ET- 7N60
N-Channel MOSFET
Features
■
RDS(on) (Max 1.2 Ω )@VGS=10V
■
Gate Charge (Typical 28nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
■
■
■
●
◀
1. Gate{
▲
●
●
{
General Description
This Power MOSFET is manufactured advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Absolute Maximum Ratings
Symbol
VDSS
ID
2. Drain
{
Symbol
3. Source
TO-220F
2
1
3
* Drain current limited by junction temperature)
(
Value
Units
Drain to Source Voltage
Parameter
600
V
Continuous Drain Current(@TC = 25°C)
7.0*
A
Continuous Drain Current(@TC = 100°C)
4.4*
A
28*
A
±30
V
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
(Note 1)
EAS
Single Pulsed Avalanche Energy
(Note 2)
420
mJ
EAR
Repetitive Avalanche Energy
(Note 1)
14.7
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
48
W
PD
TSTG, TJ
TL
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
0.38
W/°C
- 55 ~ 150
°C
300
°C
Thermal Characteristics
Symbol
Value
Parameter
Min.
Typ.
Max.
Units
RθJC
Thermal Resistance, Junction-to-Case
-
-
2.6
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
°C/W
1
BEIJING ESTEK ELECTRONICS CO.,LTD
ET- 7N60
Electrical Characteristics
Symbol
( TC = 25 °C unless otherwise noted )
Parameter
Test Conditions
Min
Typ
Max
Units
600
-
-
V
-
0.6
-
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
Δ BVDSS/
Δ TJ
Breakdown Voltage Temperature
coefficient
ID = 250uA, referenced to 25 °C
IDSS
Drain-Source Leakage Current
IGSS
VDS = 600V, VGS = 0V
-
-
10
uA
VDS = 480V, TC = 125 °C
-
-
100
uA
Gate-Source Leakage, Forward
VGS = 30V, VDS = 0V
-
-
100
nA
Gate-source Leakage, Reverse
VGS = -30V, VDS = 0V
-
-
-100
nA
2.0
-
4.0
V
-
0.85
1.2
Ω
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250uA
RDS(ON)
Static Drain-Source On-state Resistance
VGS =10 V, ID = 3.5A
Dynamic Characteristics
Ciss
Input Capacitance
-
1100
1500
Coss
Output Capacitance
-
110
150
Crss
Reverse Transfer Capacitance
-
12
16
-
15
40
-
30
70
-
110
230
-
40
90
-
28
37
-
5
-
-
11
-
Min.
Typ.
Max.
-
-
7.0
-
-
28
IS =7.0A, VGS =0V
-
-
1.4
-
365
-
ns
IS=7.0A, VGS=0V, dIF/dt=100A/us
-
3.4
-
uC
VGS =0 V, VDS =25V, f = 1MHz
pF
Dynamic Characteristics
td(on)
tr
td(off)
tf
Turn-on Delay Time
VDD =300V, ID =7.0A, RG =25Ω
Rise Time
Turn-off Delay Time
(Note 4, 5)
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge(Miller Charge)
VDS =480V, VGS =10V, ID =7.0A
(Note 4, 5)
ns
nC
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
IS
Continuous Source Current
ISM
Pulsed Source Current
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction
Diode in the MOSFET
Unit.
A
V
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 15.7mH, IAS =7A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C
3. ISD ≤ 7A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
2
BEIJING ESTEK ELECTRONICS CO.,LTD