SMD Type SMD Type MOSFET

MOSFET
SMD
SMD Type
Type
Dual N-Channel MOSFET
SI9926BDY
■ Features
(KI9926BDY)
SOP-8
● RDS(on) = 0.027 Ω @ VGS = 4.5 V
● RDS(on) = 0.036 Ω @ VGS = 2.5 V.
0.21 -0.02
+0.04
1.50 0.15
D1
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
D2
G1
G2
S1
S2
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
10 sec
Steady State
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±10
V
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Maximum Power Dissipation
@TA = 25℃
@TA = 70℃
PD
8.2
6.2
30
2.0
A
1.14
1.3
A
0.72
W
W
Thermal Resistance,Junction-to-Ambient
RθJA
110
℃/W
Jumction temperature and Storage temperature
Tj.Tstg
-55 to +150
℃
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1
MOSFET
SMD Type
Type
SMD
SI9926BDY
(KI9926BDY)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
VDSS
VGS = 0 V, ID = 250 μA
Zero Gate Voltage Drain Current
IDSS
VDS = 20V , VGS = 0V
Gate Threshold Voltage
Gate-Body Leakage
Drain-Source On-State Resistance *
On-State Drain Current *
Min
Typ
Max
20
V
1
VDS = VGS , ID = 250uA
1.5
V
VDS = 0V , VGS = ±8V
±100
nA
VGS = 4.5V , ID = 8.5A
0.020 0.027
VGS = 2.5V , ID = 3.3A
0.029 0.036
RDS(on)
gfs
VDS = 5V , VGS = 4.5V
0.5
30
VDS = 15V , ID =8.2A
29
VDS = 10V , VGS = 4.5V , ID = 8.2A
2.5
11
S
20
Qg
Qgs
Gate-Drain Charge
Qgd
3.2
Turn-On Delay Time
td(on)
36
57
tr
52
78
32
50
15
25
Rise Time
td(off)
Fall Time
tf
Maximum Continuous Drain-Source Diode
Forward Current
IS
VSD
* Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
■ Marking
Marking
9926B
KA****
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VDD = 10V, ID = 1A ,
VGS = 4.5V , RG = 6Ω,RL = 10 Ω
IS = 1.7A, VGS = 0 V
Ω
A
Total Gate Charge
Diode Forward Voltage *
μA
IGSS
Gate-Source Charge
Turn-Off Delay Time
Unit
VGS(th)
ID(on)
Forward Transconductance *
2
Test conditions
Drain-Source Breakdown Voltage
0.8
nC
ns
0.95
A
1.2
V