TCET1110/TCET1110G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C Rated FEATURES • CTR offered in 9 groups • Isolation materials according to UL94-VO • Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664) C • Climatic classification 55/100/21 (IEC 60068 part 1) E 17918_1 • Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection 1 A • Low temperature coefficient of CTR V D E C • Temperature range - 40 to + 110 °C • Rated impulse VIOTM = 8 kVpeak C voltage (transient overvoltage) • Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV DESCRIPTION The TCET1110/ TCET1110G consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-pin plastic dual inline package. The elements are mounted on one leadframe, providing a fixed distance between input and output for highest safety requirements. • Rated isolation VIOWM = 600 VRMS VDE STANDARDS • Thickness through insulation ≥ 0.75 mm These couplers perform safety functions according to the following equipment standards: • External creepage distance > 8 mm • DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending Optocoupler for electrical safety requirements • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • IEC 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) • VDE 0804 Telecommunication apparatus and data processing • IEC 60065 Safety for mains-operated household apparatus electronic and related voltage • Rated recurring VIORM = 848 peak peak (RMS includes voltage DC) (repetitive) • Creepage current resistance according to VDE 0303/ IEC 60112 Comparative Tracking Index: CTI ≥ 175 • Lead (Pb)-free component AGENCY APPROVALS • UL1577, file no. E76222 system code U, double protection • BSI: EN 60065:2002, EN 60950:2000 certificate no. 7081 and 7402 • DIN EN 60747-5-2 (VDE 0884) DIN EN 60747-5-5 pending • FIMKO APPLICATIONS • Switch-mode power supplies • Line receiver • Computer peripheral interface • Microprocessor system interface • Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl. class I - IV at mains voltage ≤ 300 V - for appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-2 (VDE 0884)/ DIN EN 60747-5-5 pending. Document Number: 83546 Rev. 1.8, 21-Nov-07 For technical questions, contact: [email protected] www.vishay.com 1 TCET1110/TCET1110G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C Rated ORDER INFORMATION PART REMARKS TCET1110 TCET1111 TCET1112 TCET1113 TCET1114 TCET1115 TCET1116 TCET1117 TCET1118 TCET1119 TCET1110G TCET1111G TCET1112G TCET1113G TCET1114G TCET1115G TCET1116G TCET1117G TCET1118G TCET1119G CTR 50 to 600 %, DIP-4 CTR 40 to 80 %, DIP-4 CTR 63 to 125 %, DIP-4 CTR 100 to 200 %, DIP-4 CTR 160 to 320 %, DIP-4 CTR 50 to 150 %, DIP-4 CTR 100 to 300 %, DIP-4 CTR 80 to 160 %, DIP-4 CTR 130 to 260 %, DIP-4 CTR 200 to 400 %, DIP-4 CTR 50 to 600 %, DIP-4 CTR 40 to 80 %, DIP-4 CTR 63 to 125 %, DIP-4 CTR 100 to 200 %, DIP-4 CTR 160 to 320 %, DIP-4 CTR 50 to 150 %, DIP-4 CTR 100 to 300 %, DIP-4 CTR 80 to 160 %, DIP-4 CTR 130 to 260 %, DIP-4 CTR 200 to 400 %, DIP-4 Note 4 Pin = single channel G = lead form 10.16 mm; G is not marked on the body ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA IFSM 1.5 A Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V IC 50 mA ICM 100 mA tP ≤ 10 µs Forward surge current OUTPUT Collector current tP/T = 0.5, tP ≤ 10 ms Collector peak current COUPLER Isolation test voltage (RMS) VISO 5000 VRMS Operating ambient temperature range Tamb - 40 to + 110 °C Storage temperature range Tstg - 55 to + 125 °C Tsld 260 °C Soldering temperature t = 1 min 2 mm from case, ≤ 10 s Note Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 83546 Rev. 1.8, 21-Nov-07 TCET1110/TCET1110G Optocoupler, Phototransistor Output, Vishay Semiconductors High Temperature, 110 °C Rated THERMAL CHARACTERISTICS (1) TEST CONDITION SYMBOL VALUE UNIT LED power dissipation PARAMETER at 25 °C Pdiss 100 mW Output power dissipation at 25 °C Pdiss 150 mW Maximum LED junction temperature Tjmax 125 °C Maximum output die junction temperature Tjmax 125 °C Thermal resistance, junction emitter to board θEB 173 °C/W Thermal resistance, junction emitter to case θEC 149 °C/W Thermal resistance, junction detector to board θDB 111 °C/W Thermal resistance, junction detector to case θDC 127 °C/W Thermal resistance, junction emitter to junction detector θED 173 °C/W Thermal resistance, board to ambient(2) θBA 197 °C/W Thermal resistance, case to ambient(2) θCA 4041 °C/W Notes (1) The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal Characteristics of optocouplers application note. (2) For 2 layer FR4 board (4" x 3" x 0.062) TA θCA Package TC θEC θDC θDE TJD TJE θDB θEB TB θBA 19996 TA Document Number: 83546 Rev. 1.8, 21-Nov-07 For technical questions, contact: [email protected] www.vishay.com 3 TCET1110/TCET1110G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C Rated ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. 1.6 UNIT INPUT Forward voltage IF = 50 mA VF 1.25 VR = 0, f = 1 MHz Cj 50 Collector emitter voltage IC = 1 mA VCEO 70 V Emitter collector voltage IE = 100 µA VECO 7 V VCE = 20 V, If = 0, E = 0 ICEO Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 110 kHz f = 1 MHz Ck 0.3 pF Junction capacitance V pF OUTPUT Collector emitter cut-off current 10 100 nA 0.3 V COUPLER Coupling capacitance Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER TEST CONDITION VCE = 5 V, IF = 1 mA IC/IF VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 10 mA www.vishay.com 4 PART SYMBOL MIN. TYP. TCET1111 TCET1111G CTR 13 30 % TCET1112 TCET1112G CTR 22 45 % TCET1113 TCET1113G CTR 34 70 % TCET1114 TCET1114G CTR 56 90 % TCET1110 TCET1110G CTR 50 600 % TCET1115 TCET1115G CTR 50 150 % TCET1116 TCET1116G CTR 100 300 % TCET1117 TCET1117G CTR 80 160 % TCET1118 TCET1118G CTR 130 260 % TCET1119 TCET1119G CTR 200 400 % TCET1111 TCET1111G CTR 40 80 % TCET1112 TCET1112G CTR 63 125 % TCET1113 TCET1113G CTR 100 200 % TCET1114 TCET1114G CTR 160 320 % For technical questions, contact: [email protected] MAX. UNIT Document Number: 83546 Rev. 1.8, 21-Nov-07 TCET1110/TCET1110G Optocoupler, Phototransistor Output, Vishay Semiconductors High Temperature, 110 °C Rated MAXIMUM SAFETY RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF 130 mA Pdiss 265 mW VIOTM 8 kV Tsi 150 °C INPUT Forward current OUTPUT Power dissipation COUPLER Rated impulse voltage Safety temperature Note According to DIN EN 60747-5-2 (VDE0884)/ DIN EN 60747-5-5 pending (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. INSULATION RATED PARAMETERS TEST CONDITION SYMBOL MIN. Partial discharge test voltage routine test PARAMETER 100 %, ttest = 1 s Vpd 1.6 kV Partial discharge test voltage lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 8 kV Vpd 1.3 kV VIO = 500 V RIO 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 1011 Ω RIO 109 Ω Insulation resistance Ptot - Total Power Dissipation (mW) VIO = 500 V, Tamb = 150 °C (construction test only) TYP. MAX. UNIT VIOTM 300 t1, t2 t3 , t4 ttest tstres Phototransistor Psi (mW) 250 200 = 1 to 10 s =1s = 10 s = 12 s VPd 150 VIOWM VIORM 100 IR-Diode Isi (mA) 50 0 94 9182 0 0 25 50 75 100 125 Tsi - Safety Temperature (°C) Fig. 1 - Derating Diagram Document Number: 83546 Rev. 1.8, 21-Nov-07 150 13930 t3 ttest t4 t1 tTr = 60 s t2 t stres t Fig. 2 - Test Pulse Diagram for Sample Test according to DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-; IEC60747 For technical questions, contact: [email protected] www.vishay.com 5 TCET1110/TCET1110G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C Rated SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL Delay time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) MIN TYP. MAX UNIT td 3 µs Rise time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) tr 3 µs Fall time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) tf 4.7 µs Storage time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) ts 0.3 µs Turn-on time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) ton 6 µs Turn-off time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) toff 5 µs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) ton 9 µs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) toff 10 µs IF IF IC = 2 mA; adjusted through input amplitude RG = 50 tp = 0.01 T tp = 50 µs Channel I Channel II 50 0 IC +5V IF 0 Oscilloscope RL = 1 M CL = 20 pF t 100 % 90 % 10 % 0 100 tp td tr t on (= t d + tr) 95 10804 tp tr td t on ts Pulse Duration Delay Time Rise Time Turn-on Time ts tf t off (= ts + tf) tf t off t Storage Time Fall Time Turn-off Time 96 11698 Fig. 3 - Test Circuit, Non-Saturated Operation IF IF = 10 mA 0 Fig. 5 - Switching Times +5V IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω 1 kΩ Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 95 10843 Fig. 4 - Test Circuit, Saturated Operation www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 83546 Rev. 1.8, 21-Nov-07 TCET1110/TCET1110G Optocoupler, Phototransistor Output, Vishay Semiconductors High Temperature, 110 °C Rated TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Ptot - Total Power Dissipation (mW) 300 10000 ICEO - Collector Dark Current, with open Base (nA) Coupled Device 250 200 Phototransistor 150 IR–Diode 100 50 20 40 60 80 100 10 1 0 120 Tamb - Ambient Temperature (°C) 16736 Fig. 6 - Total Power Dissipation vs. Ambient Temperature 80 100 120 VCE = 5 V IC - Collector Current (mA) IF - Forward Current (mA) 60 Fig. 9 - Collector Dark Current vs. Ambient Temperature 10 1 10 1 0.1 0.01 0.1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage (V) 96 11862 Fig. 7 - Forward Current vs. Forward Voltage 1 100 10 IF - Forward Current (mA) 95 11027 Fig. 10 - Collector Current vs. Forward Current 1.20 100 IC - Collector Current (mA) CTRrel - Relative Current Transfer Ratio 40 100 100 1.00 VCE = 5 V IF = 5 mA 0.60 0.40 0.20 0.00 - 40 - 20 16737 20 Tamb - Ambient Temperature 16738 1000 0.80 10 V 100 0 0 VCE = 30 V 1000 20 mA IF = 50 mA 10 mA 10 5 mA 2 mA 1 1 mA 0.1 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 8 - Relative Current Transfer Ratio vs. Ambient Temperature Document Number: 83546 Rev. 1.8, 21-Nov-07 0.1 95 10985 1 100 10 VCE - Collector Emitter Voltage (V) Fig. 11 - Collector Current vs. Collector Emitter Voltage For technical questions, contact: [email protected] www.vishay.com 7 TCET1110/TCET1110G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C Rated ton/toff - Turn-on/Turn-off Time (µs) 1.0 VCEsat - Collector Emitter Saturation Voltage (V) 20 % used 0.8 CTR = 50 % used 0.6 0.4 0.2 10 % used 0 1 10 CTR - Current Transfer Ratio (%) 30 toff 20 10 ton 0 0 95 11031 Fig. 12 - Collector Emitter Saturation Voltage vs. Collector Current Saturated Operation VS = 5 V RL = 1 kΩ 40 100 IC - Collector Current (mA) 95 11028 50 5 10 15 20 IF - Forward Current (mA) Fig. 15 - Turn-on/off Time vs. Forward Current 1000 VCE = 5 V 100 10 1 0.1 1 100 10 IF - Forward Current (mA) 95 11029 ton/toff- Turn-on /Turn-off Time (µs) Fig. 13 - Current Transfer Ratio vs. Forward Current 10 8 Non Saturated Operation VS = 5 V RL = 100 Ω ton 6 toff 4 2 0 0 95 11030 2 4 6 8 IC - Collector Current (mA) Fig. 14 - Turn-on/off Time vs. Collector Current www.vishay.com 8 For technical questions, contact: [email protected] Document Number: 83546 Rev. 1.8, 21-Nov-07 TCET1110/TCET1110G Optocoupler, Phototransistor Output, Vishay Semiconductors High Temperature, 110 °C Rated PACKAGE DIMENSIONS in millimeters 7.62 nom. 3.6 ± 0.1 4.4 ± 0.2 < 4.75 4.5 ± 0.2 6.3 ± 0.1 5 3.3 0.25 ± 0.0 0.53 ± 0.05 9 ± 0.8 1.32 ± 0.05 2.54 nom. E. g.: Special Features: Endstackable to 2.54 mm (0.100") Spacing 4 3 Weight: ca. 0.25 g Creepage Distance: > 6 mm Air Path: > 6 mm after Mounting on PC Board 1 2 2.54 technical drawings according to DIN specifications 2.54 14789 7.62 nom. 4.5 ± 0.2 6.3 ± 0.1 0.53 ± 0.05 4.4 ± 0.2 3.6 ± 0.1 7.25 ± 0.2 < 4.75 0.25 ± 0.05 1.32 ± 0.05 2.54 nom. 10.16 ± 0.3 E. g.: Special Features: Endstackable to 2.54 mm (0.100") Spacing 4 3 1 2 2.54 2.54 Weight: ca. 0.25 g Creepage Distance: > 8 mm Air Path: > 8 mm after Mounting on PC Board Document Number: 83546 Rev. 1.8, 21-Nov-07 For technical questions, contact: [email protected] technical drawings according to DIN specifications 14792 www.vishay.com 9 TCET1110/TCET1110G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C Rated OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 10 For technical questions, contact: [email protected] Document Number: 83546 Rev. 1.8, 21-Nov-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1