AOS Semiconductor Product Reliability Report

AOS Semiconductor
Product Reliability Report
AO4604/AO4604L,
rev B
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
495 Mercury Drive
Sunnyvale, CA 94085
U.S.
Tel: (408) 830-9742
www.aosmd.com
Jan 11, 2006
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This AOS product reliability report summarizes the qualification result for AO4604. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AO4604passes AOS quality and
reliability requirements. The released product will be categorized by the process family and be
monitored on a quarterly basis for continuously improving the product quality.
Table of Contents:
I.
II.
III.
IV.
V.
Product Description
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
Quality Assurance Information
I. Product Description:
The AO4604 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low
gate charge. The complementary MOSFETs may be used in power inverters, and other
applications. Standard Product AO4604 is Pb-free (meets ROHS & Sony 259 specifications).
AO4604L is a Green Product ordering option. AO4604 and AO4604L are electrically identical.
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Max p-channel
Units
Drain-Source Voltage
VDS
30
-30
V
Gate-Source Voltage
VGS
±20
±20
V
6.9
-5
ID
5.8
-4.2
IDM
30
-20
2
2
1.44
1.44
-55 to 150
-55 to 150
Continuous Drain
Current
TA=25°C
TA=70°C
Pulsed Drain Current
TA=25°C
Power Dissipation
TA=70°C
Junction and Storage
Temperature Range
PD
TJ, TSTG
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Maximum Junction-tot ≤ 10s
Ambient
RθJA
Maximum Junction-toSteadyAmbient
State
SteadyMaximum Junction-to-Lead
RθJL
State
A
W
°C
Typ
Max
Units
48
62.5
°C/W
74
110
°C/W
35
40
°C/W
2
II. Die / Package Information:
Process
AO4604
Standard sub-micron
low voltage N/P channel
AO4604L (Green Compound)
Standard sub-micron
low voltage N/P channel
Package Type
Lead Frame
Die Attach
Bond wire
Mold Material
Filler % (Spherical/Flake)
Flammability Rating
Backside Metallization
Moisture Level
8 lead SOIC
Copper with Solder Plate
Silver epoxy
2 mils Au wire
Epoxy resin with silica filler
90/10
UL-94 V-0
Ti / Ni / Ag
Up to Level 1 *
8 lead SOIC
Copper with Solder Plate
Silver epoxy
2 mils Au wire
Epoxy resin with silica filler
100/0
UL-94 V-0
Ti / Ni / Ag
Up to Level 1*
Note * based on info provided by assembler and mold compound supplier
III. Result of Reliability Stress for AO4604 (Standard) & AO4604L (Green)
Test Item
Test Condition
Time Point
Solder
Reflow
Precondition
Standard: 1hr PCT+3
cycle [email protected]°c
Green: 168hr 85°c/85RH
+3 cycle [email protected]°c
0hr
HTGB
Temp = 150°C,
Vgs=100% of Vgsmax
168 / 500
hrs
Lot Attribution
Total
Sample size
Number of
Failures
Standard: 49 lots
Green: 16 lots
9625 pcs
0
2 lots
164 pcs
0
(note A*)
77+5 pcs / lot
1000 hrs
HTRB
Temp = 150°C,
Vds=80% of Vdsmax
168 / 500
hrs
2 lots
(note A*)
HAST
Pressure Pot
130 +/- 2°C, 85%RH, 33.3
psi, Vgs = 80% of Vgs
max
121°C, 15+/-1 PSIG,
RH=100%
1000 hrs
100 hrs
Standard: 33 lots
Green: 13 lots
164 pcs
0
77+5 pcs / lot
2530 pcs
0
50+5 pcs / lot
96 hrs
(note B**)
Standard: 49 lots
Green: 16 lots
3575 pcs
0
50+5 pcs / lot
Temperature
Cycle
-65°c to 150°C, air to air,
0.5hr per cycle
250 / 500
cycles
(note B**)
Standard: 49 lots
Green: 15 lots
3520 pcs
0
50+5 pcs / lot
(note B**)
DPA
CSAM
Internal Vision
Cross-section
X-ray
NA
5
5
5
5
5
5
0
NA
5
5
0
3
Bond
Integrity
Room Temp
150°C bake
150°C bake
0hr
250hr
500hr
40
40
40
40 wires
40 wires
40 wires
0
Solderability
230°C
5 sec
15
15 leads
0
Note A: The HTGB and HTRB reliability data presents total of available AO4604and AO4604L
burn-in data up to the published date.
Note B: The pressure pot, temperature cycle and HAST reliability data for AO4604and AO4604L
comes from the AOS generic package qualification data.
IV. Reliability Evaluation
FIT rate (per billion): 32
MTTF = 3567 years
In general, 500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of
lifetime at 55 deg C operating conditions (by applying the Arrhenius equation with an activation
energy of 0.7eV and 60% of upper confidence level on the failure rate calculation). AOS reliability
group also routinely monitors the product reliability up to 1000 hr at and performs the necessary
failure analysis on the units failed for reliability test(s). The presentation of FIT rate for the
individual product reliability is restricted by the actual burn-in sample size of the selected product
(AO4604). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one
failure per billion hours.
Failure Rate = Chi2 x 109 / [2 (N) (H) (Af)]
= 1.83 x 109 / [2 (164) (168) (258) + 2 (164) (500) (258)] = 32
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MTTF = 10 / FIT = 3.12 x 107hrs = 3567years
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [ Af ] = Exp [Ea / k ( 1/Tj u – 1/Tj s )]
Acceleration Factor ratio list:
Af
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
130 deg C
150 deg C
258
87
32
13
5.64
2.59
1
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u = The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5 eV / K
V. Quality Assurance Information
Acceptable Quality Level for outgoing inspection: 0.1% for electrical and visual.
Guaranteed Outgoing Defect Rate: < 25 ppm
Quality Sample Plan: conform to Mil-Std-105D
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