IRF4905S/L
l
l
l
l
l
l
l
Advanced Process Technology
Surface Mount (IRF4905S)
Low-profile through-hole (IRF4905L)
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
TO-263
TO-262
Description
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2 Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF4905L) is available for lowprofile applications.
D
VDSS = -55V
RDS(on) = 0.02Ω
G
ID = -74A
S
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Max.
Continuous Drain Current, V GS @ -10V
Continuous Drain Current, V GS @ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Units
-74
-52
-260
3.8
200
1.3
± 20
930
-38
20
-5.0
-55 to + 175
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
2014-8-28
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
1
Typ.
Max.
Units
–––
–––
0.75
40
°C/W
www.kersemi.com
IRF4905S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
-55
–––
–––
-2.0
21
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.05
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
18
99
61
96
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
3400
1400
640
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
0.02
Ω
VGS = -10V, ID = -38A
-4.0
V
VDS = VGS, I D = -250µA
–––
S
VDS = -25V, ID = -38A
-25
VDS = -55V, VGS = 0V
µA
-250
VDS = -44V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
180
ID = -38A
32
nC
VDS = -44V
86
VGS = -10V, See Fig. 6 and 13
–––
VDD = -28V
–––
ID = -38A
ns
–––
RG = 2.5Ω
–––
RD = 0.72Ω, See Fig. 10
Between lead,
nH
–––
and center of die contact
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
IS
I SM
V SD
t rr
Q rr
ton
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– -74
showing the
A
G
integral reverse
––– ––– -260
p-n junction diode.
S
––– ––– -1.6
V
TJ = 25°C, IS = -38A, VGS = 0V
––– 89 130
ns
TJ = 25°C, IF = -38A
––– 230 350
nC di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 1.3mH
Uses IRF4905 data and test conditions
RG = 25Ω, IAS = -38A. (See Figure 12)
ISD ≤ -38A, di/dt ≤ -270A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2014-8-28
2
www.kersemi.com
IRF4905S/L
1000
1000
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V
TOP
-ID , D ra in -to -S o u rc e C u rre n t (A )
-ID , D ra in -to -S o u rc e C u rre n t (A )
TOP
100
10
-4.5 V
100
2 0µ s PU LS E W ID TH
TTcJ == 25°C
2 5°C
A
1
0.1
1
10
20 µ s PU LSE W ID TH
TTCJ = 175°C
1 75°C
1
100
0.1
1
10
-VD S , Drain-to-Source V oltage (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
2.0
TJ = 2 5 °C
100
TJ = 1 7 5 °C
10
V DS = -2 5 V
2 0 µ s P U L S E W ID T H
1
4
5
6
7
8
9
10
A
I D = -64 A
1.5
1.0
0.5
VG S = -10 V
0.0
-60 -40 -20
0
20
40
60
80
T J , Junction T emperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3
A
100 120 140 160 180
-VG S , Ga te-to-S o urce V oltage (V )
2014-8-28
A
100
-VD S , Drain-to-Source Voltage (V)
1000
-I D , D rain -to- S our ce C urr ent ( A )
-4.5 V
10
www.kersemi.com
IRF4905S/L
20
V GS
C is s
C rs s
C o ss
C , C a p a c ita n c e (p F )
6000
= 0 V,
f = 1M H z
= C gs + C gd , Cds SH O RTE D
= C gd
= C ds + C g d
-V G S , G a te -to -S o u rc e V o lta g e (V )
7000
5000
C is s
4000
C o ss
3000
2000
C rs s
1000
0
10
VDS = - 44V
VDS = - 28V
16
12
8
4
FOR TE ST C IR C U IT
SE E FIG U R E 1 3
0
A
1
I D = -3 8A
0
100
80
120
160
A
200
Q G , Total G ate C harge (nC)
-VD S , Drain-to-Source V oltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
-I D , D ra in C u rre n t (A )
-IS D , R e ve rse D ra in C u rre n t (A )
40
100
T J = 17 5°C
T J = 25 °C
10
VG S = 0 V
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
A
1.8
100µ s
1m s
10
10m s
T C = 2 5°C
T J = 1 75°C
Sin gle Pu lse
1
1
A
10
100
-VD S , Drain-to-Source V oltage (V )
-VS D , S ource-to-Drain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
2014-8-28
100
Fig 8. Maximum Safe Operating Area
4
www.kersemi.com
IRF4905S/L
80
RD
VDS
I D , Drain Current (A)
VGS
60
D.U.T.
RG
+
V DD
-10V
40
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
20
td(on)
tr
t d(off)
tf
VGS
0
25
50
75
100
125
TC , Case Temperature
150
10%
175
( ° C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
90%
VDS
Fig 10b. Switching Time Waveforms
(Z thJC )
1
D = 0.50
Thermal Response
0.20
0.1
0.10
PDM
0.05
t1
0.02
0.01
0.01
0.00001
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + T C
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-28
5
www.kersemi.com
IRF4905S/L
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
2500
L
VDS
D .U .T
RG
IA S
- 20V
tp
VD D
A
D R IV E R
0.01 Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
TO P
BOT TO M
2000
1500
1000
500
0
A
25
I AS
ID
-1 6A
- 27A
-38 A
50
75
100
125
150
175
Starting TJ , Junction T emperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.3µF
-10V
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
IG
Charge
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
2014-8-28
.2µF
Fig 13b. Gate Charge Test Circuit
6
www.kersemi.com
IRF4905S/L
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
• dv/dt controlled by RG
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[ VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ ISD]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
2014-8-28
7
www.kersemi.com
IRF4905S/L
D2Pak Package Outline
10.54 ( .415)
10.29 ( .405)
1.40 (.055)
MAX.
-A-
1.32 (.052)
1.22 (.048)
2
1.78 (.070)
1.27 (.050)
1
10.16 (.400)
RE F .
-B -
4.69 (.185)
4.20 (.165)
6.47 (.255)
6.18 (.243)
3
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
3X
1.40 (.055)
1.14 (.045)
5.08 ( .200)
0.55 (.022)
0.46 (.018)
0.93 (.037)
3X
0.69 (.027)
0.25 (.010)
M
8.89 (.350)
RE F.
1.39 (.055)
1.14 (.045)
B A M
MINIMUM RECO MM ENDED F OO TP RINT
11.43 (.450)
LE AD ASS IG NM ENT S
1 - G AT E
2 - DRA IN
3 - S OU RC E
NO TE S:
1 DIM ENS IO NS AF T ER S OLDE R DIP .
2 DIM ENS IO NING & TO LERA NCING PE R ANS I Y 14.5M, 1982.
3 CO NT RO LLING DIME NSIO N : INCH.
4 HE AT SINK & LEAD DIMEN SION S DO NO T INCLUDE BURRS.
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
2.54 (.100)
2X
Part Marking Information
D2Pak
A
PART NU MBER
L OGO
F53 0S
9246
9B
1M
AS SEMBLY
LOT CODE
2014-8-28
8
DATE CODE
(YYW W )
YY = YEAR
W W = W EE K
www.kersemi.com
IRF4905S/L
Package Outline
TO-262 Outline
Part Marking Information
TO-262
2014-8-28
9
www.kersemi.com
IRF4905S/L
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 .6 0 (.0 6 3)
1 .5 0 (.0 5 9)
4 .1 0 (.1 6 1)
3 .9 0 (.1 5 3)
F E E D D IR E C TIO N 1 .8 5 (.0 7 3 )
11 .6 0 (. 45 7 )
11 .4 0 (. 44 9 )
1 .6 5 (.0 6 5 )
0 .3 68 (.0 14 5 )
0 .3 42 (.0 13 5 )
15 .4 2 (.60 9 )
15 .2 2 (.60 1 )
2 4 .30 (.9 5 7)
2 3 .90 (.9 4 1)
TR L
1. 75 (.0 69 )
1. 25 (.0 49 )
1 0. 90 (.4 29 )
1 0. 70 (.4 21 )
4 .7 2 (.1 3 6)
4 .5 2 (.1 7 8)
1 6. 10 (.6 34 )
1 5. 90 (.6 26 )
FE E D D IR E C TIO N
1 3.5 0 (. 532 )
1 2.8 0 (. 504 )
2 7.4 0 (1 .079 )
2 3.9 0 (.9 41)
4
33 0.0 0
(14. 17 3)
M AX .
6 0.0 0 (2 .36 2)
M IN .
N O T ES :
1. C O M F O R M S T O EIA -418 .
2. C O N T R O LLIN G D IM EN SIO N : M ILLIM E T ER .
3. D IM E N S IO N M EA S U R E D @ H U B .
4. IN C LU D E S F L AN G E D IS T O R T IO N @ O U T E R ED G E.
2014-8-28
10
26 .40 (1. 03 9)
24 .40 (.9 61 )
3
3 0.4 0 (1 .19 7)
MA X .
4
www.kersemi.com