IRF AUIRF9952Q

AUTOMOTIVE GRADE
PD - 97647
AUIRF9952Q
HEXFET® Power MOSFET
Features
l
l
l
l
l
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l
Advanced Planar Technology
Low On-Resistance
Dual N and P Channel MOSFET
Dynamic dV/dT Rating
150°C Operating Temperature
Fast Switching
Full Avalanche Rated
Repetitive Avalanche Allowed up to
Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified*
S1
N-CHANNEL MOSFET
1
8
G1
2
7
D1
S2
3
6
D2
4
5
D2
G2
P-CHANNEL MOSFET
Top View
N-CH P-CH
D1
V(BR)DSS
30V
-30V
RDS(on) max.
0.10Ω 0.25Ω
ID
3.5A
-2.3A
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and
a wide variety of other applications.
SO-8
AUIRF9952Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (T A) is 25°C, unless otherwise specified.
Max.
Parameter
N-Channel
Units
P-Channel
ID @ TA = 25°C
10 Sec. Pulsed Drain Current, VGS @ 10V
3.5
-2.3
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
2.8
-1.8
IDM
Pulsed Drain Current
16
PD @TA = 25°C
Power Dissipation
PD @TA = 70°C
VGS
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
dv/dt
c
-10
2.0
c
Repetitive Avalanche Energy c
Peak Diode Recovery dv/dt d
TJ
Operating Junction and
TSTG
Storage Temperature Range
W
1.3
0.016
± 20
e
A
W/°C
V
44
57
mJ
2.0
-1.3
A
-5.0
V/ns
0.25
mJ
5.0
-55 to + 150
°C
Thermal Resistance
Parameter
RθJA
g
Junction-to-Ambient (PCB Mount, steady state)
Typ.
–––
Max.
Units
62.5
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
04/25/11
AUIRF9952Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
N-Ch
V(BR)DSS
Drain-to-Source Breakdown Voltage
P-Ch
N-Ch
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
P-Ch
N-Ch
RDS(on)
Static Drain-to-Source On-Resistance
P-Ch
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-P
Min.
30
-30
–––
–––
–––
–––
–––
–––
1.0
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.015
0.015
0.08
0.12
0.165
0.290
–––
–––
12
2.4
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V V GS = 0V, ID = 250μA
–––
V GS = 0V, ID =-250μA
––– V/°C Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
–––
V GS = 10V, ID = 2.2A
0.10
0.15
Ω V GS = 4.5V, ID = 1.0A
V GS = -10V, ID = -1.0A
0.250
0.400
V GS = -4.5V, ID = -0.5A
3.0
V V DS = VGS, ID = 250μA
V DS = VGS, ID = -250μA
-3.0
–––
S V DS = 15V, ID = 3.5A
V DS = -15V, ID = -2.3A
–––
V DS = 24V, VGS = 0V
2.0
-2.0
μA V DS = -24V, VGS = 0V
V DS = 24V, VGS = 0V, TJ = 125°C
25
V DS = -24V, VGS = 0V, TJ = 125°C
-25
-100
V GS = 20V
nA
V GS = -20V
100
f
f
f
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
–––
–––
Typ.
6.9
6.1
Max. Units
Conditions
14
N-Channel
ID = 1.8A, VDS = 10V, VGS = 10V
12
nC
2.0
3.4
P-Channel
3.5
ID =-2.3A, VDS =-10V, VGS =-10V
–––
–––
–––
1.0
1.7
1.8
–––
–––
–––
–––
1.1
6.2
9.7
8.8
2.2
12
19
18
–––
–––
–––
–––
14
13
20
3.0
28
26
40
6.0
–––
–––
–––
6.9
190
190
14
–––
–––
–––
–––
–––
120
110
61
–––
–––
–––
–––
54
–––
f
N-Channel
VDD= 10V, ID = 1.0A RG = 6.0Ω
RD = 10Ω
ns
P-Channel
VDD=-10V, ID =-1.0A RG = 6.0Ω
RD = 10Ω
N-Channel
V GS = 0V, VDS = 15V, ƒ = 1.0MHz
pF
P-Channel
V GS = 0V, VDS = -15V, ƒ = 1.0MHz
f
Diode Characteristics
Parameter
IS
ISM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
c
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min.
Typ.
N-Ch
–––
–––
Max. Units
1.7
P-Ch
–––
–––
-1.3
N-Ch
–––
–––
16
P-Ch
–––
–––
16
Conditions
A
e
e
V TJ = 25°C, IS = 1.25A, VGS = 0V
N-Ch ––– 0.82 1.2
TJ = 25°C, IS = -1.25A, VGS = 0V
P-Ch ––– -0.82 -1.2
N-Ch –––
27
53
ns N-Channel
TJ = 25°C,IF =1.25A, di/dt = 100A/μs
27
54
P-Ch –––
N-Ch –––
28
57
nC P-Channel
TJ = 25°C,IF =-1.25A, di/dt = 100A/μs
31
62
P-Ch –––
N-P Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
f
Notes:
 Repetitive rating; pulse width limited by
ƒ N-Channel Starting TJ = 25°C, L = 22mH RG = 25Ω, IAS = 2.0A.
max. junction temperature. ( See fig. 23 )
(See Figure 12)
‚ N-Channel ISD ≤ 2.0A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
P-Channel Starting TJ = 25°C, L = 67mH RG = 25Ω, IAS = -1.3A.
TJ ≤ 150°C.
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
P-Channel ISD ≤ -1.3A, di/dt ≤ 84A/µs, VDD ≤ V(BR)DSS, … Surface mounted on FR-4 board, t ≤ 10sec.
TJ ≤ 150°C.
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2
AUIRF9952Q
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device
Model
RoHS Compliant
†
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
SO-8
MSL1
†††
†††
Class Q1(N) = M1A (+/- 50V) , Q2(P) = M1A (+/- 50V)
AEC-Q101-002
†††
†††
Class Q1(N) = H0 (+/- 150V) , Q2(P) = H0 (+/- 150V)
AEC-Q101-001
†††
†††
Class Q1(N) = C4 (+/- 1000V) , Q2(P) = C4 (+/- 1000V)
AEC-Q101-005
Yes
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
††† Highest passing voltage.
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3
AUIRF9952Q
100
N-Channel
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
I D, Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10
3.0V
20μs PULSE WIDTH
TJ = 25°C
A
1
0.1
1
10
3.0V
20μs PULSE WIDTH
TJ = 150°C
A
1
10
0.1
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
Fig 2. Typical Output Characteristics
100
ISD , Reverse Drain Current (A)
100
I D , Drain-to-Source Current (A)
1
VDS , Drain-to-Source Voltage (V)
TJ = 25°C
10
TJ = 150°C
V DS = 10V
20μs PULSE WIDTH
1
3.0
3.5
4.0
4.5
5.0
5.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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A
6.0
10
TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
0.4
0.6
0.8
1.0
1.2
A
1.4
VSD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
4
AUIRF9952Q
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
RDS (on) , Drain-to-Source On Resistance (Ω)
N-Channel
ID = 2.2A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
0.12
0.10
0.08
0
TJ , Junction Temperature ( °C)
E AS , Single Pulse Avalanche Energy (mJ)
RDS (on) , Drain-to-Source On Resistance (Ω)
0.14
0.12
0.10
I D = 3.5A
0.06
0.04
0.02
0.00
6
9
12
V GS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
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4
6
8
10
12
A
Fig 6. Typical On-Resistance Vs. Drain
Current
0.16
3
2
I D , Drain Current (A)
Fig 5. Normalized On-Resistance
Vs. Temperature
0
VGS = 10V
0.06
0.04
80 100 120 140 160
0.08
VGS = 4.5V
15
A
100
TOP
BOTTOM
80
ID
0.89A
1.6A
2.0A
60
40
20
A
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
5
AUIRF9952Q
350
20
250
Ciss
200
Coss
VGS , Gate-to-Source Voltage (V)
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
300
C, Capacitance (pF)
N-Channel
150
Crss
100
50
0
1
10
100
A
ID = 1.8A
VDS = 10V
16
12
8
4
0
0
2
4
6
8
10
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Thermal Response (Z thJA )
100
0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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6
AUIRF9952Q
P-Channel
100
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
10
1
-3.0V
20μs PULSE WIDTH
TJ = 25°C
A
0.1
0.1
1
10
1
-3.0V
20μs PULSE WIDTH
TJ = 150°C
A
0.1
10
0.1
-VDS , Drain-to-Source Voltage (V)
Fig 12. Typical Output Characteristics
10
Fig 13. Typical Output Characteristics
100
100
-ISD , Reverse Drain Current (A)
-ID , Drain-to-Source Current (A)
1
-VDS , Drain-to-Source Voltage (V)
10
TJ = 25°C
T J = 150°C
1
VDS = -10V
20μs PULSE WIDTH
0.1
3.0
4.0
5.0
6.0
7.0
8.0
-VGS , Gate-to-Source Voltage (V)
Fig 14. Typical Transfer Characteristics
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A
10
TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
0.4
0.6
0.8
1.0
1.2
-VSD , Source-to-Drain Voltage (V)
Fig 15. Typical Source-Drain
Diode
Forward Voltage
A
1.4
7
AUIRF9952Q
RDS(on) , Drain-to-Source On Resistance ( Ω )
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
P-Channel
ID = -1.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
2.5
2.0
1.5
VGS = -4.5V
1.0
0.5
VGS = -10V
0.0
80 100 120 140 160
0.0
TJ , Junction Temperature ( °C)
2.0
3.0
150
I D = -2.3A
0.20
0.00
3
6
9
12
-V GS , Gate-to-Source Voltage (V)
Fig 18. Typical On-Resistance Vs. Gate
Voltage
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15
A
EAS , Single Pulse Avalanche Energy (mJ)
0.60
0
5.0
A
Fig 17. Typical On-Resistance Vs. Drain
Current
0.80
0.40
4.0
-I D , Drain Current (A)
Fig 16. Normalized On-Resistance
Vs. Temperature
RDS(on) , Drain-to-Source On Resistance ( Ω )
1.0
ID
-0.58A
-1.0A
BOTTOM -1.3A
TOP
120
90
60
30
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 19. Maximum Avalanche Energy
Vs. Drain Current
8
AUIRF9952Q
P-Channel
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
-VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
400
300
Ciss
Coss
200
Crss
100
0
1
10
100
A
ID = -2.3A
VDS =-10V
16
12
8
4
0
0
2
4
6
8
10
QG , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
Fig 21. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 20. Typical Capacitance
Vs.
Drain-to-Source Voltage
Thermal Response (Z thJA )
100
0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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9
AUIRF9952Q
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
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SO-8 Part Marking
Notes:
1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
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10
AUIRF9952Q
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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11
AUIRF9952Q
Ordering Information
Base part
number
AUIRF9952Q
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Package Type
Standard Pack
SO-8
Form
Tube
Tape and Reel
Complete Part Number
Quantity
95
4000
AUIRF9952Q
AUIRF9952QTR
12
AUIRF9952Q
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and
services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU”
prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and
process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order
acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with
IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support
this warranty. Except where mandated by government requirements, testing of all parameters of each product is not
necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration
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with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation.
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Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product
or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive
business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into
the body, or in other applications intended to support or sustain life, or in any other application in which the failure of
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IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
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