AO6401A 30V P-Channel MOSFET General Description Product Summary The AO6401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V -5A RDS(ON) (at VGS=-10V) < 47mΩ VDS RDS(ON) (at VGS =-4.5V) < 64mΩ RDS(ON) (at VGS=-2.5V) < 85mΩ TSOP6 Top View D Bottom View Top View D 1 6 D 2 5 D G 3 4 S D G S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 1: Mar 2011 Steady-State Steady-State A 2 W 1.3 TJ, TSTG Symbol t ≤ 10s V -28 PD TA=70°C ±12 -4 IDM TA=25°C B Units V -5 ID TA=70°C C Maximum -30 RθJA RθJL www.aosmd.com -55 to 150 Typ 47.5 74 37 °C Max 62.5 110 50 Units °C/W °C/W °C/W Page 1 of 5 AO6401A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -28 nA -1.3 V 39 47 60 74 VGS=-4.5V, ID=-4A 45 64 mΩ VGS=-2.5V, ID=-1A 59 85 mΩ 18 TJ=125°C Forward Transconductance VDS=-5V, ID=-5A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current Output Capacitance Reverse Transfer Capacitance Rg Gate resistance A -0.7 DYNAMIC PARAMETERS Ciss Input Capacitance Coss µA ±100 gFS Crss Units -0.9 VGS=-10V, ID=-5A Static Drain-Source On-Resistance Max V VDS=-30V, VGS=0V IGSS RDS(ON) Typ 645 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz S -1 V -2.5 A 780 pF 80 4 mΩ pF 55 80 pF 7.8 12 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 14 17 nC Qg(4.5V) Total Gate Charge 7 8.5 nC Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time VGS=-10V, VDS=-15V, ID=-5A 1.5 nC Gate Drain Charge 2.5 nC Turn-On DelayTime 6.5 ns 3.5 ns VGS=-10V, VDS=-15V, RL=3Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 41 ns 9 ns trr Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/µs 11 Qrr Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs 3.5 13.5 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: Mar 2011 www.aosmd.com Page 2 of 5 AO6401A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 -4.5V -10V VDS=-5V 20 15 -7V -ID(A) -ID (A) 15 -2.5V 10 125°C 10 5 25°C 5 VGS=-2.0V 0 0 0 1 2 3 4 0 5 0.5 100 1.5 2 2.5 3 Normalized On-Resistance 1.8 80 RDS(ON) (mΩ ) 1 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=-2.5V 60 VGS=-4.5V 40 VGS=-10V 1.6 VGS=-10V ID=-5A 1.4 17 VGS=-4.5V 5 ID=-4A 2 1.2 VGS=-2.5V ID=-1A 1 10 0.8 20 0 2 4 6 8 0 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 150 1.0E+01 ID=-5A 130 1.0E+00 110 1.0E-01 90 -IS (A) RDS(ON) (mΩ ) 40 125°C 125°C 1.0E-02 1.0E-03 70 25°C 50 25°C 1.0E-04 1.0E-05 30 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1: Mar 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO6401A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=-15V ID=-5A 8 800 Capacitance (pF) -VGS (Volts) Ciss 6 4 600 400 2 200 0 0 0 5 10 Qg (nC) Figure 7: Gate-Charge Characteristics 15 Coss Crss 0 100.0 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics 25 10000 TA=25°C 10µs RDS(ON) limited 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 1000 Power (W) -ID (Amps) 10.0 100 10 10s DC 0.0 1 0.01 0.1 1 10 100 0.00001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=110°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1: Mar 2011 www.aosmd.com Page 4 of 5 AO6401A Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 1: Mar 2011 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5