SAMWIN SW P 11N60 General Description Features zN-Channel MOSFET zBVDSS (Minimum) zRDS(ON) (Maximum) zID zQg (Typical) zPD (@TC=25 ℃) This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. : 600 V : 0.7 ohm : 11 A : 56 nc : 150 W D G TO-220 SW P 11N60 S Absolute Maximum Ratings Symbol VDSS ID IDM Parameter Value Units Drain to Source Voltage 600 V Continuous Drain Current (@Tc=25℃) 11 A Continuous Drain Current (@Tc=100℃) 6.3 A 40 A ±30 V Drain Current Pulsed (Note 1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) 260 mJ EAR Repetitive Avalanche Energy (Note 1) 3.5 mJ Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Total Power Dissipation (@Tc=25℃) 150 W Derating Factor above 25℃ 0.92 W/℃ -55 ~ +150 ℃ 300 ℃ dv/dt PD TSTG,TJ TL Operating junction temperature &Storage temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. Thermal Characteristics Value Symbol Parameter Units Min Typ Max RθJC Thermal Resistance, Junction-to-Case - - 1.09 ℃/ W RθCS Thermal Resistance, Case-to-Sink - - - ℃/ W RθJA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/ W 1/6 REV 2.01 07.06.05 SAMWIN Electrical Characteristics SW P 11N60 (Tc=25℃ unless otherwise noted) Value Symbol Parameter Units Test Conditions Min Typ Max 600 - - V Off Characteristics BVDSS Drain- Source Breakdown Voltage VGS=0V,ID=250uA △BVDSS/△ Tj Breakdown Voltage Temperature coefficient ID=250uA,referenced to 25℃ - 0.4 - V/℃ IDSS Drain-Source Leakage Current VDS=600V, VGS=0V，Tc=25℃ - - 1 uA IDSS Drain-Source Leakage Current VDS=480V,VGS=0V,Tc=125℃ - - 50 uA Gate-Source Leakage Current VGS=20V,VDS=0V - - 10 nA Gate-Source Leakage Reverse VGS=--20V, VDS=0V - - -10 nA IGSS On Characteristics VGS(th) Gate Threshold Voltage VDS=VGS,ID=250uA 3.0 3.75 4.5 V RDS(ON) Static Drain-Source On-state Resistance VGS=10V,ID=5.5A - 0.65 0.7 ohm - 1740 - 195 - 49 - - 22.5 - - 18.5 - - 55 - - 31.5 - 59 - 10 - - 32 - Min. Typ. Max. - - 11 - - 40 Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V,VDS=25V, f=1MHz pF Dynamic Characteristics td(on) tr td(off) tf Qg Qgs Qgd Symbol Turn-on Delay Time Rise Time Turn-off Delay Time VDD=300V,ID=5.0A RG=4.7ohm (Note4,5) Fall Time Total Gate Charge Gate-Source Charge VDS=480V,VGS=10V, ID=10A (Note4,5) Gate-Drain Charge (Miller Charge) Parameter Test Conditions Integral Reverse p-n Junction Diode in the MOSFET ns nc Unit. IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage IS=10A,VGS=0V - - 1.6 V trr Reverse Recovery Time IS=10A,VGS=0V, dIF/dt=100A/us - 460 - ns - 4.2 - uc Qrr Reverse Recovery Charge ※NOTES 1. Repeativity rating: pulse width limited by junction temperature 2. L=45mH,IAS=10A,VDD=50V,RG=25ohm, Starting TJ=25℃ 3. ISD≤11A,di/dt≤200A/us,VDD=480V, Starting TJ=25℃ 4. Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. REV 2.01 A 2/6 07.06.05 SAMWIN REV 2.01 SW P 11N60 07.06.05 SAMWIN REV 2.01 SW P 11N60 07.06.05 SAMWIN REV 2.01 SW P 11N60 07.06.05 SAMWIN SW P 11N60 VGS Same Type as DUT 50KΩ Qg 10V 200nF 300nF Qgd Qgs VDS VGS DUT 1mA Charge Fig 12. Gate Charge test Circuit & Waveforms RL VDS VDD (0.5 rated VDS) 10V Pulse Generator RG DUT VDS Vin 90% 10% tf td(on) tr ton td(off) toff Fig 13. Switching test Circuit & Waveforms L 1 BVDSS EAS= --- LLIAS2--------------2 BVDSS-VDD VDS VDD BVDSS IAS RG VDD DUT ID(t) VDS(t) 10V tp Time Fig 14. Unclamped Inductive Switching test Circuit & Waveforms 5/6 REV 2.01 07.06.05 SAMWIN SW P 11N60 + DUT VDS __ L Driver VDD RG Same Type as DUT VGS ● ● VGS (Driver) dv/dt controlled by RG Is controlled by pulse period Gate Pulse Width D = --------------------------Gate Pulse Period 10V IFM,Body Diode Forward Current di/dt IS (DUT) IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VDD Vf Body Diode Forward Voltage Drop Fig 15. Peak Diode Recovery dv/dt test Circuit & Waveforms 6/6 REV 2.01 07.06.05