Memory Products In Brief . . . Motorola’s memory product portfolio has been expanded to support a broad range of engineering applications. Included in this portfolio are asynchronous devices with access times of 6 ns at 256K–bit density, 6 ns at 5 V 1 Megabit density, 8 ns at 3.3 V 1 Megabit density, as well as synchronous FSRAMs with access times as fast as 4.5 ns and 7.5 ns. Motorola’s Fast Static RAM Division goal is simple: speed. All of our SRAMs are designed to provide the highest performance, cost efficient solutions available. Flash memory is the most cost–effective non–volatile semiconductor memory. Motorola’s Flash products can be easily programmed while remaining in the system. Motorola Master Selection Guide Fast Static RAMs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Synchronous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Asynchronous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Fast Static RAM Modules . . . . . . . . . . . . . . . . . . . . . Flash Memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Standard MobileFLASH Memory . . . . . . . . . . . . . MobileFLASH Memory . . . . . . . . . . . . . . . . . . . . . . Flash Component Part Nomenclature . . . . . . . . . . . 2.8–1 Page 2.8–2 2.8–2 2.8–2 2.8–3 2.8–4 2.8–5 2.8–6 2.8–6 2.8–7 Memory Products Fast Static RAMs Introduction Application specific memories are designed for high–performance microprocessors that require more specialization from memory cache than is available from standard devices. Products include those for use with digital signal processors as well as a variety of popular microprocessors. Motorola is designing the fastest, most technologically advanced fast SRAMs. From 0.8 to 0.5 µm with access times as fast as 5 V 6 ns 256K, 6 ns 1M, 13 ns 4M, and 8 ns 3.3 V 1M; these devices are progressively smaller, faster, and lower cost. These SRAMs are designed to provide the highest performance, cost efficient solutions available. Selected fast SRAMs are also available on 2M and 8M memory modules. SYNCHRONOUS Late Write RAMs Description Organi– zation VCC Motorola Part Number 4M 256K x 18 3.3 V 128K x 36 Pin Count Packaging Cycle Time (ns Max) Pro– duction MCM69R818A 119 (ZP) PBGA 5/6/7/8 Now Late write interface. Register/Register. HSTL I/Os. MCM69R819A 119 (ZP) PBGA 5/6/7/8 Now Late write interface. Register/Register. LVTTL I/Os. MCM69R820A 119 (ZP) PBGA 5/6/7/8 Now Late write interface. Register/Register. 2.5 V I/Os. MCM69L818A 119 (ZP) PBGA 8.5/9/9.5 Latency Now Late write interface. Register/Latch. HSTL I/Os MCM69L819A 119 (ZP) PBGA 8.5/9/9.5 Latency Now Late write interface. Register/Latch LVTTL I/Os. MCM69L820A 119 (ZP) PBGA 8.5/9/9.5 Latency Now Late write interface. Register/Latch 2.5 V I/Os. MCM69R736A 119 (ZP) PBGA 5/6/7/8 Now Late write interface. Register/Register. HSTL I/Os. MCM69R737A 119 (ZP) PBGA 5/6/7/8 Now Late write interface. Register/Register. LVTTL I/Os. MCM69R738A 119 (ZP) PBGA 5/6/7/8 Now Late write interface. Register/Register. 2.5 V I/Os. MCM69L736A 119 (ZP) PBGA 8.5/9/9.5 Latency Now Late write interface. Register/Latch. HSTL I/Os. MCM69L737A 119 (ZP) PBGA 8.5/9/9.5 Latency Now Late write interface. Register/Latch. LVTTL I/Os. MCM69L738A 119 (ZP) PBGA 8.5/9/9.5 Latency Now Late write interface. Register/Latch. 2.5 V I/Os. Pin Count Packaging Access Time (ns Max) Pro– duction Comments Tag RAMs Description Organi– zation VCC Motorola Part Number Tag RAMs 64K x 18 3.3 V MCM69T618 100 119 (TQ) TQFP (ZP) PBGA 5/6/7 Now Now 100 MHz Data/Tag RAM. For MIPS R5000, Pentium Pro and graphics accelerators applications. 16K x 16 5V MPC27T416 80 (TQ) TQFP 9/10/12 Now Cache tag RAM for PowerPC. 14 tag bits, 2 status bits. 16K x 15 5V MPC27T415 80 (TQ) TQFP 9/10/12 Now Cache tag RAM for PowerPC. 12 tag bits, 3 status bits. Drop in replacement for IDT71216. 16K x 64 3.3 V MCM69C432 100 (TQ) TQFP 180 ns Match Time 4Q97 Content addressable memory for communication applications. 16K connections. 4K x 64 3.3 V MCM69C232 100 (TQ) TQFP 160 ns Match Time Now Content addressable memory for communication applications. 4K connections. MPC2605 241 (ZP) PBGA 66 MHz 4Q97 Integrated L2 cache for PowerPC processors.One component for 256KB, two for 512KB, and four for 1MB L2 cache solution. MPC2604GA 357 (ZP) PBGA 66 MHz Now Integrated L2 cache for PowerPC processors.Two components for 256KB, four for 512KB L2 cache solution. Comments CAMs CAMs Integrated Cache Solutions Integrated Cache S l ti Solutions 32K x 72 3.3 V 32K x 36 5V Separate and Dual I/O Devices 4M 512K x 9 5V MCM67Q909 86 (ZP) PBGA 5/6 Now General synchronous separate I/O with write pass through. 3.3 V output levels. 1M 128K x 9 5V MCM67Q709A 86 (ZP) PBGA 5/6 Now General synchronous separate I/O with write pass through. 3.3 V output levels. Replaces the MCM67Q709. 32K x 36 3.3 V MCM69Q536 176 (TQ) TQFP 6/8/10 4Q97 Single address, separate I/O. NetRAM. Sampling now. MCM69D536 176 (TQ) TQFP 6/8/10 4Q97 Dual address, dual I/O. NetRAM. Sampling now. MCM69Q618 100 (TQ) TQFP 6/8/10 4Q97 Single address, separate I/O. NetRAM. Sampling now. MCM69D618 100 (TQ) TQFP 6/8/10 4Q97 Dual address, dual I/O. NetRAM. Sampling now. MCM62X308 28 300 (J) SOJ 15/17 Now Line buffer for processing digital data. Sampling now. 64K x 18 Line Buffer 8K x 8 Memory Products 3.3 V 5V 2.8–2 Motorola Master Selection Guide SYNCHRONOUS BurstRAMs Description Organi– zation VCC 4M 256K x 18 3.3 V 128K x 36 2M 1M 3.3 V 128K x 32 3.3 V 64K x 32 3.3 V Motorola Part Number Pin Count Packaging Access Time (ns Max) Pro– duction MCM69P819 100 119 (TQ) TQFP (ZP) PBGA 3.5/3.8/4 1Q98 Pipelined BurstRAM for servers, switches, and workstations. XCM available now. MCM69F819 100 119 (TQ) TQFP (ZP) PBGA 7.5/8/8.5/11 1Q98 Flow–through BurstRAM for servers, switches, and workstations. XCM available now. MCM69P737 100 119 (TQ) TQFP (ZP) PBGA 3.5/3.8/4 1Q98 Pipelined BurstRAM for servers, switches, and workstations. XCM available now. MCM69F737 100 119 (TQ) TQFP (ZP) PBGA 7.5/8/8.5/11 1Q98 Flow–through BurstRAM for servers, switches, and workstations. XCM available now. MCM63P733 100 (TQ) TQFP 4/4.5/5 1Q98 133 MHz pipelined BurstRAM, for servers and notebooks. Sampling now at 100 MHz. MCM63F733 100 (TQ) TQFP 10/11 1Q98 75 MHz flow–through BurstRAM, for servers and datacomm. MCM63P631 100 (TQ) TQFP Now — (DW) TrueDie 117 MHz 4.5/7/8 ns 4.5/7/8 ns 117 MHz pipelined BurstRAM, for desktop PCs and communications applications. Pipelined BurstRAM for ultraportable computing. MCM63PV631 100 (TQ) TQFP 4Q97 Comments 133/117/66/60 MHz Now 2.5 V I/O GreenRAM. For MMX processor, notebooks, and low–power communication applications needs. 32K x 32 3.3 V MCM63P535 — (DW) TrueDie 4.5/7/8 4Q97 Pipelined BurstRAM for ultraportable computing. 64K x 18 3.3 V MCM69F618C 100 (TQ) TQFP 8.5/9/10/12 4Q97 5 V tolerant on all pins. Samples 3Q97. MCM69P618C 100 (TQ) TQFP 4/4.5/5/6/7 4Q97 5 V tolerant on all pins. Samples 3Q97. MCM67B618A 52 (FN) PLCC 8.5/9/10/12 Now Flow–through BurstRAM for Pentium, MIPS. Not for new designs, suggest MCM67B618B. MCM67B618B 52 (FN) PLCC 8.5/9/10/12 4Q97 Flow–through BurstRAM for Pentium, MIPS. MCM67C618A 52 (FN) PLCC 5/7 Now Pipelined BurstRAM for Pentium. Not for new designs, suggest MCM67C618B. MCM67C618B 52 (FN) PLCC 5/7 4Q97 Pipelined BurstRAM for Pentium and communication applications. MCM67M618A 52 (FN) PLCC 9/10/12 Now Flow–through BurstRAM for PowerPC. Not for new designs, suggest MCM67M618B. 5V 32K x 36 3.3 V MCM67M618B 52 (FN) PLCC 9/10/12 4Q97 Flow–through BurstRAM for PowerPC. MCM69F536B 100 (TQ) TQFP 8.5/9/10/12 Now Flow–through BurstRAM, 5 V tolerant I/Os. Not for new designs, suggest MCM69F536C. MCM69F536C 100 (TQ) TQFP 8.5/9/10/12 4Q97 5 V tolerant on all pins. Samples 3Q97. MCM69P536B 100 (TQ) TQFP 4/4.5/5/6/7 Now Pipelined BurstRAM, 5 V tolerant I/Os. Not for new designs, suggest MCM69P536C. MCM69P536C 100 (TQ) TQFP 4/4.5/5/6/7 4Q97 5 V tolerant on all pins. Samples 3Q97. ASYNCHRONOUS Density Organi– zation VCC 4M 512K x 8 5V 5V Motorola Part Number Pin Count Packaging Package width in mils Access TIme (ns Max) Pro– duction MCM6246 36 400 (WJ) SOJ 17/20/25 Now Output enable. Revolutionary pinout. Comments MCM6246A 36 400 (WJ) SOJ 15 Now For switches and basestations. 3.3 V MCM6946 36 400 (YJ) SOJ 10/12/15 1Q98 For telecom, storage and computing applications. Samples 4Q97. 256K x 16 3.3 V MCM6343 44 44 400 (YJ) SOJ TSOP 10/12/15 2Q98 For telecom, modems, cellular, storage and computing applications. Samples 1Q98. 1M x 4 5V MCM6249 32 400 (WJ) SOJ 20/25/35 Now Output enable. Revolutionary pinout. 5V MCM6249A 32 400 (WJ) SOJ 15 Now Replaces MCM6249. For switches, routers and basestations. 3.3 V MCM6949 32 400 (YJ) SOJ 10/12/15 1Q98 For telecom, storage, and computing applications. Samples 4Q97. MCM6341 119 (ZP) PBGA 10/12/15 1Q98 DSP applications for base stations, cost, and other communication applications. Samples late 4Q97. (FN) PLCC 10/12/15 Now Not recommended for new designs. Suggest MCM67A618B. 3M 128K x 24 3.3 V 1M 64K x 18 5V MCM67A618A 52 5V MCM67A618B 52 (FN) PLCC 10/12/15 Now General asynchronous, latched address and data. 64K x 16 3.3 V MCM6323 44 400 (YJ) SOJ 12/15 Now Not recommended for new designs. Suggest MCM6323A. 3.3 V MCM6323A 44 400 (YJ) SOJ (TS) TSOP 10/12/15 4Q97 Industrial temperature offered. Revolutionary pinout. DSP applications. Samples 3Q97. 5V MCM6226BB 32 300 (EJ), 400 (XJ) SOJ 15/17/20/25 Now Evolutionary pinout. 5V MCM6726C 32 400 (WJ) SOJ 6/7 Now Revolutionary pinout. 5V MCM6726D 32 400 (WJ) SOJ 7.5/8/10/12 Now Revolutionary pinout. 3.3 V MCM6326 32 400 (YJ) SOJ 12/15/20 1Q98 Revolutionary pinout. Samples January 98. 3.3 V MCM6926A 32 400 (WJ) SOJ 8/10/12/15 Now Revolutionary pinout. MCM6229BB 28 300 (EJ), 400 (XJ) SOJ 15/17/20/25 Now Evolutionary pinout. 128K x 8 256K x 4 5V Motorola Master Selection Guide 2.8–3 Memory Products ASYNCHRONOUS Density Organi– zation 1M x 1 VCC Motorola Part Number Pin Count Packaging Package width in mils Access TIme (ns Max) Pro– duction Comments 5V MCM6229CA 28 300 (EJ), 400 (XJ) SOJ 15/17/20/25 1Q98 Replaces MCM6226BB. Evolutionary pinout. Samples 4Q97. 5V MCM6729D 32 400 (WJ) SOJ 7.5/8/10/12 Now Revolutionary pinout. 3.3 V MCM6929A 32 400 (WJ) SOJ 8/10/12/15 Now Revolutionary pinout. 5V MCM6227B 28 300 (J), 400 (WJ) SOJ 15/17/20/25 Now For telecom, IC tester applications, and storage. 5V MCM6227BB 28 300 (J), 400 (WJ) SOJ 15/20/25 1Q98 Replaces MCM6227B. For telecom, IC tester applications, and storage. Samples available 4Q97. DSPRAM 8K x 24 5V MCM56824A 52 (FN) PLCC 20/25/35 Now Designed for DSP56001 applications. Replaces 32K x 8s. 256K 32K x 8 5V MCM6206BA 28 300 (EJ) SOJ 12/15/20/25 Now Not recommended for new designs. Suggest MCM6206BB. 5V MCM6206BB 28 300 (EJ) SOJ 12/15/20/25 4Q97 Replaces MCM6206BA. 5V MCM6706B 28 300 (J) SOJ 8/10 Now Evolutionary pinout. Not recommended for new designs. Suggest MCM6706D. 5V MCM6706BR 32 300 (J) SOJ 6/7/8 Now Revolutionary pinout. Not recommended for new designs. Suggest MCM6706DR. 5V MCM6706D 28 300 (J) SOJ 8/10 1Q98 Evolutionary pinout. Samples late 4Q97. 5V MCM6706DR 32 300 (J) SOJ 6/7/8 1Q98 Revolutionary pinout. Samples late 4Q97. 5V MCM6709B 28 300 (J) SOJ 8/10 Now Evolutionary pinout. Not recommended for new designs. 5V MCM6709BR 28 300 (J) SOJ 6/7/8 Now Revolutionary pinout. Not recommended for new designs. 64K x 4 FAST STATIC RAM MODULES (Contact Fast Static RAM Marketing for Custom Fast SRAM Modules) Desktop Computing Applications Description Organization and Function Access Time Packaging Production Motorola Part Number PowerPC Cache M d l Modules 64K x 72 Flow–Through Burst 9 ns 178 Pin Card Edge g DIMM (DG) ( ) Now MPC2105B 128K x 72 Flow–Through Burst 9 ns Coast Modules 64K x 64 Pipelined Burst 8 ns Now MPC2106B 160 Pin Card Edge DIMM (DG) Now MCM64PE64 Data Communications Applications Standard BurstRAM Modules Standard BurstRAM Multichip Packages Memory Products 64K x 72 Flow–Through Burst 9/12 ns 168 Pin DIMM (DG) 3Q97 MCM72F6DG 128K x 72 Flow–Through Burst 9/12 ns 168 Pin DIMM (DG) 3Q97 MCM72F7DG 256K x 72 Flow–Through Burst 8/12 ns 168 Pin DIMM (DG) 4Q97 MCM72F8DG 512K x 72 Flow–Through Burst 8/12 ns 168 Pin DIMM (DG) 4Q97 MCM72F9DG 256K x 72 Flow–Through Burst 7.5/8 ns Multichip Module on Laminate (ML) 4Q97 MCM72FB8ML 256K x 72 Pipelined Burst 3.5/4 ns 4Q97 MCM72PB8ML 512K x 36 Flow–Through Burst 7.5/8 ns 4Q97 MCM36FB9ML 512K x 36 Pipelined Burst 3.5/4 ns 4Q97 MCM36PB9ML 2.8–4 Motorola Master Selection Guide Motorola Master Selection Guide 2.8–5 Memory Products Flash memory is the most cost–effective non–volatile semiconductor memory. Flash possesses a distinct advantage over traditional non–volatile memories in that it can be easily programmed while remaining in the system. Motorola’s low power flash memory products are ideally suited for portable cellular phones, handheld electronic devices, networking equipment and telecom applications. Please contact your Motorola sales representative for more information. Flash Memory Memory Products 2.8–6 Motorola Master Selection Guide 8 Mbit 8 Mbit 8 Mbit 8 Mbit Density 1M x 8 or 512K x 16 1M x 8 or 512K x 16 1M x 8 or 512K x 16 1M x 8 or 512K x 16 Organization Density 8 Mbit 8 Mbit 8 Mbit 8 Mbit Motorola Part Number M28F800A2UT12 M28F800A2UR12 M28F800A2UA12 M28F800A2BA12 1M x 8, 512K x 16 1M x 8, 512K x 16 1M x 8, 512K x 16 1M x 8, 512K x 16 Organization MobileFLASH MEMORY WITH BACKGROUND OPERATION M29F800A3UT M29F800A3UR M29F800A3BT M29F800A3BR Motorola Part Number STANDARD MobileFLASH MEMORY 48 Pin TSOP 48 Pin TSOP .65 pitch µBGA .65 pitch µBGA Package Options 48 Pin TSOP 48 Pin Reverse TSOP 48 Pin TSOP 48 Pin Reverse TSOP Package Options Top Bottom Top Bottom Boot Block Top Top Bottom Bottom Boot Block VCC = 3.3 V, VPP = 5.0 V VCC = 3.3 V, VPP = 5.0 V VCC = 3.3 V, VPP = 5.0 V VCC = 3.3 V, VPP = 5.0 V Power Supply 3.3 Volt 3.3 Volt 3.3 Volt 3.3 Volt Power Supply 120 ns 120 ns 120 ns 120 ns Speed 80, 100, 120 ns 80, 100, 120 ns 80, 100, 120 ns 80, 100, 120 ns Speed NOW NOW 2Q98 2Q98 Production NOW NOW NOW NOW Production Motorola Master Selection Guide 2.8–7 Memory Products Density/Configuration 040 = 4M x 8 400 = 4M x 8 / x 16 080 = 8M x 8 800 = 8M x 8 / x 16 016 = 16M x 8 160 = 16M x 8 / x 16 Device Status M = Motorola Qualified Device S = Custom Product (Copper) E = Engineering Sample X = Pre–Qualified Device M 3 8 Die Revision Match Die Rev of Supplier, If No Supplier then, O = Original Rev. A = 1st Gen. B = 2nd Gen. C = 3rd Gen. 4 F 5 8 Voltage 5 = 5.0 V 3 = 3.3 V 2 = 2.7 V 1 = 1.8 V 9 = 0.9 V Power Supply 29F = 1 Power Supply 28F = 2 Power Supplies 2 2 Digit 1 0 6 8 A 9 3 10 Lead Frame Blank = MTB (alloy) 0 7 K 11 B 12 1 2 14 15 R 16 Temperature/Burn–In Blank = Comm. with Burn–In K = Indust. with Burn–In F = Extend. with Burn–In C = Comm. without Burn–In I = Indust. without Burn–In E = Extend. without Burn–In T 13 FLASH DINOR I COMPONENT PART NOMENCLATURE Architecture F = Flashfile U = Top Boot Block B = Bottom Boot Block S = Serial Speed 12 = 120 ns 10 = 100 ns 80 = 80 ns Package J = SOJ T = TSOP R = Reverse TSOP A = 0.65 mm CSP Shipping R = Tape and Reel Blank = Tray J = Tube