SYNC-POWER SPP3401WS23RG

SPP3401W
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP3401W is the P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹
-30V/-4.0A,RDS(ON)= 70mΩ@VGS=- 10V
‹
-30V/-3.2A,RDS(ON)= 90mΩ@VGS=-4.5V
‹
-30V/-1.2A,RDS(ON)= 115mΩ@VGS=-2.5V
‹
Super high density cell design for extremely low
RDS (ON)
‹
Exceptional on-resistance and maximum DC
current capability
‹
SOT-23 package design
PIN CONFIGURATION(SOT-23)
PART MARKING
S41WYW
2011/06/01 Preliminary
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SPP3401W
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
Symbol
Description
1
G
Gate
2
S
Source
3
D
Drain
ORDERING INFORMATION
Part Number
Package
SPP3401WS23RG
SOT-23
Part
Marking
S41W
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※ SPP3401WS23RG : Tape Reel ; Pb – Free
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
-30
V
Gate –Source Voltage
VGSS
±12
V
Continuous Drain Current(TJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
TA=25℃
TA=70℃
ID
-4.0
-3.2
A
IDM
-15
A
IS
-1.0
A
PD
1.25
0.8
W
TJ
150
℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
120
℃/W
2011/06/01 Preliminary
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SPP3401W
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
Gate Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
-0.4
VDS≦-5V,VGS=-10V
IS=-1.0A,VGS=0V
V
-1.0
VDS=0V,VGS=±12V
VDS=-24V,VGS=0V
VDS=-24V,VGS=0V
TJ=55℃
VGS=- 10V,ID=-4.0A
RDS(on) VGS=-4.5V,ID=-3.2A
VGS=-2.5V,ID=-1.2A
gfs
VDS=-5.0V,ID=-4.0A
VSD
-30
±100
-1
-10
nA
uA
-10
A
0.068
0.088
0.118
10
0.077
0.099
0.127
-0.8
-1.2
10
18
Ω
S
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
55
td(on)
8
18
8
18
25
50
25
35
Turn-On Time
Turn-Off Time
2011/06/01 Preliminary
tr
td(off)
tf
VDS=-15V,VGS=-10V
ID≡-4.0A
nC
1.6
3.0
VDS=-15V,VGS=0V
f=1MHz
VDD=-15V,RL=15Ω
ID≡-1.0A,VGEN=-10V
RG=6Ω
450
pF
95
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ns
SPP3401W
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2011/06/01 Preliminary
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SPP3401W
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2011/06/01 Preliminary
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SPP3401W
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2011/06/01 Preliminary
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SPP3401W
P-Channel Enhancement Mode MOSFET
SOT-23 PACKAGE OUTLINE
2011/06/01 Preliminary
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SPP3401W
P-Channel Enhancement Mode MOSFET
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mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information
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SYNC Power Corporation
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NanKang District (NKSP), Taipei, Taiwan 115
Phone: 886-2-2655-8178
Fax: 886-2-2655-8468
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2011/06/01 Preliminary
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