Ordering number : EN8205A CPH5517 Bipolar Transistor http://onsemi.com (–)50V, (–)3A, Low VCE(sat) Complementary Dual CPH5 Applications • relay drivers, lamp drivers, motor drivers Features • • • Composite type with a PNP/NPN transistor contained in package, facilitating high-density mounting The CPH5517 consists of two chips which are equivalent to the CPH3116 and the CPH3216, respectively Ultrasmall package permitting applied sets to be small and slime (mounting height : 0.9mm) Specifications ( ): PNP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Ratings Unit (--50)60 V (--)50 V VEBO IC (--)5 V (--)1.0 A Collector Dissipation ICP IB PC Junction Temperature Tj Storage Temperature Tstg Base Current Conditions VCBO VCEO (--)3 A (--)200 Mounted on a ceramic board (600mm2×0.8mm) 1unit mA 0.9 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Product & Package Information unit : mm (typ) 7017A-008 • Package : CPH5 • JEITA, JEDEC : SC-74A, SOT-25 • Minimum Packing Quantity : 3,000 pcs./reel 5 4 CPH5517-TL-E 0.15 2.9 3 Packing Type : TL Marking LOT No. EM 0.05 1.6 2.8 0.2 0.6 Package Dimensions 0.9 0.2 0.6 TL 1 0.95 2 0.4 1 : Collector1 2 : Collector2 3 : Emitter2 4 : Base Common 5 : Emitter1 Electrical Connection 5 4 3 CPH5 1 Semiconductor Components Industries, LLC, 2013 September, 2013 2 62012 TKIM/21505 TSIM TB-00001151 No.8205-1/8 CPH5517 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Conditions ICBO IEBO VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A Gain-Bandwidth Product hFE fT VCE=(--)2V, IC=(--)100mA VCE=(--)10V, IC=(--)300mA Output Capacitance Cob VCB=(--)10V, f=1MHz Emitter Cutoff Current DC Current Gain Ratings min VBE(sat) V(BR)CBO Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time V(BR)CEO V(BR)EBO ton tstg tf Fall Time μA (--)0.1 μA 560 MHz (9)6 (--280) VCE(sat) IC=(--)500mA, IB=(--)10mA IC=(--)10μA, IE=0A IC=(--)1mA, RBE=∞ See specified Test Circuit. pF (--430) mV mV 130 190 (--145) (--220) mV 90 135 mV (--)0.81 (--)1.2 (--50)60 IE=(--)10μA, IC=0A Unit (--)0.1 420 IC=(--)300mA, IB=(--)6mA Base-to-Emitter Saturation Voltage max 200 IC=(--)500mA, IB=(--)10mA Collector-to-Emitter Saturation Voltage typ V V (--)50 V (--)5 V (36)38 ns (173)332 ns (28)40 ns Switching Time Test Circuit IB1 PW=20μs DC≤1% IB2 OUTPUT INPUT VR RB 24Ω + 50Ω 100μF + 470μF VBE= --5V VCC=25V 20IB1= --20IB2= IC=500mA For PNP, the polarity is reversed. Ordering Information Device CPH5517-TL-E Package Shipping memo CPH5 3,000pcs./reel Pb Free No.8987-2/7 CPH5517 IC -- VCE A 40mA --1 0mA Collector Current, IC -- mA --800 --8mA --6mA --600 --4mA --400 --2mA --200 IB=0mA 0 0 --0.2 --0.4 --0.6 Collector-to-Emitter Voltage, VCE -- V IC -- VBE --1.0 IB=0mA 0.2 [PNP] Collector Current, IC -- A --0.6 --0.5 --0.4 0.6 0.8 1.0 IC -- VBE 1.0 0.8 --0.7 0.4 Collector-to-Emitter Voltage, VCE -- V IT01643 Ta=7 5°C 25°C --25°C Collector Current, IC -- A 200 --0.8 IT01644 [NPN] VCE=2V 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V hFE -- IC 1000 5 5 DC Current Gain, hFE --25°C 100 7 5 2 3 5 7 --1.0 2 IT01647 f T -- IC [PNP] [NPN] VCE=2V Ta=75°C --25°C 25°C 2 3 5 7 0.1 2 3 5 7 Gain-Bandwidth Product, f T -- MHz 1000 7 5 3 2 100 7 5 2 3 IT01648 f T -- IC 5 [NPN] VCE=10V 3 2 1.0 Collector Current, IC -- A VCE= --10V 3 3 2 --0.01 10 0.01 3 Collector Current, IC -- A 5 hFE -- IC 5 2 2 1.2 IT01646 7 3 7 --0.1 1.0 100 2 5 0.8 3 3 3 0.6 7 Ta=75°C 2 0.4 Base-to-Emitter Voltage, VBE -- V 1000 VCE= --2V 25°C 10 --0.01 0.2 IT01645 3 2 0 --1.2 [PNP] 7 DC Current Gain, hFE 2mA 0 0 Gain-Bandwidth Product, f T -- MHz 4mA 400 0.9 --0.1 6mA 600 --0.9 --0.2 8mA 0 VCE= --2V --0.3 30mA 800 --1.0 --0.8 [NPN] 10mA Ta=7 5°C 25°C --25°C m --20 IC -- VCE 1000 20mA --30 [PNP] mA 50mA 0 --4 mA --5 0 Collector Current, IC -- mA mA --1000 2 1000 7 5 3 2 100 7 5 3 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A 7 --1.0 2 3 IT01649 2 0.01 2 3 5 7 0.1 2 3 5 7 Collector Current, IC -- A 1.0 2 3 IT01650 No.8205-3/8 CPH5517 Cob -- VCB 100 100 Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 5 3 2 10 7 5 3 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC --1.0 2 10 7 5 5 7 0.1 5 7 --100 IT01651 2 --0.1 7 Ta 5 3 °C =75 C 2 5° C --25° 2 --0.01 --0.01 2 3 5 7 2 --0.1 3 5 Collector Current, IC -- A VCE(sat) -- IC --1.0 --1.0 IT01653 5°C --0.1 7 Ta= 7 C 25° 5 C --25° 3 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A VBE(sat) -- IC --10 --1.0 IT01655 2 Ta= --25°C 7 75°C 25°C 3 2 2 [NPN] 2 0.1 7 5 5°C 7 Ta= 3 2 °C 25 C --25° 2 3 5 7 2 0.1 3 3 5 7 --0.1 2 3 Collector Current, IC -- A 5 7 --1.0 IT01657 5 VCE(sat) -- IC 7 1.0 IT01654 [NPN] IC / IB=50 5 3 2 0.1 5°C 7 7 Ta= 5 C 25° C --25° 3 2 2 3 5 7 2 0.1 3 5 VBE(sat) -- IC 10 7 1.0 IT01656 [NPN] IC / IB=50 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 5 7 100 IT01652 IC / IB=20 Collector Current, IC -- A [PNP] 5 3 3 0.01 0.01 7 IC / IB=50 7 --0.1 --0.01 2 VCE(sat) -- IC 1.0 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 5 5 7 10 7 3 --1.0 3 Collector Current, IC -- A [PNP] 5 2 2 5 0.01 0.01 7 IC / IB=50 --0.01 --0.01 5 7 1.0 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 3 1.0 IC / IB=20 5 2 Collector-to-Base Voltage, VCB -- V [PNP] 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 5 7 --0.1 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 Base-to-Emitter Saturation Voltage, VBE(sat) -- V [NPN] f=1MHz 7 7 7 Cob -- VCB [PNP] f=1MHz 5 3 2 1.0 Ta= --25°C 7 5 75°C 25°C 3 2 0.1 0.01 2 3 5 7 0.1 2 3 Collector Current, IC -- A 5 7 1.0 IT01658 No.8987-4/7 CPH5517 ASO 5 [PNP / NPN] Collector Current, IC -- A s IC=1A 1.0 7 5 10 m DC 3 0.1 7 5 2 10 s s op ati on Ta=25°C Single pulse Mounted on a ceramic board (600mm2×0.8mm) For PNP, minus sign is omitted 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Collector-to-Emitter Voltage, VCE -- V [PNP / NPN] 1.2 0m er 2 3 s s 0μ 0μ 10 50 1m 2 Collector Dissipation, PC -- W 3 PC -- Ta 1.4 ICP=3A 1.0 M ou 0.9 nte do 0.8 na ce ram ic 0.6 bo ard (60 0m 0.4 m2 ×0 .8m 0.2 m) 1u nit 0 3 5 7 IT09272 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT01660 No.8205-5/8 CPH5517 Embossed Taping Specification CPH5517-TL-E No.8987-6/7 CPH5517 Outline Drawing CPH5517-TL-E Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No.8205-7/8 CPH5517 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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