TSM12N02 20V N-Channel MOSFET TO-252 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 20 Features ● ● ID (A) 30 @ VGS = 10V 8 40 @ VGS = 4.5V 6 Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application ● ● Load Switch PA Switch Ordering Information Part No. TSM12N02CP RO Package Packing TO-252 T&R N-Channel MOSFET Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current, VGS @4.5V. ID 12 A Pulsed Drain Current, VGS @4.5V IDM 30 A IS 1.7 A Continuous Source Current (Diode Conduction) a,b o Maximum Power Dissipation Ta = 25 C PD o Ta = 70 C Operating Junction Temperature W 23 +150 o TJ, TSTG -55 to +150 o Symbol Limit 10 TJ Operating Junction and Storage Temperature Range 60 C C Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Case Thermal Resistance TL RӨJC Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Maximum DC current limited by the package b. Surface Mounted on 1” x 1” FR4 Board, t ≤ 10 sec. RӨJA 1/6 Unit S 2.2 o 50 o C/W C/W Version: A07 TSM12N02 20V N-Channel MOSFET Electrical Specifications Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 20 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 0.6 -- -- V Gate Body Leakage VGS = ±12V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 20V, VGS = 0V IDSS -- -- 1.0 uA On-State Drain Current VDS ≥5V, VGS = 10V ID(ON) 12 -- -- A -- 30 40 -- 21 30 Drain-Source On-State Resistance VGS = 4.5V, ID = 6A VGS = 10V, ID = 8A RDS(ON) mΩ Forward Transconductance VDS = 10V, ID = 6A gfs 7 13 -- S Diode Forward Voltage IS = 1.7A, VGS = 0V VSD -- -- 1.2 V Qg -- 4.86 -- Qgs -- 0.92 -- Qgd -- 1.4 -- Ciss -- 562 -- Coss -- 106 -- Crss -- 75 -- td(on) -- 8.1 -- tr -- 9.95 -- td(off) -- 21.85 -- -- 5.35 -- Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10V, ID = 6A, VGS = 4.5V VDS = 8V, VGS = 0V, f = 1.0MHz nC pF c Switching Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 10V, ID = 1A, VGEN = 10V, RG = 16Ω Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/6 nS Version: A07 TSM12N02 20V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25 oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/6 Version: A07 TSM12N02 20V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25 oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 4/6 Version: A07 TSM12N02 20V N-Channel MOSFET SOT-252 Mechanical Drawing TO-252 DIMENSION DIM 5/6 MILLIMETERS MIN MAX INCHES MIN MAX A 2.3BSC 0.09BSC A1 4.6BSC 0.18BSC B 6.80 7.20 0.268 0.283 C 5.40 5.60 0.213 0.220 D 6.40 6.65 0.252 0.262 E 2.20 2.40 0.087 0.094 F 0.00 0.20 0.000 0.008 G 5.20 5.40 0.205 0.213 G1 0.75 0.85 0.030 0.033 G2 0.55 0.65 0.022 0.026 H 0.35 0.65 0.014 0.026 I 0.90 1.50 0.035 0.059 J 2.20 2.80 0.087 0.110 K 0.50 1.10 0.020 0.043 L 0.90 1.50 0.035 0.059 M 1.30 1.70 0.051 0.67 Version: A07 TSM12N02 20V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: A07