TCED2100/TCED4100 Datasheet

TCED2100/TCED4100
Vishay Semiconductors
Optocoupler, Photodarlington Output,
Dual Channel, High Gain
FEATURES
• Isolation materials according to UL94-VO
• Pollution degree 2 (DIN/VDE 0110/resp. IEC
60664)
• Climatic classification 55/100/21 (IEC 60068
part 1)
C
• Special construction: therefore, extra low
coupling capacity of typical 0.2 pF, high common
mode rejection
E
• Low temperature coefficient of CTR
• Creepage current resistance according to VDE 0303/
IEC 60112 comparative tracking index: CTI ≥ 175
1
A
C
8 PIN
• Rated
impulse
VIOTM = 8 kV peak
16 PIN
17200
C
voltage
(transient
overvoltage)
• Isolation test voltage (partial discharge test voltage)
Vpd = 1.6 kV peak
V
D E
• Rated
isolation
VIOWM = 600 VRMS
voltage
• Rated
recurring
VIORM = 848 V peak
DESCRIPTION
The TCED2100/TCED4100 consists of a phototransistor
optically coupled to a gallium arsenide infrared-emitting
diode in a 8-pin (dual) or 16-pin (quad) plastic dual inline
package.
The elements are mounted on one leadframe providing a
fixed distance between input and output for highest safety
requirements.
(RMS
peak
includes
voltage
DC)
(repetitive)
• Thickness though insulation ≥ 0.75 mm
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
APPLICATIONS
• Switch-mode power supplies
VDE STANDARDS
• Line receiver
These couplers perform safety functions according to the
following equipment standards:
• Computer peripheral interface
• DIN EN 60747-5-5
Optocoupler for electrical safety requirements
• Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage ≤ 300 V
- for appl. class I - III at mains voltage ≤ 600 V
according to DIN EN 60747-5-5.
• IEC 60950/EN 60950
Office machines (applied for reinforced isolation for mains
voltage ≤ 400 VRMS)
• VDE 0804
Telecommunication apparatus and data processing
• IEC 60065
Safety for mains-operated
household apparatus
electronic
and
related
• Microprocessor system interface
AGENCY APPROVALS
• UL1577, file no. E76222 system code U, double protection
• CSA 22.2 bulletin 5A, double protection
• DIN EN 60747-5-5
• BSI IEC 60950; IEC 60065
• FIMKO
ORDER INFORMATION
PART
REMARKS
TCED2100
CTR ≥ 600 %, DIP-8
TCED4100
CTR ≥ 600 %, DIP-16
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For technical questions, contact: [email protected]
Document Number: 83728
Rev. 1.6, 16-May-08
TCED2100/TCED4100
Optocoupler, Photodarlington Output,
Dual Channel, High Gain
Vishay Semiconductors
(1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6
V
Forward current
IF
60
mA
IFSM
1.5
A
Pdiss
100
mW
Tj
125
°C
Collector emitter voltage
VCEO
35
V
Emitter collector voltage
VECO
7
V
mA
tp ≤ 10 µs
Forward surge current
Power dissipation
Junction temperature
OUTPUT
Collector current
IC
80
ICM
100
mA
Pdiss
150
mW
Tj
125
°C
tp/T = 0.5, tp ≤ 10 ms
Collector peak current
Power dissipation
Junction temperature
COUPLER
Isolation test voltage (RMS)
VISO
5000
VRMS
Total power dissipation
t = 1 min
Ptot
250
mW
Operating ambient temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 55 to + 125
°C
Tsld
260
°C
2 mm from case, t ≤ 10 s
Soldering temperature (2)
Notes
(1) T
amb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for throught hole devices.
ELECTRICAL CHARACTERISTCS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
1.4
UNIT
INPUT
Forward voltage
IF = 20 mA
VF
1.15
VR = 0 V, f = 1 MHz
Cj
50
Collector emitter voltage
IC = 1 mA
VCEO
32
V
Emitter collector voltage
IE = 100 µA
VECO
7
V
VCE = 10 V, If = 0 A, E = 0
ICEO
Junction capacitance
V
pF
OUTPUT
Collector ermitter cut-off current
15
100
nA
COUPLER
Collector emitter saturation voltage
Cut-off frequency
IF = 20 mA, IC = 5 mA
VCEsat
VCE = 5 V, IF = 10 mA, RL = 100 Ω
fc
10
kHz
f = 1 MHz
Ck
0.3
pF
Coupling capacitance
1
V
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
IC/IF
Document Number: 83728
Rev. 1.6, 16-May-08
TEST CONDITION
SYMBOL
MIN.
TYP.
VCE = 2 V, IF = 1 mA
CTR
600
800
For technical questions, contact: [email protected]
MAX.
UNIT
%
www.vishay.com
805
TCED2100/TCED4100
Optocoupler, Photodarlington Output,
Dual Channel, High Gain
Vishay Semiconductors
MAXIMUM SAFETY RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF
130
mA
Pdiss
265
mW
VIOTM
8
kV
Tsi
150
°C
INPUT
Forward current
OUTPUT
Power dissipation
COUPLER
Rated impulse voltage
Safety temperature
Note
According to DIN EN 60747-5-5 (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.
INSULATION RATED PARAMETERS
TEST CONDITION
SYMBOL
MIN.
Partial discharge test voltage routine test
PARAMETER
100 %, ttest = 1 s
Vpd
1.6
kV
Partial discharge test voltage lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
VIOTM
8
kV
Vpd
1.3
kV
VIO = 500 V
RIO
1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
VIO = 500 V, Tamb = 150 °C
(construction test only)
RIO
109
Ω
Insulation resistance
MAX.
UNIT
VIOTM
300
P tot - Total Power Dissipation (mW)
TYP.
t1, t2
t3 , t4
ttest
tstres
Photodarlington
Psi (mW)
250
200
= 1 to 10 s
=1s
= 10 s
= 12 s
VPd
150
VIOWM
VIORM
100
IR-Diode
Isi (mA)
50
0
0
0
14887
25
50
75
100
125
150
13930
Tamb - Ambient Temperature (°C)
Fig. 1 - Derating Diagram
t3 ttest t4
tTr = 60 s
t1
t2
t stres
t
Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-5/DIN EN 60747-; IEC60747
SWITCHING CHARACTERISTICS
TEST CONDITION
SYMBOL
Rise time
PARAMETER
VCC = 2 V, IC = 10 mA, RL = 100 Ω, (see figure 3)
tr
300
µs
Fall time
VCC = 2 V, IC = 10 mA, RL = 100 Ω, (see figure 3)
tf
250
µs
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806
MIN.
For technical questions, contact: [email protected]
TYP.
MAX.
UNIT
Document Number: 83728
Rev. 1.6, 16-May-08
TCED2100/TCED4100
Optocoupler, Photodarlington Output,
Dual Channel, High Gain
Vishay Semiconductors
IF
IF
0
0
+ V CC
IF
tp
IC
t
100 %
90 %
I C = 10 mA
R G = 50 Ω
tp
= 0.01
T
10 %
0
t p = 50 s
tr
td
Channel I
Channel II
50 Ω
RL
14779
Oscilloscope
R I = 1 MΩ
C I = 20 pF
t on
tp
td
tr
t on (= td + tr)
Pulse duration
Delay time
Rise time
Turn-on time
ts
tf
t off
ts
tf
t off (= ts + tf)
t
Storage time
Fall time
Turn-off time
96 11698
Fig. 3 - Test Circuit, Non-Saturated Operation
Fig. 4 - Switching Times
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
I F = 10 mA
VF - Forward Voltage (V)
1.2
1.1
1.0
0.9
0.8
0
14389
40
60
80
100
Tamb - Ambient Temperature (°C)
1.5
CTR rel - Relative Current Transfer Ratio
1.3
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
20
Fig. 5 - Forward Voltage vs. Ambient Temperature
VCE = 5 V
I F = 1 mA
1.4
14391
0.5
- 30 - 20 - 10 0 10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 7 - Relative Current Transfer Ratio vs. Ambient Temperature
100 000
I CEO - Collector Dark Current,
with Open Base (nA)
1000
I F - Forward Current (mA)
10 000
100
10
1
1000
V F - Forward Voltage (V)
Fig. 6 - Forward Current vs. Forward Voltage
Document Number: 83728
Rev. 1.6, 16-May-08
100
10
1
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
14390
VCE = 10 V
IF = 0
20
14392
30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 8 - Collector Dark Current vs. Ambient Temperature
For technical questions, contact: [email protected]
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807
TCED2100/TCED4100
Vishay Semiconductors
Optocoupler, Photodarlington Output,
Dual Channel, High Gain
1000
10 000
CTR - Current Transfer Ratio (%)
IC - Collector Current (mA)
VCE = 2 V
100
10
1
VCE = 2 V
1000
100
0.1
0.1
14393
1
10
I F - Forward Current (mA)
10
0.1
100
14396
Fig. 9 - Collector Current vs. Forward Current
1
10
I F - Forward Current (mA)
100
Fig. 12 - Current Transfer Ratio vs. Forward Current
100
I C - Collector Current (mA)
I F = 2 mA
1 mA
10
0.5 mA
0.2 mA
1
0.1 mA
0.1
0.1
1
10
100
VCE - Collector Emitter Voltage (V)
14394
V CEsat - Collector Emitter Saturation Voltage (V)
Fig. 10 - Collector Current vs. Collector Emitter Voltage
1.1
CTR = 200 % used
1.0
100 %
0.9
50 %
25 %
0.8
0.7
0.6
14395
1
10
100
I C - Collector Current (mA)
Fig. 11 - Collector Emitter Saturation Voltage vs. Collector Current
www.vishay.com
808
For technical questions, contact: [email protected]
Document Number: 83728
Rev. 1.6, 16-May-08
TCED2100/TCED4100
Optocoupler, Photodarlington Output,
Dual Channel, High Gain
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
< 9.8
7.62 nom.
4.4 ± 0.2
3.6 ± 0.1
9.5 ± 0.2
6.3 ± 0.1
3.3
0.25 ± 0.05
0.53 ± 0.05
9 ± 0.8
1.32 ± 0.05
2.54 nom.
3 x 2.54 = 7.62
8
7
6
5
1
2
3
4
Weight: ca. 0.55 g
Creepage distance: > 6 mm
Air path: > 6 mm
after mounting on PC board
technical drawings
according to DIN
specifications
14784
< 20
3.6 ± 0.1
7.62 nom.
6.3 ± 0.1
3.3
4.4 ± 0.2
19.7 ± 0.2
5
0.25 ± 0.0
0.53 ± 0.05
9 ± 0.8
1.32 ± 0.05
2.54 nom.
7 x 2.54 = 17.78
16 15 14 13 12 11 10 9
Weight: ca. 1.08 g
Creepage distance: > 6 mm
Air path: > 6 mm
after mounting on PC board
technical drawings
according to DIN
specifications
14783
1
Document Number: 83728
Rev. 1.6, 16-May-08
2
3
4
5
6
7
8
For technical questions, contact: [email protected]
www.vishay.com
809
TCED2100/TCED4100
Vishay Semiconductors
Optocoupler, Photodarlington Output,
Dual Channel, High Gain
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It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
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respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
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depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
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claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number: 83728
Rev. 1.6, 16-May-08
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Revision: 02-Oct-12
1
Document Number: 91000