BC817 NPN Silicon Epitaxial Planar Transistors For switching, AF driver and amplifier applications These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the PNP transistors BC807 and BC808 are recommended. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25℃) PARAMETER SYMBOL VALUE UNIT Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO 5 V Collector Current IC 500 mA Power Dissipation Ptot 200 mW Thermal Resistance, Junction to Ambient RØJA 500 K/W Junction Temperature TJ 150 ℃ Storage Temperature Range TS ℃ - 55 to + 150 Electrical Characteristics at Ta = 25℃ PARAMETER DC Current Gain at VCE = 1 V, IC = 100 mA Current Gain Group SYMBOL -16 -25 -40 at VCE = 1 V, IC = 500 mA Collector Base Cutoff Current at VCB = 20 V Emitter-Base Cutoff Current at VEB = 5 V Collector Saturation Voltage at IC = 500 mA, IB = 50 mA Base-Emitter Voltage at IC = 500 mA, VCE = 1 V Gain-Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 50 MHz Collector-Base Capacitance at VCB = 10 V, f = 1 MHz Website: www.kingtronics.com Email: [email protected] hFE MIN. 100 160 250 40 TYP. - MAX. 250 400 600 - UNIT - ICBO - - 100 nA IEBO - - 100 nA VCEsat - - 0.7 V VBE(on) - - 1.2 V ft 100 - - MHz CCBO - 5 - pF Tel: (852) 8106 7033 Fax: (852) 8106 7099 1 BC817 NPN Silicon Epitaxial Planar Transistors RATINGS AND CHARACTERISTIC CURVES BC817 Note: Specifications are subject to change without notice. Website: www.kingtronics.com Email: [email protected] Tel: (852) 8106 7033 Fax: (852) 8106 7099 2