (1600V) 5 Tj = 160°C 0 0 10 20 30 40 Average Forward Current (A) 25 75 50 100 125 150 175 200 Maximum Allowable Ambient Temperature (°C) Fig.8 Forward Power Loss Characteristics 60 W K/ K/ W 2K /W 1 50 1. 5 = a elt -D DC 180° 120° 90° 60° 30° A hS Rt 3K /W 40 R Maximum Average Forward Power Loss (W) 70 RMS Limit 30 5K /W 7 K/ W Conduction Period 20 40D(R) Series (1600V) 10 10 K/W Tj = 160°C 0 0 10 20 30 40 50 60 Average Forward Current (A) Page 4 of 6 70 40 80 120 160 Maximum Allowable Ambient Temperature (°C) RoHS RoHS 40D(R)Series SEMICONDUCTOR Nell High Power Products Fig.9 Maximum Non-Repetitive Surge Current 600 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = Tj Max. @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 500 450 400 Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) 550 Fig.10 Maximum Non-Repetitive Surge Current 350 300 250 200 40D(R) Series 150 100 100 10 1 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial Tj = Tj Max. No Voltage Reapplied Rated Vrrm Reapplied 550 500 450 400 350 300 250 200 40D(R) Series 150 100 0.01 0.1 Number Of Equal Amplitude Half Cycle current Pulses(N) Fig.11 Forward Voltage Drop Characterisics (Up To 1200V) Transient Thermal Impedance ZthJC (K/W) Instantaneous Forward Current (A) 100 Tj = 25°C Tj = Tj Max. 40D(R) Series up to 1200V 1 0.5 1.5 1 2 2.5 3 3.5 4 4.5 5 Transient Thermal Impedance ZthJC (K/W) 1 Steady State Value (DC Operation) 0.1 40D(R) .. Series 0.1 1 Tj = Tj Max 100 Tj = 25°C 10 40D(R) Series 1 1 1.5 2 2.5 3 3.5 4 Square Wave Pulse Duration (s) Fig.13 Thermal Impedance ZthJC Characteristics 0.001 1000 0 Instantaneous Forward Voltage (V) 0.01 0.0001 Pulse Train Duration (S) Fig.12 Thermal Impedance ZthJC Characteristics (For 1600V) 1000 10 1 10 Square Wave Pulse Duration (s) Page 5 of 6 4.5 40D(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ORDERING INFORMATION TABLE Device code 40 D R 12 M 1 2 3 4 5 1 - 2 - D = Standard recovery device 3 - None = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud) 4 - Voltage code × 100 = VRRM (see Voltage Ratings table) 5 - Current rating: Code = IF(AV) None = Stud base DO-203AB (DO-5) 1/4”-28 UNF-2A M = Stud base DO-230AB (DO-5) M6× 1.0 17.3(0.68) 19(0.75) Ø15(Ø0.6) 0.9/1.5 (0.03/0.06) 11(0.43) 9.4/10.2 (0.37/0.4) 25.4(1.0) 6.1/6.7 (0.24/0.26) (3.0(0.11)MIN Ø4.3(Ø01.7) 1/4” 28UNF-2A For metric devices: M6× 1.0 Page 6 of 6