SFP50N06R Silicon N-Channel MOSFET Features � RDS(on)(Max0.023Ω)@VGS=10V � Gate Charge(Typical 25nC) � Maximum Junction Temperature Range(175℃) General Description This Power MOSFET is produced using Winsemi’s trench layout-based process. This technology improves the performances compared with standard parts from various sources . All of these power MOSFET are designed for applications in switching regulators , switching convertors , motor and relay drivers , and drivers for high power bipolar switching transistors demanding high speed and low gate drive power. Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain to Source Voltage 60 V Continuous Drain Current(@TC=25℃) 50 A Continuous Drain Current(@TC=100℃) 35 A IDM Drain Current Pulsed 200 A VGS Gate to Source Voltage ±20 V EAS Single Pulsed Avalanche Energy 493 mJ EAR Repetitive Avalanche Energy 12.0 mJ dv/dt Peak Diode Recovery dv/dt 7.0 V/ns Total Power Dissipation(@TC=25℃) 120 W Derating Factor above25℃ 0.8 W/℃ -55~175 ℃ 150 ℃ ID PD TSTG Operating Junction Temperature TJ Storage Temperature Thermal Characteristics Symbol parameter Min. Value Typ. Max. units RQJC Thermal Resistance, Junction-to-case - - 1.24 ℃/W RQJA Thermal Resistance, Junction-to-Ambient - 0.5 - ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/W Rev.A Aug.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. SFP50N06R Electrical Characteristics TC=25℃ Characteristics Symbol Test Conditions Drain-Source BVDSS VGS=0V, Breakdown Voltage Min Typ Max Units 60 - - V - 0.07 - V/℃ ID=250uA Breakdown Voltage Temperature △BVDSS/△ ID=250uA, coefficient TJ referenced to 25℃ Drain-source Leakage Current IDSS VDS=60V,VGS=0V - - 10 uA VDS=48V,TC=125℃ - - 100 uA VGS=20V,VDS=0V - - 100 nA VGS=-20V,VDS=0V - - -100 nA 2.0 - 4.0 V - 0.018 0.022 Ω Gate-Source Leakage, Forward IGSS Gate-source Leakage, Reverse Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA Static Drain-Source On-state RDS(ON) Resis-tance VGS=10V, ID=25.0A Input Capacitance Ciss VGS=0V,VDS=25V, - 1050 1365 Output Capacitance Coss f=1MHz - 460 600 Reverse Transfer Capacitance Crss - 70 90 Turn-on Delay Time td(on) VDD=30V, - 20 50 Rise Time tr ID=25.0A,RG=25Ω - 100 210 Turn-off Delay Time td(off) Pulse Width≤300us, - 80 170 Fall Time tf Q>50 - 85 180 Total Gate Charge Qg VDS=48V, - 32 42 Gate-source Charge Qgs VGS=10V, - 8 - Gate-Drain Charge(Miller Charge) Qgd ID=50A - 12 - pF ns nC Source-Drain Ratings and Characteristics Characteristics Symbol Test Conditions Maximum Continuous Source- IS - Min Typ Max - - 50 - - 200 Units A Diode Forward Current Maximum Pulsed Source-Diode ISM - Forward Current Diode Forward Voltage VSD IS=50A,VGS=0V - - 1.5 V Reverse Recovery Time trr IS=50A,VGS=0V, - 50 - ns Reverse Recovery Charge Qrr dIF/dt=100A/us - 70 - uC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=230uH,IAS=50A,VDD=50V,RG=25Ω,Starting TJ=25℃ 3.ISD≤50A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃ 2/7 Steady, all for your advance SFP50N06R Fig1.On-State Characteristics Fig3.On Resistance Variation vs. Drain Current and Gate Voltage Fig5.Capacitance Characteristics Fig2.Transfer Characteristics Fig4.On State Current vs. Allowable Case Temperature Fig6.Gate charge Characteristics 3/7 Steady, all for your advance SFP50N06R Fig7.Breakdown Voltage Variation Fig8.On-Resistance Variation vs.Junction temperature Fig9.Maximum safe Operating Area vs.Junction Temperature Fig10.Maximum Drain Current vs.Case Temperature Fig11.Transient thermal Response Curve 4/7 Steady, all for your advance SFP50N06R Fig12.Gate Charge Test Circuit&Waveforms Fig12.Gate Charge Test Circuit& Waveforms Fig13.Switching Time Test Circuit&Waveforms Fig14.Unclamped Inductive Switching Test Circuit & Waveform 5/7 Steady, all for your advance SFP50N06R Fig15. Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, all for your advance SFP50N06R To-220 Package Dimension Unit:mm 7/7 Steady, all for your advance