2N7002XFB 2N7002XFB NEW PROD UC T OBSOLETE Product

OBSOLETE
2N7002XFB
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
Product Summary
Features and Benefits
RDS(ON)
ID
TA = 25°C
3.0Ω @ VGS = 10V
400mA
4.0Ω @ VGS = 5V
330mA
V(BR)DSS
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NEW PRODUCT
60V
Description and Applications
These N-Channel enhancement mode field effect transistors are
produced using DIODES proprietary, high density, uses advanced
trench technology.These products have been designed to minimize
on-state resistance while provide rugged, reliable, and fast switching
performance.These products are particularly suited for low voltage,
low current applications such as small
•
N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate, 1.2kV HBM
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 1 and 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
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Case: DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
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Load switching
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DFN1006-3
Top View
Top View
Equivalent Circuit
Ordering Information (Note 3)
Part Number
2N7002XFB-7
Notes:
Case
DFN1006-3
Packaging
3000/Tape & Reel
1. No purposefully added lead. Halogen and Antimony Free.
2. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb203 Fire Retardants.
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
Date Code Key
Year
Code
Month
Code
2009
W
Jan
1
2010
X
Feb
2
2N7002XFB
Document number: DS35449 Rev. 2 - 6
Mar
3
2011
Y
Apr
4
May
5
2012
Z
Jun
6
1 of 5
www.diodes.com
2013
A
Jul
7
Aug
8
2014
B
Sep
9
Oct
O
2015
C
Nov
N
Dec
D
September 2011
© Diodes Incorporated
OBSOLETE
2N7002XFB
Maximum Ratings
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
NEW PRODUCT
Continuous Drain Current (Note 4) VGS =
10V
Continuous Drain Current (Note 5) VGS =
10V
Steady
State
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
ID
Value
60
±20
260
210
Units
V
V
ID
400
310
mA
Value
430
290
840
147
-55 to +150
Units
mW
°C/W
mW
°C/W
°C
mA
Thermal Characteristics
Characteristic
Power Dissipation, @TA = 25°C (Note 4)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4)
Power Dissipation, @TA = 25°C (Note 5)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJSA
TJ, TSTG
.
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Body Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
60
-
-
0.1
±10
V
µA
µA
VGS = 0V, ID = 250μA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
1.2
RDS (ON)
-
|Yfs|
VSD
80
-
2.0
3.0
4.0
1.0
V
Static Drain-Source On-Resistance
2.1
2.3
320
0.7
mS
V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 0.115A
VGS =5V, ID = 0.1115A
VDS = 10V, ID = 0.115A
VGS = 0V, IS = 0.115A
Ciss
Coss
Crss
tD(on)
tr
tD(off)
tf
-
25
4,7
2.5
3.27
3.15
12.025
6.29
-
pF
pF
pF
ns
ns
ns
ns
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Ω
Test Condition
VDS = 25V, VGS = 0V, f = 1.0MHz
VDD = 30V, VGEN = 10V,
RGEN = 25Ω,ID = 0.115A
4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
2N7002XFB
Document number: DS35449 Rev. 2 - 6
2 of 5
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September 2011
© Diodes Incorporated
OBSOLETE
2N7002XFB
0.6
1
VGS=10V
0.5
ID, DRAIN CURRENT (A)
VGS=5.0V
VGS=4.5V
0.3
VGS=2.5V
0.2
TA=25° C
TA=-55°C
T A=85°C
0.1
0.1
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig.1 Typical Output Characteristics
0.01
0
5
0.5
1
1.5
2
2.5
3
3.5
VGS, GATE-SOURCE VOLTAGE
Fig. 2 Typical Transfer Characteristics
4
2.4
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Normalized)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.0
0
4.5
4
3.5
3
VGS=5V
2.5
VGS=10V
2
1.5
1
0.5
0
0
0.1
0.2
0.3
0.4
0.5
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Charge
2.2
VGS=10V,
ID=115mA
2
1.8
1.6
VGS=5V,
ID=115mA
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 4 On-Resistance Variation with Temperature
0.6
2
50
1.8
45
CT, JUNCTION CAPACITANCE (pF)
f=1MHz
VGS(TH), GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
TA=150°C
VGS =3.0V
VGS=4.0V
0.4
TA=125°C
VDS= 5.0V
VGS=3.5V
1.6
1.4
ID=1mA
1.2
ID=250µA
1
0.8
0.6
0.4
30
CISS
25
20
15
10
COSS
CRSS
0
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
Document number: DS35449 Rev. 2 - 6
35
5
0.2
2N7002XFB
40
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0
5
10
15
20
VDS, DRAIN-SOURCE VOLTAGE
Fig. 6 Typical Junction Capacitance
25
September 2011
© Diodes Incorporated
OBSOLETE
2N7002XFB
1
TA=125°C
TA=25°C
IS, SOURCE CURRENT (A)
NEW PRODUCT
TA=150°C
0.1
TA=85°C
T A=-55°C
0.01
0.001
0
0.2
0.4
0.6
0.8
1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Diode Forward Voltage vs. Current
1.2
Package Outline Dimensions
A
DFN1006
Dim Min
Max Typ
A
0.47
0.53 0.50
A1
0
0.05 0.03
b1
0.10
0.20 0.15
b2
0.45
0.55 0.50
D
0.95 1.075 1.00
E
0.55 0.675 0.60
e
0.35
⎯
⎯
L1
0.20
0.30 0.25
L2
0.20
0.30 0.25
L3
0.40
⎯
⎯
All Dimensions in mm
A1
D
b1
E
e
b2
L2
L3
L1
Suggested Pad Layout
C
Dimensions
Z
G1
G2
X
X1
Y
C
X1
X
G2
Value (in mm)
1.1
0.3
0.2
0.7
0.25
0.4
0.7
G1
Y
Z
2N7002XFB
Document number: DS35449 Rev. 2 - 6
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September 2011
© Diodes Incorporated
OBSOLETE
2N7002XFB
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
NEW PRODUCT
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
www.diodes.com
2N7002XFB
Document number: DS35449 Rev. 2 - 6
5 of 5
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September 2011
© Diodes Incorporated
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