MBR40035CT(R)L
Low VF Silicon Power
Schottky Diode
VRRM = 35 V
IF(AV) = 400 A
Features
• High Surge Capability
• Type 35 V VRRM
Twin Tower Package
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Symbol
Parameter
Conditions
MBR40035CT(R)L Unit
Maximum recurrent peak reverse voltage
VRRM
35
V
Maximum RMS voltage
VRMS
25
V
Maximum DC blocking voltage
Operating temperature
Storage temperature
VDC
Tj
Tstg
35
-55 to 150
-55 to 150
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Parameter
Conditions
MBR40035CT(R)L Unit
Average forward current (per pkg)
IF(AV)
TC = 100 °C
400
A
Peak forward surge current
IFSM
tp = 8.3 ms, half sine
3000
A
Maximum instantaneous forward voltage (per
leg)
VF
IFM = 200 A, Tj = 25 °C
0.60
V
Maximum instantaneous reverse
current at rated DC blocking voltage
(per leg)
IR
Tj = 25 °C
3
Tj = 100 °C
250
(per leg)
mA
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
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RΘJC
0.35
1
°C/W
MBR40035CT(R)L
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2
MBR40035CT(R)L
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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3