TSC TSM2N7002K_13

TSM2N7002K
60V N-Channel MOSFET
SOT-23
SOT-323
Pin Definition:
1. Gate
2. Source
3. Drain
PRODUCT SUMMARY
VDS (V)
60
Features
●
Low On-Resistance
●
ESD Protected 2KV
●
High Speed Switching
●
Low Voltage Drive
RDS(on) (max)
ID (mA)
2 @ VGS = 10V
300
4 @ VGS = 4.5V
200
Block Diagram
Ordering Information
Part No.
Package
Packing
TSM2N7002KCX RFG
TSM2N7002KCU RFG
SOT-23
SOT-323
3Kpcs / 7” Reel
3Kpcs / 7” Reel
Note: “G” denotes for Halogen Free
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
Continuous @ TA=25ºC
ID
300
Pulsed
IDM
800
Continuous @ TA=25ºC
IDR
300
Pulsed
IDMR
800
Maximum Power Dissipation
PD
300
Operating Junction Temperature
TJ
+150
o
TJ, TSTG
-55 to +150
o
Symbol
Limit
Unit
TL
5
S
RӨJA
350
Drain Current
Drain Reverse Current
Operating Junction and Storage Temperature Range
mA
mA
mW
C
C
Thermal Performance
Parameter
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
o
C/W
Notes:
a. Pulse width ≤300us, Duty cycle ≤2%
b. When the device is mounted on a glass epoxy board with area measuring 1 x 0.75 x 0.62 inch.
c. The power dissipation of the package may result in a continuous drain current.
1/7
Version: D13
TSM2N7002K
60V N-Channel MOSFET
Electrical Specifications (Ta = 25oC, unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS =0V, ID =250µA
BVDSS
60
--
--
V
Gate Threshold Voltage
VDS =VGS, ID =250µA
VGS(TH)
1.0
1.5
2.5
V
Gate Body Leakage
VGS =±20V, VDS =0V
IGSS
--
--
±10
uA
Zero Gate Voltage Drain Current
VDS =60V, VGS =0V
IDSS
--
--
1.0
uA
--
1.2
2
--
2
4
Drain-Source On-State Resistance
VGS =10V, ID =300mA
VGS =4.5V, ID =200mA
RDS(ON)
Ω
Forward Transconductance
VDS =10V, ID =200mA
gfs
100
--
--
mS
Diode Forward Voltage
IS =300mA, VGS =0V
VSD
--
0.8
1.4
V
Qg
--
0.4
0.6
nC
b
Dynamic
Total Gate Charge
Input Capacitance
VDS =10V, ID = 250mA,
VGS =4.5V
Ciss
--
30
--
Coss
--
6
--
Crss
--
2.5
--
td(on)
--
--
25
ID =200mA, VGEN =10V,
Turn-Off Delay Time
td(off)
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
--
--
35
Output Capacitance
Reverse Transfer Capacitance
Switching
VDS = 25V, VGS = 0V,
f = 1.0MHz
pF
c
Turn-On Delay Time
VDD =30V, RG =10Ω
2/7
nS
Version: D13
TSM2N7002K
60V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/7
Version: D13
TSM2N7002K
60V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/7
Version: D13
TSM2N7002K
60V N-Channel MOSFET
SOT-23 Mechanical Drawing
DIM
A
A1
bp
C
D
E
e
e1
HE
LP
Q
V
W
SOT-23 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
1.00 BSC
0.039 BSC
-0.10
-0.004
0.37
0.42
0.014
0.016
0.15
0.09
0.005
0.004
2.80
3.00
0.118
0.110
1.20
1.40
0.047
0.055
1.9 BSC
0.075 BSC
0.95 BSC
0.037 BSC
2.35
2.45
0.093
0.096
0.15
0.45
0.005
0.018
0.022
0.45
0.55
0.018
0.2 BSC
0.007 BSC
0.1 BSC
0.004 BSC
Marking Diagram
702
x
= TSM2N7002KCX Device Code
= Internal Code
5/7
Version: D13
TSM2N7002K
60V N-Channel MOSFET
SOT-323 Mechanical Drawing
DIM
A
A1
bp
C
D
E
e
e1
HE
Lp
Q
W
SOT-323 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
0.80
1.10
0.031
0.043
-0.10
-0.004
0.30
0.40
0.012
0.016
0.10
0.25
0.004
0.010
1.80
2.20
0.071
0.087
1.15
1.35
0.045
0.053
1.30 BSC
0.051 BSC
0.65 BSC
0.026 BSC
2.00
2.20
0.079
0.087
0.15
0.45
0.006
0.018
0.20 BSC
0.007 BSC
0.20 BSC
0.007 BSC
Marking Diagram
72K
= TSM2N7002KCU Device Code
6/7
Version: D13
TSM2N7002K
60V N-Channel MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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7/7
Version: D13