MBR40045CT thru MBR400100CTR
Silicon Power
Schottky Diode
VRRM = 45 V - 100 V
IF(AV) = 400 A
Features
• High Surge Capability
• Types from 45 V to 100 V VRRM
Twin Tower Package
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
Conditions
MBR40045CT(R) MBR40060CT(R) MBR40080CT(R) MBR400100CT(R)
Unit
VRRM
45
60
80
100
V
VRMS
32
42
57
70
V
VDC
Tj
Tstg
45
-55 to 150
-55 to 150
60
-55 to 150
-55 to 150
80
-55 to 150
-55 to 150
100
-55 to 150
-55 to 150
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
MBR40045CT(R) MBR40060CT(R) MBR40080CT(R) MBR400100CT(R)
Symbol
Conditions
Average forward current
(per pkg)
IF(AV)
TC = 125 °C
400
400
400
400
A
Peak forward surge
current (per leg)
IFSM
tp = 8.3 ms, half sine
3000
3000
3000
3000
A
Maximum forward
voltage (per leg)
VF
IFM = 200 A, Tj = 25 °C
0.70
0.75
0.84
0.84
V
Reverse current at rated
DC blocking voltage
(per leg)
IR
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
1
10
50
1
10
50
1
10
50
1
10
50
mA
0.35
0.35
0.35
0.35
°C/W
Parameter
Unit
Thermal characteristics
Thermal resistance,
junction-case, per leg
RΘJC
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MBR40045CT thru MBR400100CTR
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MBR40045CT thru MBR400100CTR
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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