1N5826 thru 1N5828R
Silicon Power
Schottky Diode
VRRM = 20 V - 40 V
IF = 15 A
Features
• High Surge Capability
• Types from 20 V to 40 V VRRM
DO-4 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
("R" devices have leads reversed)
Conditions
1N5826 (R)
1N5827 (R)
1N5828 (R)
Unit
Repetitive peak reverse voltage
VRRM
20
30
40
V
RMS reverse voltage
VRMS
14
21
28
V
DC blocking voltage
VDC
20
30
40
V
Continuous forward current
IF
TC ≤ 100 °C
15
15
15
A
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
TC = 25 °C, tp = 8.3 ms
500
500
500
A
Operating temperature
Storage temperature
Tj
Tstg
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Conditions
1N5826 (R)
1N5827 (R)
1N5828 (R)
Unit
IF = 15 A, Tj = 25 °C
VR = 20 V, Tj = 25 °C
VR = 20 V, Tj = 125 °C
0.44
10
250
0.47
10
250
0.5
10
250
V
1.8
1.8
1.8
Symbol
Diode forward voltage
VF
Reverse current
IR
mA
Thermal characteristics
Thermal resistance, junction case
RthJC
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1
°C/W
1N5826 thru 1N5828R
www.genesicsemi.com/silicon-products/schottky-rectifiers/
2
1N5826 thru 1N5828R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
www.genesicsemi.com/silicon-products/schottky-rectifiers/
3