AON3818

AON3818
24V Dual N-Channel AlphaMOS
General Description
Product Summary
VDS
• Trench Power AlphaMOS (αMOS LV) technology
• Low RDS(ON)
• Low Gate Charge
• ESD protection
• RoHS and Halogen-Free Compliant
ID (at VGS=4.5V)
24V
8A
RDS(ON) (at VGS=4.5V)
< 13.5mΩ
RDS(ON) (at VGS=4.0V)
< 14mΩ
RDS(ON) (at VGS=3.7V)
< 15mΩ
RDS(ON) (at VGS=3.1V)
< 17mΩ
RDS(ON) (at VGS=2.5V)
< 21mΩ
Typical ESD protection
HBM Class 2
Applications
• Battery protection switch
• Mobile device battery charging and discharging
DFN 3x3
Top View
D2
D1
Bottom View
Top View
1
2
3
4
S2
G2
S1
G1
8
D1/D2
7
6
5
D1/D2
G1
G2
D1/D2
D1/D2
S2
S1
Pin 1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AON3818
DFN 3x3
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
VDS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current G
VGS
TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev.1.0: May 2014
Steady-State
Steady-State
A
2.7
W
1.7
TJ, TSTG
Symbol
t ≤ 10s
V
32
PD
TA=70°C
±12
6
IDM
TA=25°C
Power Dissipation B
Units
V
8
ID
TA=70°C
Maximum
24
RθJA
RθJL
-55 to 150
Typ
35
60
15
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°C
Max
45
75
20
Units
°C/W
°C/W
°C/W
Page 1 of 5
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Typ
Max
Units
24
V
VDS=24V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±10V
±10
µA
Gate Threshold Voltage
VDS=VGS, ID=250µA
0.4
0.8
1.2
V
VGS=4.5V, ID=8A
7.5
10.8
13.5
19
TJ=55°C
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
10.5
15
VGS=4.0V, ID=6A
7.8
11.2
14
VGS=3.7V, ID=6A
8
11.5
15
VGS=3.1V, ID=4A
8
12.5
17
VGS=2.5V, ID=4A
8.6
14.8
21
gFS
Forward Transconductance
VDS=5V, ID=8A
42
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.66
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=12V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
mΩ
S
1
V
4
A
840
pF
210
pF
205
pF
2
kΩ
9.5
VGS=4.5V, VDS=12V, ID=8A
µA
5
15
nC
1.5
nC
Gate Drain Charge
4.5
nC
Turn-On DelayTime
0.3
µs
VGS=4.5V, VDS=12V, RL=1.5Ω,
RGEN=3Ω
0.8
µs
1.7
µs
5.2
µs
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: May 2014
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Page 2 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
4.5V
25
VDS=5V
25
2V
4V
20
ID(A)
20
ID (A)
30
2.5V
3.1V
3.7V
15
10
125°C
15
10
5
5
25°C
VGS=1.5V
0
0
0
1
2
3
4
0
5
0.5
1.5
2
2.5
3
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
18
Normalized On-Resistance
1.6
VGS=2.5V
16
RDS(ON) (mΩ)
1
14
VGS=3.1V
VGS=3.7V
12
10
VGS=4.5V
VGS=4V
VGS=4.5V
ID=8A
1.4
VGS=4V
ID=6A
VGS=2.5V
ID=4A
1.2
VGS=3.7V
ID=6A
1
VGS=3.1V
ID=4A
0.8
8
0
4
8
12
0
16
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
35
1.0E+02
30
1.0E+01
25
1.0E+00
20
IS (A)
RDS(ON) (mΩ)
ID=8A
125°C
1.0E-01
15
1.0E-02
10
1.0E-03
25°C
5
125°C
25°C
1.0E-04
0
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: May 2014
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
1200
VDS=12V
ID=8A
1000
Capacitance (pF)
VGS (Volts)
4
3
2
Ciss
800
600
400
Coss
1
200
Crss
0
0
0
2
4
6
8
10
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
24
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
100µs
1.0
10ms
0.0
0.01
100
10
TJ(Max)=150°C
TA=25°C
0.1
Power (W)
ID (Amps)
16
10µs
10µs
1ms
ZθJA Normalized Transient
Thermal Resistance
12
1000
10.0
1
8
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10
4
DC
0.1
1
10
VDS (Volts)
VGS> or equal to 2.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1
1E-05 0.0001 0.001 0.01
100
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: May 2014
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Page 4 of 5
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: May 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 5 of 5