BTJM Photovoltaic Cell

BTJM Photovoltaic Cell
Triple-Junction with Monolothic Diode Solar Cell for Space Applications
DATASHEET | SEPTEMBER 2012
SPACE PHOTOVOLTAICS
28% Minimum Average Efficiency
Features & Characteristics
„„ Highest efficiency flight cell with monolithic diode in the market
„„ Triple-Junction with Monolithic Diode (BTJM) InGaP/InGaAs/Ge
Solar Cells with n-on-p Polarity on 140-µm Uniform Thickness
Substrate
„„ Fully space-qualified InGaAs monolithic diode protection in production at Emcore since 2007
Typical Performance Data
Electrical Parameters @ AM0 (135.3 mW/cm2)
28˚C
BOL Efficiency at Maximum Power Point
28.0%
Voc
2.69V
Jsc
17.0 mA/cm2
Vmp
2.33V
Jmp
16.3 mA/cm7
„„ Excellent radiation resistance with P/Po = 0.89 @ 1-MeV, 5E14 e/cm2 fluence
„„ Lowest solar cell mass of 84 mg/cm2
„„ Good mechanical strength for reduced attrition during assembly and laydown
„„ Weldable or Solderable contacts
„„ Standard and custom sizes available
BTJM Cell Structure
Solar Cell
Monolithic Diode
p/n
p/n – InGaAs
InGaAs
Typical BTJM Illuminated I-V Plot
Solar Cell Area = 26.6 cm2
Copyright
© 2008
Emcore| REV
Corporation
©
2012 EMCORE
Corporation
2012.09
505 332 5000
505-332-5000
505 332 5100
505-332-5100
photovoltaic-sales@emcore.com
photovoltaic-sales@emcore.com
www.emcore.com
www.emcore.com
Information contained herein is deemed to be reliable and accurate as of the issue date. EMCORE reserves the right to change the design or specifications at any time without notice.
BTJM Photovoltaic Cell
Triple-Junction with Monolothic Diode Solar Cell for Space Applications
DATASHEET | SEPTEMBER 2012
SPACE PHOTOVOLTAICS
Radiation Performance at 1 MeV Electron
Irradiation, EOL/BOL Ratios
Typical Performance Data
Monolithic Diode Electrical Performance
VRB <2.0 V @ IRB
500 mA, 28˚
IRB <50 µA @ VRB
2.5V (Dark), 28˚C
IRB <200 µA @ VRB
2.5V (Illuminated), 28˚C
IRB <10 µA @ VRB
2.5V (Dark), –150˚C
IRB <1 µA @ VRB
2.5V (Dark), +120˚C
Fluence (e/cm2)
Voc
Isc
Vmp
Imp
Pmp
Efficiency
5E 13
0.96
1.00
0.97
1.00
0.97
0.97
1E 14
0.95
1.00
0.96
1.00
0.95
0.96
5E 14
0.91
0.97
0.92
0.96
0.89
0.89
1E 15
0.90
0.95
0.90
0.93
0.84
0.84
Temperature Coefficients
Key Space Qualification Results
Test Performed
Industry Quality
Standard
Typical Test Results
Fluence (e/cm2)
Voc
(mV/˚C)
Jsc (1)
(µA/˚Ccm2)
Vm
(mV/˚C)
Jmp(2)
(µA/˚Ccm2)
Metal Contact Thickness
4-8 µm
6 µm
BOL
-5.9
+5
-5.9
+3
Dark Current degradation after reverse bias
∆ Ispec <2%
Electrical performance after 2,000 thermal
cycles -180°C to +95°C
<2%
<0.4%
5E 13
-6.0
+6
-6.3
+4
<0.8%
1E 14
-6.2
+6
-6.2
+4
5E 14
-6.2
+7
-6.4
High-Temperature Anneal at 200°C for
>5,000 hrs.
<2%
No measurable
difference
+6
1E 15
-6.3
+9
-6.5
+8
Contact pull strength
>300 grams
>1000 grams
„„
Electrical performance degradation after 40
day humidity exposure at 60°C and 95%
relative humidity
<1.5%
<0.4%
„„
(1)
Jsc is the symbol for normalized Isc
(2)
Jmp is the symbol for normalized Imp
About EMCORE Corporation
EMCORE Photovoltaics
Albuquerque, NM
„„Incorporated in 1984
„„Appx. 900 Employees
„„Nasdaq: EMKR
Regulatory
EMCORE CORPORATION
ISO 9001 CERTIFIED
Copyright
© 2008
Emcore| REV
Corporation
©
2012 EMCORE
Corporation
2012.09
505 332 5000
505-332-5000
505 332 5100
505-332-5100
EMCORE PHOTOVOLTAICS
AS9100 CERTIFIED
photovoltaic-sales@emcore.com
photovoltaic-sales@emcore.com
www.emcore.com
www.emcore.com
Information contained herein is deemed to be reliable and accurate as of the issue date. EMCORE reserves the right to change the design or specifications at any time without notice.