MB85RC512T

FUJITSU SEMICONDUCTOR
DS501-00028-2v0-J
DATA SHEET
FRAM
I2C
512K (64 K×8)
MB85RC512T
■
MB85RC512T
×8
MB85RC512T
MB85RC512T
MB85RC512T
,
CMOS
FRAM (Ferroelectric Random Access Memory:
, SRAM
/
E2PROM
,
1013
,
,1
,
■
2
/
:65,536
×8
: (SCL)
(SDA) 2
:3.4 MHz (
Max)
1 MHz (
Max)
/
:1013
:10 (
85 °C)
:1.8 V 3.6 V
:
0.71 mA (Typ @ 3.4 MHz), 1.2 mA (Max @ 3.4 MHz)
15
μA (Typ)
4
μA (Typ)
: 40 °C
85 °C
:
SOP, 8 (FPT-8P-M02)
RoHS
Copyright 2015 FUJITSU SEMICONDUCTOR LIMITED
2015.5
65,536
)
MB85RC512T
■
(TOP VIEW)
A0
1
8
VDD
A1
2
7
WP
A2
3
6
SCL
VSS
4
5
SDA
(FPT-8P-M02)
■
(
8
)
,
1
3
A0
A2
VSS
VDD
, SDA
VDD, VSS
• A0, A1, A2
•
VSS
4
VSS
5
SDA
6
SCL
,
“L”
,
,
“H”
7
“L”
8
2
, “L”
,
WP
(
,
VSS
)
,
VDD
DS501-00028-2v0-J
MB85RC512T
■
-
SDA
FRAM
65,536×8
SCL
WP
/
/
A0, A1, A2
■ I2C (Inter-Integrated Circuit)
MB85RC512T
,
,
, I2C
,2
,
,1
,
I
I 2C
,
,
2
C
VDD
SCL
SDA
I2C
DS501-00028-2v0-J
I2C
MB85RC512T
I2C
MB85RC512T
I2C
MB85RC512T
A2
0
A2
0
A2
0
A1
0
A0
0
A1
0
A0
1
A1
1
...
A0
0
3
MB85RC512T
■ I2C
I2C
,2
, SDA
SCL
,
SCL
“H”
I2C
“L”
, SCL
I2C
, SCL
“L”
SDA
“H”
“H”
, SDA
, SDA
“L”
“H”
“H”
,
,
,
,
,
SCL
SDA
H or L
Start
Stop
FRAM
■
(tWC)
,
(ACK)
2
IC
,
,
8
8
,
,
“L”
,
, NACK “H”
Master
1
SCL
2
3
8
SDA
,
,
9
ACK
9
Start
4
9
,
SDA
, ACK “L”
, Slave
,
SCL
8
9 ACK
,
,
Slave
ACK
,
,
,
8
(ACK
SDA
)
DS501-00028-2v0-J
MB85RC512T
■ (Slave address)
,8
,
(8
(3
), Read / Write
(4
(1
)
)
,
(4
),
3
)
4
(3
,
“1010”
)
(3
,
8
Read/Write
,
(1
,3
)
8
, R/W (Read/Write)
“1010”
,
,
,
) A2, A1, A0
“0”
, “1”
/
Start
1
2
3
4
5
6
7
8
9
1
2
..
SCL
SDA
ACK
S
1
0
1
0
A2
A1
A0
R/W
..
A
Read/Write
S
A ACK (SDA
DS501-00028-2v0-J
“L”
)
5
MB85RC512T
■
I2C
,
9
(8
ACK“L”
,
ACK
,
ACK“L”
8
8
,
)
8
ACK“L”
,
•
×2
,
, R/W
8
,
,
,
, ACK
8
,
ACK
ACK
,
8
8
,
■ FRAM (Acknowledge Polling)
FRAM
E2PROM
,
ACK
,
*
,
,
(8
)
,9
■ (WP)
“H”
“L”
,
,
,
VSS
“H”
,
/“L”
“L” (
)
6
DS501-00028-2v0-J
MB85RC512T
■
Byte Write
(R/W “0”
ACK
S
,
)
,
1 0 1 0 A2 A1 A0 0 A
Address
High 8bits
A
X XXXXXXX
,
ACK
,
Address
Low 8bits
A
Write
Data 8bits
A P
X X X X X X XX
MSB
LSB
S
P
A ACK (SDA
Page Write
Byte Write
(
)
,
S
, 64 K
FRAM
, ACK
1 0 1 0 A2 A1 A0 0 A
)
,
(0000H)
,
, FRAM
“L”
, FRAM
Address
High 8bits
A
Address
Low 8bits
A
Write
Data 8bits
Write
Data
A
...
A P
S
P
A
ACK (SDA
“L”
)
,
DS501-00028-2v0-J
7
MB85RC512T
Current Address Read
,
n
,
OFF
,n
1
(0000H)
,
(
Current Address
)
n+1
S
1 0 1 0 A2 A1 A0 1 A
Read
Data 8bits
S
N P
P
A ACK (SDA
“L”
N NACK (SDA
)
“H”
)
Random Read
,
)
NACK (SDA
S
,
,
“H”
1 0 1 0 A2 A1 A0 0 A
(R/W “1”
, SCL
,1
)
,
Address
High 8bits
A
Address
Low 8bits
A S
Read
Data 8bits
1 0 1 0 A2 A1 A0 1 A
N P
S
P
A ACK (SDA
N NACK (SDA
8
“L”
“H”
)
)
DS501-00028-2v0-J
MB85RC512T
Sequential Read
Random Read
,
(R/W “1”
)
,
...
,
(0000H)
Read
Data 8bits
A
A
...
Read
Data
Read
Data 8bits
A
N P
P
A ACK (SDA
“L”
N NACK (SDA
MB85RC512T
, 3.4 MHz
Master
Slave
NACK
,
(0000 1XXX)
)
“H”
)
,
Slave
,
,NACK
, 3.4 MHz
,
Byte Write
S
0 0 0 0 1 X X X N S
1 0 1 0 A2 A1 A0 0 A
Address
High 8bits
A
Address
Low 8bits
A
Write
Data 8bits
A P
Address
High 8bits
A
Address
Low 8bits
A
Write
Data 8bits
A
Page Write
S 0 0 0 0 1 X X X N S 1 0 1 0 A2 A1 A0 0 A
Write
Data
...
A P
Current Address Read
S
0 0 0 0 1 X X X N S
1 0 1 0 A2 A1 A0 1 A
Read
Data 8bits
N P
Random Address Read
S
0 0 0 0 1 X X X N S 1 0 1 0 A2 A1 A0 0 A
Address
High 8bits
A
Address
Low 8bits
A S
1 0 1 0 A2 A1 A0 1 A
Read
Data 8bits
N P
Address
High 8bits
A
Address
Low 8bits
A S
1 0 1 0 A2 A1 A0 1 A
Read
Data 8bits
A
Sequential Read
S
0 0 0 0 1 X X X N S 1 0 1 0 A2 A1 A0 0 A
...
A
Read
Data 8bits
A
Read
Data
...
Read
Data 8bits
A
...
N P
S
P
DS501-00028-2v0-J
A
A
N
N
ACK (SDA “L”
NACK (SDA “H”
)
)
9
MB85RC512T
Sleep
MB85RC512T
,
Sleep
Sleep
a)
b)
c)
d)
,
Sleep
,
,
F8H
ACK
, Read/Write
ACK
ACK
,
, Don't care
,
,
86H
, Sleep
S 1 1 1 1 1 0 0 0 A 1 0 1 0 A2 A1 A0 R/W A S 1 0 0 0 0 1 1 0 A P
S
P
A
MB85RC512T
Sleep
a)
b)
c)
, Sleep
(tREC)
, SDA
ACK (SDA
“L”
)
SCL
,
,
,
, Read/Write
, Don't care
9 CLK
SCL
,
,
,
S 1 0 1 0 A2 A1 A0 R/W X
,
S 1 0 1 0 A2 A1 A0 R/W A …
S
A
10
ACK (SDA
“L”
)
DS501-00028-2v0-J
MB85RC512T
Device ID
Device ID
ID (12
a)
b)
c)
,
)
ID
ID
3
ID
,
ACK
, Read/Write
ACK
d)
e) 3
3
,
, Manufacturer ID (12
,
ID F8H
)
Product
,
Don't care
,
ACK
ID
ID
,
,
,
,
ID F9H
Data Byte 1st/2nd/3rd
NACK (SDA “H”
)
ACK
, Data Byte 1st
,
,
ID
Reserved
Reserved
R
S Slave ID A 1 0 1 0 A2 A1 A0 / A S Slave ID A Data Byte A Data Byte A Data Byte N P
W
1st
2nd
3rd
(F8H)
(F9H)
S
P
A ACK (SDA
“L”
N NACK (SDA
Data Byte 1st
Manufacture ID = 00AH
Data Byte 2nd
)
“H”
)
Data Byte 3rd
Product ID = 658H
11 10
9
8 7 6 5 4 3
Fujitsu Semiconductor
2
1
0
11 10 9 8
Density = 6H
7
6
5 4 3 2
Proprietary use
1
0
0
0
0
0
1
0
0
0
1
0
0
0
0
DS501-00028-2v0-J
0
0
0
0
1
1
1
0
1
1
0
11
MB85RC512T
■
, I2C
, (1)
,
, (2)
,
,
,
,
(1)
SDA
“L”
,
SDA
,
“H”
,
9
“
1
“1””
SCL
SDA
Hi-Z
1
Read
(2)
I2C
12
Write
,
“1”
9
,
DS501-00028-2v0-J
MB85RC512T
■
*
VDD
0.5
*
VIN
0.5
VDD
0.5 (
4.0)
V
*
VOUT
0.5
VDD
0.5 (
4.0)
V
TA
40
85
°C
Tstg
55
125
°C
VSS
+ 4.0
V
0V
(
,
,
)
,
,
■
VDD
*1
TA
*2
1
2
VSS
1.8
40
⎯
3.6
⎯
V
°C
85
0V
,
,
,
,
,
,
,
DS501-00028-2v0-J
13
MB85RC512T
■
1.
(
⎯
⎯
1
μA
⎯
⎯
1
μA
SCL 0.1 MHz
⎯
0.04
⎯
mA
SCL 1 MHz
⎯
0.24
0.44
mA
SCL
⎯
0.71
1.2
mA
⎯
15
120
μA
⎯
4
10
μA
*1
|ILI|
VIN 0 V
*2
|ILO|
VOUT 0 V
IDD
ISB
)
VDD
VDD
3.4 MHz
SCL, SDA VDD
A0,A1,A2,WP
0V
VDD
TA
25 °C
IZZ
SCL, SDA VDD
A0, A1, A2, WP 0 V
“H”
VIH
VDD 1.8 V
3.6 V
VDD × 0.7
⎯
VDD
V
“L”
VIL
VDD 1.8 V
3.6 V
VSS
⎯
VDD × 0.3
V
“L”
VOL
IOL 3 mA
⎯
⎯
0.4
V
A0, A1, A2, WP
RIN
1:
2:
14
VIN
VIL (
)
50
⎯
⎯
kΩ
VIN
VIH (
)
1
⎯
⎯
MΩ
: SCL, SDA
: SDA
DS501-00028-2v0-J
MB85RC512T
2.
FSCL
0
100
0
400
4000
⎯
600
⎯
TLOW
4700
⎯
1300
⎯
SCL/SDA
Tr
SCL/SDA
Tf
⎯
1000
⎯
⎯
300
⎯
Start
THD:STA
4000
⎯
Start
TSU:STA
4700
SDA
THD:DAT
SCL
THIGH
0
1000
0
3400
kHz
*1
⎯
60
⎯
ns
*2
500
⎯
160
⎯
ns
300
⎯
300
⎯
80
ns
300
⎯
120
⎯
80
ns
600
⎯
250
⎯
160
⎯
ns
⎯
600
⎯
250
⎯
160
⎯
ns
0
⎯
0
⎯
0
⎯
0
⎯
ns
260
SDA
TSU:DAT
250
⎯
100
⎯
50
⎯
16
⎯
ns
SDA
TDH:DAT
0
⎯
0
⎯
0
⎯
0
⎯
ns
Stop
TSU:STO
4000
⎯
600
⎯
250
⎯
160
⎯
ns
SCL
SDA
TAA
⎯
3000
⎯
900
⎯
450*3
⎯
130
ns
TBUF
4700
⎯
1300
⎯
500
⎯
0.3
⎯
ns
TSP
⎯
50
⎯
50
⎯
50
⎯
5
ns
(SCL
1:VDD
2:VDD
3:VDD
4:VDD
, SDA
2.7 V
2.7 V
2.7 V
2.7 V
)
*4
300 ns
600 ns
550 ns
26 ns
,
1.8 V
3.6 V
40 °C
85 °C
VDD×0.2 VDD×0.8
5 ns
5 ns
VDD/2
VDD/2
100 pF
DS501-00028-2v0-J
15
MB85RC512T
3.
TSU:DAT
SCL
SDA
VIH
VIL
Start
THD:DAT
VIH
VIH
VIH
VIH
VIL
VIL
VIL
VIL
VIH
VIH
VIH
VIH
VIL
VIL
VIL
VIL
TSU:STA THD:STA
TSU:STO
Tr
THIGH
SCL
Stop
VIH
TLOW
VIH
VIL
Tf
VIL
VIH
VIH
VIL
VIL
VIH
SDA
Stop
VIH
VIL
Start
VIH
VIL
VIH
VIL
VIL
TBUF
Tr
T
TDH:DAT f
TAA
Tsp
VIH
SCL
VIL
VIL
VIH
SDA
VIH
Valid
VIL
VIL
VIL
1/FSCL
4.
CI/O
CIN
f
VDD 3.3V,
1 MHz, TA
25 °C
⎯
⎯
8
pF
⎯
⎯
8
pF
5. AC
3.3 V
1.8 k
Output
100 pF
16
DS501-00028-2v0-J
MB85RC512T
■
tf
tpd
tr
tpu
VDD
VDD
VDD (Min)
VDD (Min)
VIH (Min)
VIH (Min)
VIL (Max)
VIL (Max)
0V
0V
SDA, SCL > VDD × 0.8 *
SDA, SCL
SDA, SCL (Max)
OFF
ON
VDD
SDA, SCL : Don't care
SDA, SCL > VDD × 0.8 *
SDA, SCL
0.5 V
tpd
85
⎯
ns
tpu
250
⎯
μs
tr
0.05
⎯
ms/V
tf
0.1
⎯
ms/V
tREC
⎯
400
μs
SDA, SCL
SDA, SCL
,
,
■ FRAM
*1
/
*
1
2
1013
⎯
10
⎯
2
FRAM
,
/
TA
85 °C
TA
85 °C
/
,
,
DS501-00028-2v0-J
17
MB85RC512T
■
, WP, A0, A1, A2
VDD
VSS
■ ESD
DUT
ESD HBM(
JESD22-A114
2000 V
2000 V
)
ESD MM(
JESD22-A115
200 V
200 V
)
ESD CDM(
JESD22-C101
1000 V
1000 V
)
(
)
⎯
MB85RC512TPNF-G-JNE1
JESD78
(
)
⎯
JESD78
(
Proprietary method
)
⎯
(C-V
Proprietary method
)
200 V
200 V
(
)
A
VDD
IIN
18
) VIN
IIN
-
VSS
, IIN
±300 mA
, I/O
VDD
(
)
V
VIN
(
+
DUT
300 mA
(
)
,
IIN
300 mA
,
DS501-00028-2v0-J
MB85RC512T
(C-V
)
A
1
2
VDD
SW
DUT
+
V
VIN
-
(
) SW
2
1
,5
1
2
C
200pF
VDD
(
)
VSS
,
,5
,
■
JEDEC
, Moisture Sensitivity Level 3 (IPC / JEDEC J-STD-020D)
■
, REACH
DS501-00028-2v0-J
, EU RoHS
RoHS
19
MB85RC512T
■
MB85RC512TPNF-G-JNE1
SOP, 8
(FPT-8P-M02)
⎯*
MB85RC512TPNF-G-JNERE1
SOP, 8
(FPT-8P-M02)
1500
,
20
DS501-00028-2v0-J
MB85RC512T
■
ࡊ࡜ࠬ࠴࠶ࠢ࡮SOP, 8 ࡇࡦ
࡝࡯࠼ࡇ࠶࠴
1.27mm
ࡄ࠶ࠤ࡯ࠫ᏷˜
ࡄ࠶ࠤ࡯ࠫ㐳ߐ
3.9mm ˜ 5.05mm
࡝࡯࠼ᒻ⁁
ࠟ࡞࠙ࠖࡦࠣ
ኽᱛᣇᴺ
ࡊ࡜ࠬ࠴࠶ࠢࡕ࡯࡞࠼
ขઃߌ㜞ߐ
1.75mm MAX
⾰㊂
0.06g
(FPT-8P-M02)
ࡊ࡜ࠬ࠴࠶ࠢ࡮
ࡇࡦ
㧔FPT-8P-M02㧕
+0.25
ᵈ 1㧕* ශኸᴺߪ࡟ࠫࡦᱷࠅࠍ฽߻‫ޕ‬
ᵈ 2㧕* ශኸᴺߪ࡟ࠫࡦᱷࠅࠍ฽߹ߕ‫ޕ‬
ᵈ 3㧕┵ሶ᏷߅ࠃ߮┵ሶෘߐߪࡔ࠶ࠠෘࠍ฽߻‫ޕ‬
ᵈ 4㧕┵ሶ᏷ߪ࠲ࠗࡃಾᢿᱷࠅࠍ฽߹ߕ‫ޕ‬
+.010
+0.03
*1 5.05 –0.20 .199 –.008
0.22 –0.07
+.001
.009 –.003
8
5
*2 3.90±0.30 6.00±0.20
(.154±.012) (.236±.008)
Details of "A" part
45°
1.55±0.20
(Mounting height)
(.061±.008)
0.25(.010)
0.40(.016)
1
"A"
4
1.27(.050)
0.44±0.08
(.017±.003)
0.13(.005)
0~8°
M
0.50±0.20
(.020±.008)
0.60±0.15
(.024±.006)
0.15±0.10
(.006±.004)
(Stand off)
0.10(.004)
C
2002-2012 FUJITSU SEMICONDUCTOR LIMITED F08004S-c-5-10
DS501-00028-2v0-J
න૏㧦mm 㧔inches㧕
ᵈᗧ㧦᜝ᒐౝߩ୯ߪෳ⠨୯ߢߔ‫ޕ‬
21
MB85RC512T
■
[MB85RC512TPNF-G-JNE1]
[MB85RC512TPNF-G-JNERE1]
RC512T
E11400
300
[FPT-8P-M02]
22
DS501-00028-2v0-J
MB85RC512T
■
1.
1.1
(
(
)
)
520 mm
,
/
SOP, 8 (2)
FPT-8P-M02
/
95
7600
/
30400
1.8
2.6
7.4
6.4
4.4
C
©2006-2010 FUJITSU SEMICONDUCTOR LIMITED
2006 FUJITSU LIMITED F08008-SET1-PET:FJ99L-0022-E0008-1-K-1
F08008-SET1-PET:FJ99L-0022-E0008-1-K-3
t
0.5
(
DS501-00028-2v0-J
mm)
23
MB85RC512T
1.2
IC
SOP
Index mark
1
(
(
-B
3
E1
1
2
3
(
3
,
)
2
,
,
)
)
3
1
-A
*3
,
G
Pb
,
,
,
24
DS501-00028-2v0-J
MB85RC512T
1.3
(
[C-3
,
(20mm×100mm)]
(50mm×100mm)
)
㘈ቴ⵾ຠဳᩰ‫ޓ‬෶ߪ‫ޔ‬ን჻ㅢ⵾ຠဳᩰ
::::::::::::::
C-3
㋦㩖㩢㨺㩙㨺㩂
:::
਄⸥⵾ຠဳᩰ⵾ຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨
㧽㧯‫ޓ‬㧼㧭㧿㧿
0::::::::::::::
0:::::::::: ::::::
ᬌᩏ‫ޓ‬ᷣ
ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨
⵾ຠᢙ㊂
:::REU
::::::::::::::
㘈ቴ⵾ຠဳᩰ‫ޓ‬෶ߪ‫ޔ‬ን჻ㅢ⵾ຠဳᩰ
਄⸥⵾ຠဳᩰߩ㩔㩨㨺㩄㨺㩎㩨
::::::::
൮ⵝᐕ᦬ᣣ
#55'/$.'&+0ZZZZZ
:::::::::::::::
㘈ቴ⵾ຠဳᩰ‫ޓ‬෶ߪ‫ޔ‬ን჻ㅢ⵾ຠဳᩰ
ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨
::::
::::::::::
൮ⵝㅊ⇟
::::::::::
::::::::::
ን჻ㅢ▤ℂ⇟ภ
⵾ຠ㩥㨹㩎ᖱႎ㧗⵾ຠᢙ㊂
:::::::::::::: ․⸥੐㗄
-A
[D
] (100mm×100mm)
⊒ᵈ⠪‫ޓޓ‬:::::::::::::
ㅍઃవฬ
%756
ን჻ㅢ
࠮ࡒࠦࡦ࠳ࠢ࠲࡯ᩣᑼળ␠
ฃᷰ႐ᚲฬ‫ޓޓ‬:::::::::
ㅍઃవ૑ᚲ
&'.+8'4;21+06㧕
⚊ຠࠠ࡯⇟ภ‫ޓ‬::::::::::::::
64#0501
ຠฬ㩄㨺㩎㩨‫ޓޓޓ‬::::::::::::::
2#4601‫⵾
ޓޓޓ‬ຠဳᩰ
ຠฬ 2#460#/'::::::::::::::
⵾ຠဳᩰ
:::㧛:::
౉ᢙ㧛⚊౉ᢙ㊂
36;616#.36;
%7561/'454'/#4-5
⊒ᵈ⠪↪஻⠨
::::::::::::::::::::
D
ฃᵈ⠪
8'0&14
:::::::
ን჻ㅢ▤ℂ⇟ภ
:::::::
ን჻ㅢ▤ℂ⇟ภ
:::::::
ን჻ㅢ▤ℂ⇟ภ
:::::::::::::::
‫⵾
ޓ‬ຠဳᩰ
න૏
70+6
::
2#%-#)'%1706
ᪿ൮୘ᢙ
:::㧛:::
0:::::::::::::::::
ን჻ㅢ▤ℂ⇟ภ⵾ຠᢙ㊂
0:::::::::::::::::
⵾ຠဳᩰ⵾ຠᢙ㊂
ን჻ㅢ▤ℂ⇟ภ⵾ຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨
⵾ຠဳᩰ⵾ຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨
ን჻ㅢ▤ℂ⇟ภ
0::::::::::
ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨
-B
::::::::::::::㧔⵾ຠဳᩰ㧕
㧔▫ᢙ㧕‫ޓޓޓ‬㧔ᢙ㊂㧕
‫ޓ‬:▫‫ޓޓޓޓޓ‬:::୘
‫ޓ‬:▫‫ޓޓޓޓޓ‬:::୘
㧔⵾ຠ㩥㨹㩎ᖱႎ㧕
‫ޓޓޓ‬:::::::
‫ޓޓޓ‬:::::::
(
)
DS501-00028-2v0-J
,
‫ޓޓޓޓޓ⸘ޓޓ‬:::୘
-A, B
25
MB85RC512T
1.4
(1)
H
W
L
L
W
H
540
125
75
(
mm)
(2)
H
W
L
L
W
H
565
270
180
(
26
mm)
DS501-00028-2v0-J
MB85RC512T
2.
2.1
No
FPT-8P-M02
3
/
/
/
1500
1500
10500
ø1.5 +0.1
–0
8±0.1
1.75±0.1
2±0.05
4±0.1
B
0.3±0.05
A
B
A
5.5±0.1
12 +0.3
–0.1
5.5±0.05
ø1.5 +0.1
–0
SEC.B-B
2.1±0.1
6.4±0.1
0.4
3.9±0.2
SEC.A-A
C
2012 FUJITSU SEMICONDUCTOR LIMITED SOL8-EMBOSSTAPE9 : NFME-EMB-X0084-1-P-1
mm
DS501-00028-2v0-J
27
MB85RC512T
2.2 IC
Index mark
ER
(
)
(
)
(
)
2.3
࡝࡯࡞ⓣኸᴺ
E
D
W2
C
B
A
W1
12
13
14
15
56
12
16
24
r
W3
㧦ࡂࡉㇱߩ᏷ኸᴺ
mm
No
1
2
3
8
A
254
±2
4
5
12
254
±2
6
7
16
330
±2
254
±2
330
±2
254
±2
10
11
32
44
330
±2
330±2
100 +2
-0
150 +2
-0
100 +2
-0
150 +2
-0
100 +2
-0
100±2
C
13±0.2
13 +0.5
-0.2
D
21±0.8
20.5 +1
-0.2
E
W1
W2
W3
r
28
9
24
100 +2
-0
B
8
2±0.5
8.4 +2
-0
14.4
7.9
10.9
12.4 +2
-0
18.4
11.9
16.4 +2
-0
22.4
15.4
15.9
24.4 +2
-0
30.4
19.4
23.9
32.4 +2
-0
38.4
27.4
31.9
44.4 +2
-0
50.4
35.4
43.9
47.4
56.4 +2
-0
12.4 +1
-0
+0.1
16.4 +1
-0 24.4 -0
62.4
18.4
22.4
30.4
55.9
59.4
12.4
14.4
16.4
18.4
24.4
26.4
1.0
DS501-00028-2v0-J
MB85RC512T
2.4
(φ330mm
)
φ
330 mm
1,
1,
4
1,
4
4
1,
4
(
-A
1
2
3
4
(
E1
4
)
-B
2,
3
4
,
G
Pb
,
,
)
,
,
,
,
,
DS501-00028-2v0-J
29
MB85RC512T
2.5
(
[C-3
,
(20mm×100mm)]
(50mm×100mm)
)
㘈ቴ⵾ຠဳᩰ‫ޓ‬෶ߪ‫ޔ‬ን჻ㅢ⵾ຠဳᩰ
::::::::::::::
0::::::::::::::
㋦㩖㩢㨺㩙㨺㩂
:::
਄⸥⵾ຠဳᩰ⵾ຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨
㧽㧯‫ޓ‬㧼㧭㧿㧿
0:::::::::: ::::::
C-3
ᬌᩏ‫ޓ‬ᷣ
ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨
⵾ຠᢙ㊂
:::REU
::::::::::::::
㘈ቴ⵾ຠဳᩰ‫ޓ‬෶ߪ‫ޔ‬ን჻ㅢ⵾ຠဳᩰ
਄⸥⵾ຠဳᩰߩ㩔㩨㨺㩄㨺㩎㩨
::::::::
൮ⵝᐕ᦬ᣣ
#55'/$.'&+0ZZZZZ
:::::::::::::::
㘈ቴ⵾ຠဳᩰ‫ޓ‬෶ߪ‫ޔ‬ን჻ㅢ⵾ຠဳᩰ
ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨
::::
::::::::::
൮ⵝㅊ⇟
::::::::::
::::::::::
ን჻ㅢ▤ℂ⇟ภ
⵾ຠ㩥㨹㩎ᖱႎ㧗⵾ຠᢙ㊂
:::::::::::::: ․⸥੐㗄
-A
[D
] (100mm×100mm)
⊒ᵈ⠪‫ޓޓ‬:::::::::::::
ㅍઃవฬ
%756
ን჻ㅢ
࠮ࡒࠦࡦ࠳ࠢ࠲࡯ᩣᑼળ␠
ฃᷰ႐ᚲฬ‫ޓޓ‬:::::::::
ㅍઃవ૑ᚲ
&'.+8'4;21+06㧕
⚊ຠࠠ࡯⇟ภ‫ޓ‬::::::::::::::
64#0501
ຠฬ㩄㨺㩎㩨‫ޓޓޓ‬::::::::::::::
2#4601‫⵾
ޓޓޓ‬ຠဳᩰ
ຠฬ 2#460#/'::::::::::::::
⵾ຠဳᩰ
:::㧛:::
౉ᢙ㧛⚊౉ᢙ㊂
36;616#.36;
%7561/'454'/#4-5
⊒ᵈ⠪↪஻⠨
::::::::::::::::::::
D
ฃᵈ⠪
8'0&14
:::::::
ን჻ㅢ▤ℂ⇟ภ
:::::::
ን჻ㅢ▤ℂ⇟ภ
:::::::
ን჻ㅢ▤ℂ⇟ภ
:::::::::::::::
‫⵾
ޓ‬ຠဳᩰ
න૏
70+6
::
2#%-#)'%1706
ᪿ൮୘ᢙ
:::㧛:::
0:::::::::::::::::
ን჻ㅢ▤ℂ⇟ภ⵾ຠᢙ㊂
0:::::::::::::::::
⵾ຠဳᩰ⵾ຠᢙ㊂
ን჻ㅢ▤ℂ⇟ภ⵾ຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨
⵾ຠဳᩰ⵾ຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨
ን჻ㅢ▤ℂ⇟ภ
0::::::::::
ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨
-B
::::::::::::::㧔⵾ຠဳᩰ㧕
㧔▫ᢙ㧕‫ޓޓޓ‬㧔ᢙ㊂㧕
‫ޓ‬:▫‫ޓޓޓޓޓ‬:::୘
‫ޓ‬:▫‫ޓޓޓޓޓ‬:::୘
‫ޓޓޓޓޓ⸘ޓޓ‬:::୘
㧔⵾ຠ㩥㨹㩎ᖱႎ㧕
‫ޓޓޓ‬:::::::
‫ޓޓޓ‬:::::::
(
30
)
,
-A, B
DS501-00028-2v0-J
MB85RC512T
2.6
(1)
H
W
L
L
W
H
12, 16
40
24, 32
365
44
50
345
65
56
75
(
mm)
(2)
H
W
L
L
W
H
415
400
315
(
DS501-00028-2v0-J
mm)
31
MB85RC512T
■
,
|
19
21
32
DS501-00028-2v0-J
MB85RC512T
MEMO
DS501-00028-2v0-J
33
MB85RC512T
MEMO
34
DS501-00028-2v0-J
MB85RC512T
MEMO
DS501-00028-2v0-J
35
MB85RC512
富士通セミコンダクター株式会社
0120-198-610
222-0033
2-100-45
:
9
17
(
,
)
PHS
http://jp.fujitsu.com/fsl/
,
,
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