TOREX XC2401A8167R-G_12

XC2401A8167R-G
ETR2701-004b
1.6 GHz Low Noise Amplifier
■GENERAL DESCRIPTION
The XC2401A8167R-G is an ultra-low-noise amplifier (LNA) with low operating voltage, low noise figure (NF), low power
consumption using CMOS process.
The device offers easy output matching to 50Ω for input and output with less external components.
An internal self bias function eliminates external bias setting.
The device operates at 1.2V. For higher power supplies such as 1.8V and 2.85V, the device can operate with a self bias of
one adding resister.
.
■APPLICATIONS
●GPS RF module
■FEATURES
Noise Figure
:NF=0.69dB(TYP.) (@ 1.575GHz)
Low Power Consumption
:6.6mW (TYP.) @ VDD=1.2V, Fixed Bias
High Gain
:S21 =15dB(TYP.) (@ 1.575GHz)
Operation Voltage Range
:1.14V~1.26V @ Fixed Bias
Output
:CMOS Output, 50Ω driver built-in
Operating Ambient Temperature:-40℃~+85℃
Package
:USPN-4B02
Environmentally Friendly
:EU RoHS Compliant, Pb Free
■TYPICAL APPLICATION CIRCUIT ■ TYPICAL PERFORMANCE
CHARACTERISTICS
Figure 1: Fixed Bias
XC2401A816
S21 [dB]
Figure 2: Self Bias
2.8
16.0
2.4
15.0
2
14.0
1.6
13.0
1.2
12.0
0.8
11.0
0.4
10.0
1.375
1.475
1.575
1.675
0
1.775
Frequency [GHz]
VIN [V]
Rbias [Ω]
3.00
560
2.85
470
1.80
160
* RBIAS should be in ±1% tolerance and ±200ppm/℃ temperature stability.
1/16
NF [dB]
VDD =1.2V Ta=25℃
17.0
XC2401A8167R-G
■PIN CONFIGURATION
USPN-4B02
(BOTTOM VIEW)
■PIN ASSIGNMENT
PIN NUMBER
USPN-4B02
PIN NAME
FUNCTION
1
VDD
Power Supply RF
2
RF_OUT
RF Signal Output
3
VSS
Ground
4
RF_IN
RF Signal Input
■PRODUCT CLASSIFICATION
●Ordering Information
PRODUCT NAME
XC2401A8167R-G
(*1)
2/16
(*1)
PACKAGE
ORDER UNIT
USPN-4B02
5,000/Reel
The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant.
XC2401A8167R-G
■BLOCK DIAGRAM
■ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply Voltage
Supply Circuit
RF Input Power
RF_IN Input Voltage
RF_OUT Input Voltage
Power Dissipation
Operating Ambient Temperature
Storage Temperature
SYMBOL
VDD
IDD
PIN
RF_IN
RF_OUT
Pd
Topr
Tstg
Ta=25℃
RATINGS
VSS - 0.3 ~ 1.60
30
10
VSS - 0.3 ~ VDD + 0.3
VSS - 0.3 ~ VDD + 0.3
100
-40~+85
-55~+125
UNITS
V
mA
dBm
V
V
mW
o
C
o
C
3/16
XC2401A8167R-G
■ELECTRICAL CHARACTERISTICS
●DC Characteristics
Ta=25℃
Fixed Bias (refer to TYPICAL APPLICATION CIRCUIT, Figure 1)
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNITS
CIRCUIT
Power Supply Pin Voltage
VDD
-
1.14
1.20
1.26
V
①
Current Circuit
IDD
VDD=1.2V
5.5
10.5
mA
①
MIN.
TYP.
MAX.
UNITS
CIRCUIT
2.850
3.000
3.150
V
①
2.708
2.850
2.992
V
①
1.710
1.800
1.890
V
①
0.90
1.12
1.32
V
①
-
4.25
5.50
mA
①
Self Bias (refer to TYPICAL APPLICATION CIRCUIT, Figure 2)
PARAMETER
Input Power Supply
Voltage 1
Input Power Supply
Voltage 2
Input Power Supply
Voltage 3
Power Supply Pin Voltage
Current Circuit
SYMBOL
CONDITIONS
VDD
Rbias=560Ω±1%
±200ppm/℃
Rbias=470Ω±1%,
±200ppm/℃
Rbias=160Ω±1%,
±200ppm/℃
VIN = VIN1, VIN2, VIN3
IDD
VIN = VIN1, VIN2, VIN3
VIN1
VIN2
VIN3
* When the device is used in self bias, please use the specified RBIAS and CBIAS.
4/16
XC2401A8167R-G
■ELECTRICAL CHARACTERISTICS (Continued)
●AC Characteristics
VDD=1.2V
Ta=25℃
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNITS
CIRCUIT
Power Gain
S21
f=1.575 GHz
11.5
15.0
-
dB
②
Input Return Loss
S11
f=1.575GHz
-
6
-
dB
②
Output Return Loss
S22
f=1.575GHz
-
6
-
dB
②
Isolation
S12
f=1.575GHz
-
-20
-
dB
②
Noise Figure (*1)
NF
f=1.575GHz
-
0.69
-
dB
③
Input Power IP3
IIP3
f=1.575GHz, 1.576GHz
Pin = -30dBm
-
-1.0
-
dBm
④
Input Power @ 1dB
Gain Compression
P1dB
f=1.575GHz
-
-12
-
dBm
②
*1: NF is the value excluding the PCB loss.
Note
1. In case symptoms of transient voltage drop and rise temporarily, please use this IC within the stated maximum ratings.
The IC is liable to malfunction should the ratings be exceeded.
2. Please eliminate static electricity from the operational table, people, and soldering iron.
3. Please use noiseless power supply for stable operation.
4. Please use ±1% Rbias with ±200ppm/℃ temperature stability and 10nF Cbias.
5. Please connect Cbias to VDD pin as close as possible.
6. Please ensure to use an external component which does not depend on bias or temperature too much.
7. We will improve the product quality and improve reliability, however please make sure to design fail safe or pre-aging treatment on
the system.
5/16
XC2401A8167R-G
■TEST CIRCUITS
●Circuit ① (DC Characteristics: Power Supply Pin Voltage, Circuit Current, Input Power Supply Voltage)
*
Fixed Bias: Rbias=0Ω, VIN=VDD
** Pin / Pout is 50Ω
●Circuit ② (Power Gain, Input Return Loss, Output Return Loss, Isolation, Input Power @ 1dB Gain Compression)
*1: Refer to the circuit ⑤ for the block detail.
●Circuit ③ (Noise Figure)
*1: Refer to the circuit ⑤ for the block detail.
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XC2401A8167R-G
■TEST CIRCUITS (Continued)
●Circuit ④ (Input Power IP3)
*1: Refer to the circuit ⑤ for the block detail.
●Circuit ⑤ (XC2401 series, the circuit of the block)
100pF
RF_IN RF_OUT
Rbias
VIN
VDD
VSS
Cbias=10nF
VIN(V)
Rbias(Ω)
3.00
560
*
Fixed Bias: Rbias=0Ω, VIN=VDD
2.85
470
**
Rbias: Should be in ±1% tolerance and ±200ppm/℃ temperature stability.
1.80
160
7/16
XC2401A8167R-G
■EVALUATION BOARD
18mm
VDD
VSS
R1
C2
Pout
C1
L2
Pin
L1
20mm
SYMBOL
SPEC
C1
100pF
C2
10nF
L1
9.1nH
L2
6.2nH
R1
(*1)
(Rbias)
8/16
-
(*1)
COMMENT
MURATA
(GRM1552C1H)
TDK
(GLQ1005type)
TDK
( GLQ1005type)
Less than ±1% tolerance,
Less than ±200ppm/℃ temperature stability
PCB(FR-4)
MICROSTRIPLINE WIDTH = 0.6mm
t = 0.018mm
PCB size = 20mm×18mm
*1: Fixed Bias: Rbias=0Ω
* Please use an external component which does
not depend on bias or temperature too much.
XC2401A8167R-G
■TYPICAL PERFORMANCE CHARACTERISTICS
(2) Power Gain vs. Supply Voltage
(1) Supply Circuit vs. Supply Voltage
XC2401A816
XC2401A816
Ta=25℃、Pin=-35dBm
16.5
10.0
16.0
Power Gian : S21(dB)
Supply Current: IDD (mA)
Ta=25℃
12.0
8.0
6.0
4.0
2.0
0.0
15.5
15.0
14.5
14.0
13.5
1.12 1.14 1.16 1.18 1.2 1.22 1.24 1.26 1.28
1.12 1.14 1.16 1.18 1.2 1.22 1.24 1.26 1.28
Supply V oltage: V DD(V )
Supply V oltage: V DD(V )
(4) Output Return Loss vs. Supply Voltage
(3) Input Return Loss vs. Supply Voltage
XC2401A816
XC2401A816
Ta=25℃、Pin=-35dBm
Ta=25℃、Pin=-35dBm
Outtput Return Loss :S22 (dB)
Intput Return Loss : S11 (dB)
-4.5
-5.0
-5.5
-6.0
-6.5
-7.0
-7.5
-5.0
-5.5
-6.0
-6.5
-7.0
-7.5
-8.0
1.12 1.14 1.16 1.18 1.2 1.22 1.24 1.26 1.28
1.12 1.14 1.16 1.18 1.2 1.22 1.24 1.26 1.28
Supply V oltage: V DD(V )
Supply V oltage: V DD(V )
(6) Noise Figure vs. Supply Voltage
(5) Reverse Isolation vs. Supply Voltage
XC2401A816
XC2401A816
Ta=25℃、f=1.575GHz
-21.0
1.2
-21.5
1.0
Noise Figure: NF (dB)
Reverse Isolation :S12 (dB)
Ta=25℃、Pin=-35dBm
-22.0
-22.5
-23.0
-23.5
-24.0
0.8
0.6
0.4
0.2
0.0
1.12 1.14 1.16 1.18 1.2 1.22 1.24 1.26 1.28
1.12 1.14 1.16 1.18 1.2 1.22 1.24 1.26 1.28
Supply V oltage: V DD(V )
Supply V oltage: V DD(V )
9/16
XC2401A8167R-G
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(8) Input Power @ 1dB Gain compression vs. Power Supply Voltage
(7) Input 3 Order Intercept Point vs. Supply Voltage
XC2401A816
XC2401A816
VDD=1.2V,Pin=-30dBm
-10.5
Input Power @1dB Gian
Compression: P1dB (dBm)
Input 3Order Intercept Point:
IIP3(dBm)
Ta=25℃、f=1.575GHz
f =1.575&1.576GHz
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-11.0
-11.5
-12.0
-12.5
-13.0
-13.5
-1.2
-50
-25
0
25
50
75
1.12 1.14 1.16 1.18 1.2 1.22 1.24 1.26 1.28
100
Supply V oltage: V DD(V )
A mbient Temperature:Ta( ℃ )
(10) Power Gain vs. Ambient Temperature
(9) Supply Current vs. Ambient Temperature
XC2401A816
XC2401A816
VD D = 1.2V Pin=-35dBm
16.5
10.0
16.0
Power Gian : S21(dB)
Supply Current: IDD (mA)
VD D =1.2V
12.0
8.0
6.0
4.0
2.0
15.5
15.0
14.5
14.0
13.5
0.0
-50
-25
0
25
50
75
100
-50
A mbient Temperature:Ta( ℃ )
-25
0
25
XC2401A816
-4.5
-5.0
-5.5
-6.0
-6.5
-7.0
-7.5
25
50
75
A mbient Temperature:Ta( ℃ )
10/16
VD D = 1.2V Pin=-35dBm
Outtput Return Loss : S22 (dB)
Intput Return Loss : S11 (dB)
VDD= 1.2V Pin=-35dBm
0
100
(12) Output Return Loss vs. Ambient Temperature
XC2401A816
-25
75
A mbient Temperature:Ta( ℃ )
(11) Input Return Loss vs. Ambient Temperature
-50
50
100
-5.0
-5.5
-6.0
-6.5
-7.0
-7.5
-8.0
-50
-25
0
25
50
75
A mbient Temperature:Ta( ℃ )
100
XC2401A8167R-G
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(14) Noise Figure vs. Ambient Temperature
(13) Reverse Isolation vs. Ambient Temperature
XC2401A816
VD D = 1.2V Pin=-35dBm
-21.0
VDD=1.2V、f =1.575GHz
1.2
-21.5
Noise Figure: NF (dB)
Reverse Isolation: S12 (dB)
XC2401A816
-22.0
-22.5
-23.0
-23.5
-24.0
-50
-25
0
25
50
75
1.0
0.8
0.6
0.4
0.2
0.0
100
-50
-25
A mbient Temperature:Ta( ℃ )
-0.4
-0.6
-0.8
-1.0
-1.2
100
VDD= 1.2V Pin=-35dBm
-11.0
-11.5
-12.0
-12.5
-13.0
-13.5
1.12 1.14 1.16 1.18 1.2 1.22 1.24 1.26 1.28
-50
-25
Supply V oltage: V DD(V )
0
25
50
75
100
A mbient Temperature:Ta( ℃ )
(18) Input Return Loss vs. Frequency
(17) Power Gain vs. Frequency
XC2401A816
XC2401A816
VD D = 1.20V Pin=-35dBm
VD D = 1.20V Pin=-35dBm
20
-1.5
Intput Return Loss : S11 (dB)
Power Gian : S21(dB)
75
-10.5
-0.2
18
-40℃
16
25℃
14
85℃
12
10
8
1.00
50
XC2401A816
Ta=25℃,Pin=-30dBm
f =1.575& 1.576GHz
Input Power @1dB Gian
Compression: P1dB (dBm)
Input 3Order Intercept Point:
IIP3(dBm)
0.0
25
(16) Input Power @ 1dB Gain Compression vs. Ambient Temperature
(15) Input 3 Order intercept point vs. Ambient Temperature
XC2401A816
0
A mbient Temperature:Ta( ℃ )
1.20
1.40
1.60
Frequency : f [GHz]
1.80
2.00
-2.5
-3.5
-4.5
85℃
-5.5
-6.5
-7.5
1.00
25℃
1.20
-40℃
1.40
1.60
Frequency : f [GHz]
1.80
2.00
11/16
XC2401A8167R-G
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(20) Isolation vs. Frequency
(19) Output Return Loss vs. Frequency
XC2401A816
XC2401A816
VD D = 1.20V Pin=-35dBm
VD D = 1.20V Pin=-35dBm
-20
Reverse Isolation : S12 (dB)
Outtput Return Loss : S22 (dB)
-4
-5
-6
-7
85℃
-8
25℃
-9
-40℃
-10
1.00
1.20
1.40
1.60
Frequency : f [GHz]
1.80
-22
25℃
-23
-40℃
-24
-25
-26
1.00
2.00
85℃
-21
1.20
1.40
1.60
Frequency : f [GHz]
XC2401A816
XC2401A816
VD D = 1.20V Pin=-35dBm
VD D = 1.20V , f=1.575GHz
6
18
-40℃
5
16
Power Gian :P(dB)
Noise Figure: NF (dB)
2.00
(22) Power Gain vs. Input Power
(21) Noise Figure vs. Frequency
4
3
25℃
2
85℃
-40℃
1
0
1.00
1.20
1.40
1.60
Frequency : f [GHz]
1.80
XC2401A816
VD D =1.2V、Ta=25℃
120
0
100
Desire
-20
80
-40
60
Undesire
-60
40
-80
20
IM3
-100
-50
-40
-30
-20
-10
Input Pow er: Pin(dBm)
12/16
Inter-Modulation distortion:
IM3(dB)
20
0
0
10
14
25℃
12
85℃
10
8
-40
2.00
(23) Output Power / IM3 vs. Input Power
O utput Power:Pout(dBm)
1.80
-35
-30
-25
-20
-15
Input Pow er:Pin(dBm)
-10
-5
XC2401A8167R-G
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(24) Input Return Loss vs. Frequency (Smith Chart)
XC2401A816
(25) Output Return Loss vs. Frequency (Smith Chart)
XC2401A816
VDD=1.2V, Pin=-35dBm
VDD=1.2V, Pin=-35dBm
1.575GHz
1.575GHz
13/16
XC2401A8167R-G
■ PACKAGING INFORMATION
14/16
0.325±0.05
0.2±0.05
+0.02
0.38 -0.03
0.95±0.05
●USPN-4B02
XC2401A8167R-G
■ PACKAGING INFORMATION (Continued)
●USPN-4B02 Reference Pattern Layout
0.2
0.35
0.5
0.35
●USPN-4B02 Reference Metal Mask Design
■MARKING RULE
USPN-4B02
4
①
3
②
③
1
2
① represents product series.
MARK
PRODUCT SERIES
8
XC2401******-G
② represents product.
MARK
PRODUCT SERIES
A
XC2401A816**-G
③ represents production lot number.
01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to Z9, ZA to ZZ in order.
(G, I, J, O, Q, W excepted)
*No character inversion used.
15/16
XC2401A8167R-G
1. The products and product specifications contained herein are subject to change without
notice to improve performance characteristics.
Consult us, or our representatives
before use, to confirm that the information in this datasheet is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights arising from the use of any information and circuitry in this datasheet.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this datasheet.
4. The products in this datasheet are not developed, designed, or approved for use with
such equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this datasheet within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our representatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this datasheet may be copied or reproduced without the
prior permission of TOREX SEMICONDUCTOR LTD.
16/16