AOSMD AOP605_06

AOS Semiconductor
Product Reliability Report
AOP605/AOP605L,
rev B
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
495 Mercury Drive
Sunnyvale, CA 94085
U.S.
Tel: (408) 830-9742
www.aosmd.com
Apr 4, 2006
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This AOS product reliability report summarizes the qualification result for AOP605. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AOP605passes AOS quality and
reliability requirements. The released product will be categorized by the process family and be
monitored on a quarterly basis for continuously improving the product quality.
Table of Contents:
I.
II.
III.
IV.
V.
Product Description
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
Quality Assurance Information
I. Product Description:
The AOP605 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of
applications. Standard Product AOP605 is Pb-free (meets ROHS & Sony 259 specifications).
AOP605L is a Green Product ordering option. AOP605 and AOP605L are electrically identical.
Absolute Maximum Ratings TA=25°C unless otherwise noted
Units
Parameter
Symbol Max n-channel
Max p-channel
Drain-Source Voltage
VDS
30
-30
V
Gate-Source Voltage
VGS
±20
±20
V
ID
7.5
-6.6
6
-5.3
30
-30
2.5
2.5
1.6
1.6
-55 to 150
-55 to 150
Continuous
Drain Current
TA=25°C
TA=70°C
Pulsed Drain Current
Power
Dissipation
IDM
TA=25°C
TA=70°C
Junction and Storage
Temperature Range
PD
TJ, TSTG
A
W
°C
Thermal Characteristics : n-channel, Schottky and p-channel
Parameter
Maximum Junctionto-Ambient
Maximum Junctionto-Ambient
Maximum Junctionto-Lead
Maximum Junctionto-Ambient
Maximum Junctionto-Ambient
Maximum Junctionto-Lead
Symbol
t ≤ 10s
SteadyState
SteadyState
t ≤ 10s
SteadyState
SteadyState
RθJA
RθJL
RθJA
RθJL
Device
Typ
Max
n-ch
40
50
n-ch
67
80
n-ch
33
40
p-ch
38
50
p-ch
66
80
p-ch
30
40
Units
°C/W
2
II. Die / Package Information:
Process
Package Type
Lead Frame
Die Attach
Bond wire
Mold Material
Filler % (Spherical/Flake)
Flammability Rating
Backside Metallization
Moisture Level
AOP605
AOP605L (Green Compound)
Standard sub-micron
Standard sub-micron
low voltage complementary process
8 lead PDIP
8 lead PDIP
Copper with Solder Plate
Copper with Solder Plate
Silver epoxy
Silver epoxy
2 mils Au wire
2 mils Au wire
Epoxy resin with silica filler
Epoxy resin with silica filler
100/0
90/10
UL-94 V-0
UL-94 V-0
Ti / Ni / Ag
Ti / Ni / Ag
Up to Level 1 *
Up to Level 1*
Note * based on info provided by assembler and mold compound supplier
III. Result of Reliability Stress for AOP605 (Standard) & AOP605L (Green)
Test Item
Test Condition
Time Point
Solder
Reflow
Precondition
Standard: 1hr PCT+3
cycle [email protected]°c
Green: 168hr 85°c
/85%RH +3 cycle
[email protected]°c
Temp = 150°c,
Vgs=100% of Vgsmax
0hr
HTGB
168 / 500
hrs
Lot Attribution
Total
Sample size
Number of
Failures
Standard: 11 lots
Green: 4 lots
2365 pcs
0
6 lots
492 pcs
0
(Note A*)
77+5 pcs / lot
1000 hrs
HTRB
Temp = 150°c,
Vds=80% of Vdsmax
168 / 500
hrs
1000 hrs
HAST
Pressure Pot
130 +/- 2°c, 85%RH, 33.3
psi, Vgs = 80% of Vgs
max
121°c, 15+/-1 PSIG,
RH=100%
100 hrs
6 lots
(Note A*)
Standard: 11 lots
Green: 4 lots
492 pcs
0
77+5 pcs / lot
825 pcs
0
50+5 pcs / lot
96 hrs
(Note B**)
Standard: 11 lots
Green: 3 lots
770 pcs
0
50+5 pcs / lot
Temperature
Cycle
-65°c to 150 °c,
air to air
250 / 500
cycles
(Note B**)
Standard: 11 lots
Green: 3 lots
770 pcs
0
50+5 pcs / lot
(Note B**)
DPA
CSAM
Internal Vision
Cross-section
X-ray
NA
5
5
5
5
5
5
0
NA
5
5
0
3
Bond
Integrity
Room Temp
150°c bake
150°c bake
0hr
250hr
500hr
40
40
40
40 wires
40 wires
40 wires
0
Solderability
230°c
5 sec
15
15 leads
0
Note A: The HTGB and HTRB reliability data presents total of available AOP605and AOP605L
burn-in data up to the published date.
Note B: The pressure pot, temperature cycle and HAST reliability data for AOP605and AOP605L
comes from the AOS generic package qualification data.
IV. Reliability Evaluation
FIT rate (per billion): 10
MTTF = 11415 years
In general, 500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of
lifetime at 55 deg C operating conditions (by applying the Arrhenius equation with an activation
energy of 0.7eV and 60% of upper confidence level on the failure rate calculation). AOS reliability
group also routinely monitors the product reliability up to 1000 hr at and performs the necessary
failure analysis on the units failed for reliability test(s).
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size of the selected product (AOP605). Failure Rate Determination is based on JEDEC
Standard JESD 85. FIT means one failure per billion hours.
Failure Rate = Chi2 x 109 / [2 (N) (H) (Af)]
= 1.83 x 109 / [2 (164) (168) (258) + 2 (2×164) (500) (258) + 2 (164) (1000) (258)] = 10
MTTF = 109 / FIT = 1.0 x 108hrs =11415 years
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
Af
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
130 deg C
150 deg C
258
87
32
13
5.64
2.59
1
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u = The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K
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V. Quality Assurance Information
Acceptable Quality Level for outgoing inspection: 0.1% for electrical and visual.
Guaranteed Outgoing Defect Rate: < 25 ppm
Quality Sample Plan: conform to Mil-Std-105D
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