PD - 96313 IRFHM9331PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = -10V) Qg (typical) ID (@TA = 25°C) -30 V 14.6 mΩ 32 nC -11 5D G4 6 D S 3 7D S 2 8D S 1 S S S D D G D D A 3mm x 3mm PQFN Applications l System/load switch Features and Benefits Features Low Thermal Resistance to PCB (<6.0°C/W) Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Orderable part number Package Type IRFHM9331TRPBF PQFN 3mm x 3mm Benefits Enable better thermal dissipation results in Easier Manufacturing ⇒ Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Note Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C ID @ TC = 70°C IDM PD @TA = 25°C PD @ TA = 70°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range f f c Max. -30 ± 25 -11 -9 -24 -24 -90 2.8 1.8 Units 0.02 -55 to + 150 W/°C i V A W °C Notes through are on page 2 www.irf.com 1 06/30/10 IRFHM9331PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Drain-to-Source Breakdown Voltage -30 ––– ––– V ∆ΒVDSS/∆TJ RDS(on) Breakdown Voltage Temp. Coefficient ––– ––– 0.02 10.0 ––– ––– V/°C Static Drain-to-Source On-Resistance Conditions Units BVDSS mΩ VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -20V, ID = -11A VGS = -10V, ID = -11A e e ––– 11.7 14.6 VGS(th) Gate Threshold Voltage -1.3 -1.8 -2.4 V ∆VGS(th) Gate Threshold Voltage Coefficient ––– -5.1 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– ––– ––– -1.0 -150 µA VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– -10 10 µA VGS = -25V VGS = 25V gfs Qg Forward Transconductance Total Gate Charge 16 ––– ––– 16 ––– ––– S nC 32 4.4 48 ––– nC Qg Qgs h Total Gate Charge h Gate-to-Source Charge ––– ––– Qgd Gate-to-Drain Charge ––– 8 ––– RG td(on) Gate Resistance Turn-On Delay Time ––– ––– 16 11 ––– ––– tr td(off) Rise Time Turn-Off Delay Time ––– ––– 27 72 ––– ––– tf Ciss Fall Time Input Capacitance ––– ––– 60 1543 ––– ––– Coss Crss Output Capacitance Reverse Transfer Capacitance ––– ––– 310 208 ––– ––– h h h VDS = VGS, ID = -25µA VDS = -10V, ID = -9.0A VDS = -15V,VGS = -4.5V,ID = - 9.0A VGS = -10V VDS = -15V ID = -9.0A Ω VDD = -15V, VGS = -4.5V ns ID = -1.0A e RG = 6.8Ω See Figs. 19a & 19b VGS = 0V pF VDS = -25V ƒ = 1.0KHz Avalanche Characteristics Parameter EAS Single Pulse Avalanche Energy IAR Avalanche Current Diode Characteristics c Parameter d Min. IS Continuous Source Current ISM (Body Diode) Pulsed Source Current c (Body Diode) Typ. Typ. Max. Units ––– 76 mJ ––– -9.0 A Max. ––– ––– -2.8 ––– ––– -90 Units Conditions MOSFET symbol A D showing the integral reverse G p-n junction diode. S e VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.8A, VGS = 0V trr Reverse Recovery Time ––– 64 96 ns TJ = 25°C, IF = -2.8A, VDD = -24V Qrr Reverse Recovery Charge ––– 25 38 nC di/dt = 100/µs Thermal Resistance Parameter g RθJC Junction-to-Case RθJA Junction-to-Ambient RθJA f Junction-to-Ambient (t<10s) f Typ. Max. ––– 6 45 ––– e Units °C/W 30 Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.904mH, RG = 50Ω, IAS = -9A. Pulse width ≤ 400µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board. Rθ is measured at TJ of approximately 90°C. For DESIGN AID ONLY, not subject to production testing. Current limited by package. . 2 www.irf.com IRFHM9331PbF 1000 1000 VGS -10V -5.0V -4.5V -3.5V -3.3V -3.1V -2.9V -2.7V 100 BOTTOM ≤60µs PULSE WIDTH -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) TOP 10 -2.7V 1 TOP Tj = 150°C 100 BOTTOM VGS -10V -5.0V -4.5V -3.5V -3.3V -3.1V -2.9V -2.7V 10 -2.7V ≤60µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 1 10 100 0.1 -V DS, Drain-to-Source Voltage (V) 100 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 100 T J = 150°C 10 T J = 25°C 1 VDS = -15V ≤60µs PULSE WIDTH 1.5 2 2.5 3 3.5 4 ID = -11A VGS = -10V 1.4 1.2 1.0 0.8 0.6 0.1 -60 -40 -20 0 4.5 Fig 3. Typical Transfer Characteristics 10000 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) -VGS, Gate-to-Source Voltage (V) Fig 4. Normalized On-Resistance vs. Temperature 14 VGS = 0V, f = 1 KHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd -VGS, Gate-to-Source Voltage (V) ID= -9A C oss = C ds + C gd C, Capacitance (pF) 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics -I D, Drain-to-Source Current (A) 1 -V DS, Drain-to-Source Voltage (V) Ciss 1000 Coss Crss 12 10 VDS= -24V VDS= -15V VDS= -6V 8 6 4 2 0 100 1 10 100 -VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com 0 5 10 15 20 25 30 35 40 45 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage 3 IRFHM9331PbF 1000 -I D, Drain-to-Source Current (A) -I SD, Reverse Drain Current (A) 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100 T J = 150°C 10 T J = 25°C 100µsec 1msec 10 10msec 1 DC 0.1 T A = 25°C Tj = 150°C Single Pulse VGS = 0V 1.0 0.01 0.4 0.6 0.8 1.0 1.2 0 1 -VSD, Source-to-Drain Voltage (V) 100 -VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 2.5 -V GS(th), Gate threshold Voltage (V) 12 10 -ID, Drain Current (A) 10 8 6 4 2 2.0 1.5 ID = -25uA 1.0 0.5 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( °C ) T A , Ambient Temperature (°C) Fig 10. Threshold Voltage vs. Temperature Fig 9. Maximum Drain Current vs. Ambient Temperature Thermal Response ( Z thJA ) °C/W 100 10 D = 0.50 0.20 0.10 0.05 0.02 0.01 1 0.1 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com IRFHM9331PbF RDS(on), Drain-to -Source On Resistance ( mΩ) RDS(on), Drain-to -Source On Resistance (m Ω) 30 ID = -11A 25 20 T J = 125°C 15 10 T J = 25°C 5 0 5 10 15 20 100 80 60 40 Vgs = -4.5V Vgs = -10V 20 0 25 0 20 60 100 Fig 13. Typical On-Resistance vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage 350 1000 ID TOP -1.9A -2.9A BOTTOM -9.0A 300 800 Power (W) 250 200 150 600 400 100 200 50 0 1E-5 0 25 50 75 100 125 150 1E-4 Fig 14. Maximum Avalanche Energy vs. Drain Current D.U.T * 1E-2 Driver Gate Drive + - D.U.T. ISD Waveform Reverse Recovery Current + di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD + - Re-Applied Voltage Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Body Diode www.irf.com VDD Forward Drop Inductor Current Inductor Curent Ripple ≤ 5% Reverse Polarity of D.U.T for P-Channel P.W. Period * • • • • 1E+0 VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer D= Period P.W. - 1E-1 Fig 15. Typical Power vs. Time + RG 1E-3 Time (sec) Starting T J , Junction Temperature (°C) * 80 -I D, Drain Current (A) -VGS, Gate -to -Source Voltage (V) EAS , Single Pulse Avalanche Energy (mJ) 40 ISD * VGS = 5V for Logic Level Devices Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs 5 IRFHM9331PbF Id Vds Vgs L VCC DUT 0 20K 1K Vgs(th) SS Qgodr Fig 17a. Gate Charge Test Circuit I AS D.U.T RG IAS -V GS -20V tp Qgs2 Qgs1 Fig 17b. Gate Charge Waveform L VDS Qgd VDD A DRIVER 0.01Ω tp V(BR)DSS 15V Fig 18b. Unclamped Inductive Waveforms Fig 18a. Unclamped Inductive Test Circuit VDS RD td(on) VGS RG t d(off) tf VGS D.U.T. - + 10% V DD -VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 19a. Switching Time Test Circuit 6 tr 90% VDS Fig 19b. Switching Time Waveforms www.irf.com IRFHM9331PbF PQFN Package Details PQFN Part Marking INTERNATIONAL RECTIFIER LOGO 6 DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) XXXX XYWWX XXXXX PART NUMBER MARKING CODE (Per Marking Spec.) PIN 1 IDENTIFIER LOT CODE (Eng Mode - Min. last 4 digits of EATI #) (Prod Mode - 4 digits SPN code) TOP MARKING (LASER) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7 IRFHM9331PbF PQFN Tape and Reel Qualification information† Qualification level Moisture Sensitivity Level RoHS compliant Cons umer (per JE DE C JE S D47F PQFN 3mm x 3mm †† ††† guidelines ) MS L1 ††† (per IPC/JE DE C J-S T D-020D Yes ) Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ††† Applicable version of JEDEC standard at the time of product release. † Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/2010 8 www.irf.com