SS32BF THRU SS320BF Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200V Forward Current - 3.0A SMBF Cathode Band Top View FEATURES 0.145(3.70) 0.137(3.50) • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications 0.087(2.20) 0.075(1.90) 0.174(4.40) 0.166(4.20) 0.012(0.30) 0.006(0.15) 0.055(1.40) 0.043(1.10) 0.047(1.20) 0.028(0.70) MECHANICAL DATA • Case: SMBF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 57 mg / 0.002oz 0.217(5.50) 0.201(5.10) Dimensions in inches and (millimeters) Absolute Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Symbols Parameter SS32BF SS34BF SS36BF SS38BF SS310BF SS312BF SS315BF SS320BF Units Maximum Repetitive Peak Reverse Voltage V RRM 20 40 60 80 100 120 150 200 V Maximum RMS voltage V RMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage V DC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current I F(AV) Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I FSM Max Instantaneous Forward Voltage at 2 A Maximum DC Reverse Current at Rated DC Reverse Voltage VF 80 0.55 IR T a =125°C Typical Thermal Resistance 1） Operating Junction Temperature Range Storage Temperature Range 70 0.70 0.85 V mA RθJA 50 °C/W Tj -55 ~ +125 °C T stg -55 ~ +150 °C 1） P.C.B. mounted with 0.5 X 0.5" (12.7 X 12.7 mm) copper pad areas. 1） Measured 2） A 0.95 0.3 / 5 0.5 5 / T a = 25°C T a =100°C A 3.0 at 1MHz and applied reverse voltage of 4 V D.C. P.C.B. mounted with 0.5 X 0.5" (12.7 X 12.7 mm) copper pad areas. 1 SS32BF THRU SS320BF Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200V Forward Current - 3.0A Fig.2 Typical Reverse Characteristics Instaneous Reverse Current ( μA) Average Forward Current (A) Fig.1 Forward Current Derating Curve 3.5 100LFM 3.0 2.4 1.8 1.2 Single phase half wave resistive or inductive P.C.B mounted on 0.5×0.5"(12.7×12.7mm ) pad areas 0.6 0.0 25 50 75 100 125 150 Lead Temperature (°C) 10 4 T J =100°C 10 3 T J =75°C 10 2 SS32BF/SS34BF SS36BF-SS320BF 10 1 T J =25°C 10 0 0 Peak Forward Surage Current (A) Instaneous Forward Current (A) 20 10 SS32BF/SS34BF SS36BF/SS38BF SS310BF/SS312BF SS315BF/SS320BF 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Transient Thermal Impedance（ °C /W） 100 10 1 60 80 100 10 8.3 ms Single Half Sine Wave (JEDEC Method) 70 60 50 40 SS32BF-SS38BF 30 SS310BF-SS320BF 20 10 Number of Cycles at 60Hz Fig.5- Typical Transient Thermal Impedance 0.1 80 1 1.8 Instaneous Forward Voltage (V) 1 0.01 40 Fig.4 Maximum Non-Repetitive Peak Forward Surage Current Fig.3 Typical Forward Characteristic 1.0 20 Percent of Rated Peak Reverse Voltage（%） 100 t, Pulse Duration（sec） 2 100