MMBT8550 PNP Silicon Epitaxial Planar Transistors For switching and amplifier applications As complementary types the NPN transistors MMBT8050 is recommended. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25℃) PARAMETER SYMBOL VALUE UNIT Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 25 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 600 mA Power Dissipation Ptot 350 mW Junction Temperature Tj 150 ℃ Storage Temperature Range Ts - 55 to + 150 ℃ Characteristics at Ta = 25℃ PARAMETER DC Current Gain at -VCE = 1 V, -IC = 100 mA at -VCE = 1 V, -IC = 500 mA Collector Base Cutoff Current at -VCB = 35 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 2 mA Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Base Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Gain Bandwidth Product at -VCE = 5 V, -IC = 10 mA Website: www.kingtronics.com SYMBOL MMBT8550C MMBT8550D MIN. TYP. 100 160 40 hFE - MAX. UNIT 250 400 - - -ICBO - - 100 nA -V(BR)CBO 40 - - V -V(BR)CEO 25 - - V -V(BR)EBO 6 - - V -VCE(sat) - - 0.5 V -VBE(sat) - - 1.2 V fT - 100 - MHz Email: [email protected] Tel: (852) 8106 7033 Fax: (852) 8106 7099 1 MMBT8550 PNP Silicon Epitaxial Planar Transistors RATINGS AND CHARACTERISTIC CURVES MMBT8550 Note: Specifications are subject to change without notice. Website: www.kingtronics.com Email: [email protected] Tel: (852) 8106 7033 Fax: (852) 8106 7099 2