KEXIN KI4953DY

IC
IC
SMD Type
Dual P-Channel 30-V(D-S) MOSFET
KI4953DY
Features
100% Rg Tested
1: Source 1
3: Source 2
2: Gate 1
4: Gate 2
7,8: Drain 1
5,6: Drain 2
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
20
Continuous Drain Current (TJ = 150
)*
TA = 25
ID
Pulsed Drain Current
Continuous Source Current *
Maximum Power Dissipation *
TA = 25
IDM
-30
IS
-1.7
PD
Maximum Junction-to-Ambient*
2
A
W
1.3
TA = 70
Operating Junction and Storage Temperature Range
V
-4.9
-3.9
TA = 70
Unit
TJ, Tstg
-55 to 150
RthJA
62.5
/W
* Surface Mounted on 1" X 1' FR4 Board.
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1
IC
IC
SMD Type
KI4953DY
Electrical Characteristics Ta = 25
Parameter
Symbol
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current*
ID(on)
Testconditons
Min
20 V
100
-1
-25
VDS = -30V, VGS = 0 V, TJ = 55
Drain-Source On-State Resistance*
nA
A
A
A
VGS = -10 V, ID = -4.9A
0.043
0.053
0.095
VGS = -4.5 V, ID = -3.6A
0.070
Forward Transconductance*
gfs
VDS = -15 V, ID = -4.9A
10
Schottky Diode Forward Voltage*
VSD
IS = -1.7 A, VGS = 0 V
0.8
-1.2
V
16
25
nC
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
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300 s, duty cycle
2%.
S
5
nC
2
nC
2
td(on)
Rise Time
* Pulse test; pulse width
VDS = -15V, VGS = -10 V, ID = -4.9A
Rg
Turn-On Delay Time
2
rDS(on)
-20
- 5 V, VGS = -10 V
Unit
V
VDS = -30V, VGS = 0 V
VDS
Max
-1
VDS = VGS, ID = -250 A
VDS = 0 V, VGS =
Typ
7.1
9
15
ns
VDD = -15 V, RL = 15
13
20
ns
ID = -1 A, VGEN = -10V, RG = 6
25
40
ns
15
25
ns
60
90
ns
IF = -1.7 A, di/dt = 100 A/
s